Mask, method of producing the same, and method of producing semiconductor device

Abstract

To provide a mask able to reduce the thickness of a membrane and maintain the mask strength and a method of producing a semiconductor device able to form a fine pattern with a high accuracy and a method of producing the mask. A mask comprising a thin film, holes formed at the thin film through which a charged particle beam (preferably an electron beam) passes, a support layer formed at one side of the thin film, and apertures formed at a larger size than the holes at least at portions of said holes of said support layer and a method of producing the same and a method of producing a semiconductor device including a lithography step using the same.

1 - 12 . (canceled)  
   
   
       13 . A mask comprising: 
 a membrane, at least one hole extending through said membrane;    a support layer, at least one aperture extending though said support layer, said at least one aperture being self-aligned with said at least one hole, said at least one aperture being larger than said at least one hole;    an assist layer, said support layer being between said membrane and said assist layer, said at least one aperture terminating at said assist layer; and    a frame, said assist layer being between said support layer and said frame, an opening extending through said frame to said support layer, said opening being in alignment with said at least one hole, said opening being larger than said at least one aperture.    
   
   
       14 . A mask as set forth in  claim 13 , wherein said support layer is of a material different from said membrane.  
   
   
       15 . A mask as set forth in  claim 13 , wherein said assist layer is a silicon nitride layer.  
   
   
       16 . A mask as set forth in  claim 13 , wherein said frame is a silicon wafer.  
   
   
       17 . A mask as set forth in  claim 13 , wherein said at least one hole is a single hole and said at least one aperture is a single aperture.  
   
   
       18 . A mask as set forth in  claim 13 , wherein said at least one hole is a plurality of holes and said at least one aperture is a single aperture.  
   
   
       19 . A mask as set forth in  claim 13 , wherein a charged particle beam passes through said at least one hole.  
   
   
       20 . A mask as set forth in  claim 19 , wherein said charged particle beam includes an electron beam.