Photoresist coating composition and method for forming fine contact of semiconductor device

Abstract

A coating composition containing a coating base resin and a C 4 -C 10 alcohol as a main solvent, and a method for forming a fine contact of a semiconductor device including the steps of preparing the coating composition, forming a photoresist film on a semiconductor substrate having an underlying layer, performing exposure with a contact mask and developing processes to form a photoresist pattern for contact on the photoresist film, and coating the coating composition on the photoresist pattern to form a coating film.

1 . A coating composition comprising a coating base resin and a C 4 -C 10  alcohol as a main solvent.  
   
   
       2 . A composition of  claim 1 , wherein the C 4 -C 10  alcohol is present in an amount ranging from about 400 g to 4000 g based on 100 g of the coating base resin.  
   
   
       3 . A composition of  claim 1 , wherein the coating base resin is an acrylic resin.  
   
   
       4 . A composition of  claim 3 , wherein the acrylic resin is poly(t-butylacrylate/methacrylic acid/methacrylate).  
   
   
       5 . A composition of to  claim 1 , wherein the C 4 -C 10  alcohol is a compound selected from the group consisting of cyclopentanol, cycloheptanol, butanol, pentanol, hexanol, octanol, nonanol, decanol, and mixtures thereof.  
   
   
       6 . A composition according to  claim 1 , wherein the composition consists essentially of a coating base resin and a C 4 -C 10  alcohol as a main solvent  
   
   
       7 . A method for forming a fine contact of a semiconductor device, comprising the steps of: 
 (a) providing a coating composition according to  claim 1;     (b) forming a photoresist film on a semiconductor substrate having an underlying layer;    (c) performing exposure with a contact mask and a developing process to form a photoresist pattern for contact on the photoresist film; and    (d) coating the coating composition on the photoresist pattern to form a coating film.    
   
   
       8 . The method of  claim 7 , further comprising the step of performing a resist flow process onto the photoresist pattern after step (b) and before step (c).  
   
   
       9 . The method of  claim 7 , further comprising the step of performing a RELACS (Resolution Enhancement Lithography Assisted by Chemical Shrink) process onto the photoresist pattern after step (b) and before step (c).  
   
   
       10 . The method of  claim 7 , comprising forming the coating film to a thickness in the range of 20 nm to 100 nm.