Semiconductor device including insulated gate type transistor and insulated gate type capacitance, and method of manufacturing the same

Abstract

A semiconductor device includes a semiconductor substrate, an insulated gate type transistor formed in the semiconductor substrate, and an insulated gate type capacitor formed in the semiconductor substrate. The insulated gate type transistor includes a gate insulating film of the transistor selectively formed on the semiconductor substrate, a gate electrode of the transistor formed on the gate insulating film of the transistor, and source-drain regions formed to interpose a body region of the transistor provided under the gate electrode of the transistor in a surface of the semiconductor substrate. The insulated gate type capacitor includes a gate insulating film of the capacitor selectively formed on the semiconductor substrate, a gate electrode of the capacitor formed on the gate insulating film of the capacitor, and extraction electrode regions formed to interpose a body region of the capacitor provided under the gate electrode of the capacitor in the surface of the semiconductor substrate. The extraction electrode regions have a common potential. The insulated gate type transistor has pocket regions of the transistor of a reverse conductivity type to that of the source-drain regions formed from the source-drain regions to a part of the body region of the transistor, the insulated gate type capacitor has no region of a reverse conductivity type to that of the extraction electrode regions in a vicinal region of the extraction electrode regions in the body region side of the capacitor, and the body region of the capacitor and the extraction electrode regions are formed to have different conductivity types from each other.

1 . A semiconductor device comprising: 
 a semiconductor substrate;    an insulated gate type transistor formed in said semiconductor substrate; and    an insulated gate type capacitor formed in said semiconductor substrate;    said insulated gate type transistor including: 
 a gate insulating film of the transistor selectively formed on said semiconductor substrate,  
 a gate electrode of the transistor formed on said gate insulating film of the transistor, and  
 source-drain regions formed to interpose a body region of the transistor provided under said gate electrode of the transistor in a surface of said semiconductor substrate; and  
 said insulated gate type capacitor including:  
 a gate insulating film of the capacitor selectively formed on said semiconductor substrate;  
 a gate electrode of the capacitor formed on said gate insulating film of the capacitor; and  
 extraction electrode regions formed to interpose a body region of the capacitor provided under said gate electrode of the capacitor in said surface of said semiconductor substrate, said extraction electrode regions having a common potential, wherein  
   said insulated gate type transistor has pocket regions of the transistor of a reverse conductivity type to that of said source-drain regions formed from said source-drain regions to a part of said body region of the transistor,    said insulated gate type capacitor has no region of a reverse conductivity type to that of said extraction electrode regions in a vicinal region of said extraction electrode regions in said body region side of the capacitor, and    said body region of the capacitor and said extraction electrode regions are formed to have different conductivity types from each other.    
   
   
       2 . The semiconductor device according to  claim 1 , wherein 
 said source-drain regions include an extension portion of the transistor which has an upper layer portion protruded partially toward said body region side of the transistor, and    said extraction electrode regions include no region which has an upper layer portion protruded toward said body region side of the capacitor.    
   
   
       3 . The semiconductor device according to  claim 1 , wherein 
 said semiconductor substrate includes an SOI substrate comprising a substrate which is insulating at least in its surface and a semiconductor layer provided on the surface of said substrate.    
   
   
       4 . The semiconductor device according to  claim 1 , wherein 
 said gate insulating film of the capacitor has a dielectric constant set to be lower than that of said gate insulating film of the transistor.    
   
   
       5 . A semiconductor device comprising: 
 a semiconductor substrate;    an insulated gate type transistor formed in said semiconductor substrate; and    an insulated gate type capacitor formed in said semiconductor substrate;    said insulated gate type transistor including: 
 a gate insulating film of the transistor selectively formed on said semiconductor substrate,  
 a gate electrode of the transistor formed on said gate insulating film of the transistor, and  
 source-drain regions formed to interpose a body region of the transistor provided under said gate electrode of the transistor in a surface of said semiconductor substrate; and  
   said insulated gate type capacitor including: 
 a gate insulating film of the capacitor selectively formed on said semiconductor substrate;  
 a gate electrode of the capacitor formed on said gate insulating film of the capacitor; and  
 extraction electrode regions formed to interpose a body region of the capacitor provided under said gate electrode of the capacitor in said surface of said semiconductor substrate, said extraction electrode regions having a common potential, wherein  
   said insulated gate type transistor has pocket regions of the transistor of a reverse conductivity type to that of said source-drain regions formed from said source-drain regions to a part of said body region of the transistor,    said insulated gate type capacitor has no region of a reverse conductivity type to that of said extraction electrode regions in a vicinal region of said extraction electrode regions in said body region side of the capacitor,    said source-drain regions include an extension portion of the transistor which has an upper layer portion protruded partially toward said body region side of the transistor,    said extraction electrode regions include an extension portion of the capacitor which has an upper layer portion protruded partially toward said body region side of the capacitor, and    said extension portion of the capacitor having a greater depth than that of said extension portion of the transistor.    
   
   
       6 . A semiconductor device comprising: 
 a semiconductor substrate;    an insulated gate type transistor formed in said semiconductor substrate; and    an insulated gate type capacitor formed in said semiconductor substrate;    said insulated gate type transistor including: 
 a gate insulating film of the transistor selectively formed on said semiconductor substrate,  
 a gate electrode of the transistor formed on said gate insulating film of the transistor, and  
 source-drain regions formed to interpose a body region of the transistor provided under said gate electrode of the transistor in a surface of said semiconductor substrate; and  
   said insulated gate type capacitor including: 
 a gate insulating film of the capacitor selectively formed on said semiconductor substrate;  
 a gate electrode of the capacitor formed on said gate insulating film of the capacitor; and  
 extraction electrode regions formed to interpose a body region of the capacitor provided under said gate electrode of the capacitor in said surface of said semiconductor substrate, said extraction electrode regions having a common potential, wherein  
   said insulated gate type transistor has pocket regions of the transistor of a reverse conductivity type to that of said source-drain regions formed from said source-drain regions to a part of said body region of the transistor,    said insulated gate type capacitor has no region of a reverse conductivity type to that of said extraction electrode regions in a vicinal region of said extraction electrode regions in said body region side of the capacitor, and    said gate insulating film of the capacitor has a thickness set to be greater than that of said gate insulating film of the transistor.