Semiconductor device

Abstract

A semiconductor device comprises a substrate, a first conductive film, a first insulation film, a second insulation film, a second conductive film, and a third conductive film. The first conductive film is formed on the substrate. The first insulation film is formed on the first conductive film and has a first opening. The first opening is formed as having multiple crossing trenches each having a predetermined width. The second insulation film is formed on the sides and bottom of the first opening. The second conductive film is formed on the second insulation film in the interior of the first opening. The third conductive film is formed on the second insulation film and the second conductive film.

1 . A semiconductor device comprising: 
 a substrate;    a first conductive film formed on the substrate;    a first insulation film formed on the first conductive film and having a first opening, the first opening being formed to have multiple crossing trenches each having a predetermined width;    a second insulation film formed on the sides and bottom of the first opening;    a second conductive film formed on the second insulation film in the interior of the first opening; and    a third conductive film formed on the second insulation film and the second conductive film.    
   
   
       2 . The semiconductor device according to  claim 1 , wherein 
 each of the trenches has a linear shape, and    the first opening comprises a plurality trenches arranged in a lattice structure.    
   
   
       3 . A semiconductor device comprising: 
 a substrate;    a first conductive film formed on the substrate and having a first opening therein, the first opening having a predetermined width;    a first insulation film formed on the first conductive film and having a second opening over the first opening, the second opening having a predetermined width;    a second insulation film formed on the sides of the first and second openings;    a second conductive film formed on the second insulation film inside the first and second openings; and    a third conductive film formed on the second insulation film and the second conductive film.    
   
   
       4 . The semiconductor device according to  claim 3 , wherein 
 the second opening is a cylindrical pit.    
   
   
       5 . The semiconductor device according to  claim 3 , wherein 
 the second opening is a trench having a predetermined width.    
   
   
       6 . The semiconductor device according to  claim 3 , wherein 
 the second opening is formed to have multiple crossing trenches each having a predetermined width.    
   
   
       7 . The semiconductor device according to  claim 3 , wherein 
 the first opening is not in contact with the substrate.    
   
   
       8 . The semiconductor device according to  claim 3 , wherein 
 the depth of the first opening is deeper than the thickness of the second insulation film.    
   
   
       9 . The semiconductor device according to  claim 1 , wherein 
 the first conductive film is a multiple-layer film having one or more titanium nitride layers, one or more titanium layers and, one or more aluminum silicon layers.    
   
   
       10 . The semiconductor device according to  claim 3 , wherein 
 the first conductive film is a multiple-layer film having one ore more titanium nitride layers, one or more titanium layers, and one or more aluminum silicon layers.    
   
   
       11 . The semiconductor device according to  claim 3 , wherein 
 the first conductive film has a titanium nitride layer on the lowest layer and a titanium layer formed on the titanium nitride layer; and    the bottom of the first opening lies between the upper surface and the lower surface of the titanium layer.    
   
   
       12 . The semiconductor device according to  claim 1 , wherein 
 the first insulation film has a contact hole formed therein, the contact hole being formed in the first insulation film so as to not be over the first conductive film, and    the predetermined width is wider than the diameter of the contact hole by more than double the thickness of the second insulation film.    
   
   
       13 . The semiconductor device according to  claim 3 , wherein 
 the first insulation film has a contact hole formed therein, the contact hole being formed in the first insulation film so as to not be over the first conductive film, and    the predetermined width is wider than the diameter of the contact hole by more than double the thickness of the second insulation film.    
   
   
       14 . The semiconductor device according to  claim 1 , wherein 
 a main component of the second conductive film is tungsten.    
   
   
       15 . The semiconductor device according to  claim 3 , wherein 
 a main component of the second conductive film is tungsten.