Variable temperature deposition methods

Abstract

A deposition method may include, at a first temperature, contacting a substrate with a first precursor and chemisorbing a first layer at least one monolayer thick over the substrate. At a second temperature different from the first temperature, the first layer may be contacted with a second precursor, chemisorbing a second layer at least one monolayer thick on the first layer. Temperature may be altered by adding or removing heat with a thermoelectric heat pump. The altering the substrate temperature may occur from the first to the second temperature. The second layer may be reacted with the first layer by heating to a third temperature higher than the second temperature. A deposition method may also include atomic layer depositing a first specie of a substrate approximately at an optimum temperature for the first specie deposition. A second specie may be atomic layer deposited on the first specie approximately at an optimum temperature for the second specie deposition different from the first specie optimum temperature.

1 - 53 . (canceled)  
   
   
       54 . A deposition method comprising: 
 chemisorbing a first monolayer of a first compound over a substrate while maintaining the substrate at a first temperature with a heater;    adding or removing heat with a device using a thermoelectric effect and establishing the substrate at a second temperature at least about 50° C. different from the first temperature, the device being different from the heater;    after purging any first compound not chemisorbed, chemisorbing a monolayer of a second compound on and in contact with the first monolayer of the first compound at the second substrate temperature;    adding heat with the device using a thermoelectric effect to establish the substrate at a third temperature at least about 50° C. higher than the second temperature and, at the third temperature, reacting the chemisorbed second compound with the chemisorbed first compound, the third temperature being more conducive to reaction of the chemisorbed second compound with the chemisorbed first compound compared to the second temperature; and    adding or removing heat with the device using a thermoelectric effect to establish the substrate at approximately the first temperature.    
   
   
       55 . The method of  claim 54  wherein the first temperature is an optimum temperature for the first compound chemisorption.  
   
   
       56 . The method of  claim 54  wherein the second temperature is an optimum temperature for the second compound chemisorption.  
   
   
       57 . The method of  claim 54  wherein the third temperature is an optimum temperature for the reaction of the chemisorbed first and second compounds.  
   
   
       58 . The method of  claim 54  wherein the third temperature is established after completing the chemisorbing the monolayer of the second compound.  
   
   
       59 . The method of  claim 54  wherein the first compound and/or the second compound is formed from a plurality of different precursor species.  
   
   
       60 . The method of  claim 54  further comprising chemisorbing a second monolayer of the first compound on the reacted layer of first and second compounds while maintaining the substrate at the first temperature with the heater.  
   
   
       61 . A deposition method comprising: 
 chemisorbing a first monolayer of a first compound over a substrate while maintaining the substrate at a first temperature with a heater;    removing heat with a device using a thermoelectric effect and establishing the substrate at a second temperature at least about 1° C. lower than the first temperature, the device being different from the heater;    chemisorbing a monolayer of a second compound on and in contact with the first monolayer of the first compound at the second substrate temperature;    adding heat with the device using a thermoelectric effect to establish the substrate at a third temperature at least about 1° C. higher than the first temperature and, at the third temperature, reacting the chemisorbed second compound with the chemisorbed first compound, the third temperature being more conducive to reaction of the chemisorbed second compound with the chemisorbed first compound compared to the first and second temperatures; and    removing heat with the device using a thermoelectric effect to establish the substrate at approximately the first temperature.    
   
   
       62 . The method of  claim 61  wherein the first temperature is an optimum temperature for the first compound chemisorption.  
   
   
       63 . The method of  claim 61  wherein the second temperature is an optimum temperature for the second compound chemisorption.  
   
   
       64 . The method of  claim 61  wherein the third temperature is an optimum temperature for the reaction of the chemisorbed first and second compounds.  
   
   
       65 . The method of  claim 61  wherein the second temperature is at least about 10° C. lower than the first temperature and the third temperature is at least about 10° C. higher than the first temperature.  
   
   
       66 . The method of  claim 61  wherein the second temperature is at least about 50° C. lower than the first temperature and the third temperature is at least about 50° C. higher than the first temperature.  
   
   
       67 . The method of  claim 61  wherein the third temperature is established after completing the chemisorbing the monolayer of the second compound.  
   
   
       68 . The method of  claim 61  wherein the first compound and/or the second compound is formed from a plurality of different precursor species.  
   
   
       69 . The method of  claim 61  further comprising chemisorbing a second monolayer of the first compound on the reacted layer of first and second compounds while maintaining the substrate at the first temperature with the heater.  
   
   
       70 . The method of  claim 61  further comprising purging any first compound not chemisorbed before chemisorbing the second compound.  
   
   
       71 . A deposition method comprising: 
 chemisorbing a first monolayer of a first compound over a substrate while maintaining the substrate at a first temperature with a heater, the first temperature being approximately an optimum temperature for the first compound chemisorption;    removing heat with a device using a thermoelectric effect and establishing the substrate at a second temperature at least about 10° C. lower than the first temperature, the device being different from the heater;    after purging any first compound not chemisorbed, chemisorbing a monolayer of a second compound on and in contact with the first monolayer of the first compound at the second substrate temperature, the second temperature being approximately an optimum temperature for the second compound chemisorption;    adding heat with the device using a thermoelectric effect to establish the substrate at a third temperature at least about 10° C. higher than the first temperature and, at the third temperature, reacting the chemisorbed second compound with the chemisorbed first compound, the third temperature being approximately an optimum temperature for the reaction of the chemisorbed first and second compounds;    removing heat with the device using a thermoelectric effect to establish the substrate at approximately the first temperature; and    chemisorbing a second monolayer of the first compound on the reacted layer of first and second compounds while maintaining the substrate at the first temperature with the heater.    
   
   
       72 . The method of  claim 71  wherein the second temperature is at least about 50° C. lower than the first temperature and the third temperature is at least about 50° C. higher than the first temperature.  
   
   
       73 . The method of  claim 71  wherein the first compound and/or the second compound is formed from a plurality of different precursor species.