Infrared thermopile detector system for semiconductor process monitoring and control

Abstract

A thermopile-based detector for monitoring and/or controlling semiconductor processes, and a method of monitoring and/or controlling semiconductor processes using thermopile-based sensing of conditions in and/or affecting such processes.

1 . A detector system for semiconductor process monitoring comprising: 
 (a) a sampling region for a material;    (b) an infrared radiation source constructed and arranged to transmit infrared radiation through the sampling region; and    (c) a thermopile detector constructed and arranged to receive infrared radiation after the transmission thereof through the sampling region and to responsively generate an output signal correlative of material within said sampling region,    wherein said detector system is adapted to receive said material into said sampling region from a semiconductor processing system to monitor and/or control said semiconductor process.    
   
   
       2 . The detector system of  claim 1 , wherein the material comprises a solid.  
   
   
       3 . The detector system of  claim 1 , wherein the material comprises a fluid.  
   
   
       4 . The detector system of  claim 1 , wherein the material comprises a liquid.  
   
   
       5 . The detector system of  claim 1 , wherein the material comprises a gas.  
   
   
       6 . The detector system of  claim 1 , wherein said thermopile detector is arranged to detect concentration of the material within the sampling region.  
   
   
       7 . The detector system of  claim 1 , wherein the sampling region is in a feed line delivering material from said semiconductor processing system.  
   
   
       8 . The detector system of  claim 1 , wherein the sampling region is in a feed line delivering material to said semiconductor processing system.  
   
   
       9 . The detector system of  claim 1 , further comprising infrared radiation filter(s) configured to allow specific IR wavelength radiation to pass through the filter(s).  
   
   
       10 . The detector system of  claim 1 , further comprising mirror(s) and/or lense(s) to collimate and/or direct the infrared radiation to enhance detection by the thermopile detector.  
   
   
       11 . The detector system of  claim 1 , further comprising a process controller arranged to receive the output of the thermopile detector and to responsively control one or more process conditions in and/or affecting the semiconductor process.  
   
   
       12 . The detector system of  claim 1 , wherein said detector comprises a multiple array of elements.  
   
   
       13 . The detector of  claim 1 , wherein said detector system is adapted to receive said material into said sampling region from a semiconductor processing system to monitor said semiconductor process.  
   
   
       14 . The detector of  claim 1 , wherein said detector system is adapted to receive said material into said sampling region from a semiconductor processing system to control said semiconductor process.  
   
   
       15 . A semiconductor processing system comprising the detector system of  claim 1  and a semiconductor processing apparatus.  
   
   
       16 . The semiconductor processing system of  claim 15 , wherein said apparatus is selected from the group consisting of epitaxial growth reactor, an ion implantation unit, chemical vapor deposition chamber, or combinations thereof.  
   
   
       17 . The semiconductor processing system of  claim 15 , further comprising a process controller arranged to receive the output of the thermopile detector and to responsively control one or more process conditions in and/or affecting the semiconductor processing system.  
   
   
       18 . A method of operating a semiconductor process including processing of or with a material, said method comprising monitoring and/or controlling said process using the detector system of  claim 1 .  
   
   
       19 . The method of  claim 18 , comprising detecting the concentration of a desired component of said material.  
   
   
       20 . The method of  claim 19 , further comprising generating an output from said detector system indicative of the concentration of said component of said material.  
   
   
       21 . The method of  claim 20 , further comprising controlling one or more conditions in and/or affecting the semiconductor process, in response to said output.  
   
   
       22 . The method of  claim 21 , wherein the one or more conditions in and/or affecting the process include flow rate of a material to a semiconductor process tool.  
   
   
       23 . The method of  claim 18 , wherein the material delivered to a semiconductor process tool is monitored.  
   
   
       24 . A method of operating a semiconductor process including processing of or with a material, said method comprising monitoring and/or controlling said process using the semiconductor processing system of  claim 15 .  
   
   
       25 . The method of  claim 24 , comprising sensing concentration of a desired component of said material.  
   
   
       26 . The method of  claim 25 , further comprising generating an output from said detector system indicative of concentration of said selected component of said material.  
   
   
       27 . The method of  claim 26 , further comprising controlling one or more conditions in and/or affecting the semiconductor process, in response to said output.  
   
   
       28 . A process for manufacturing a semiconductor product comprising using the detector system of  claim 1  to monitor and/or control said process for manufacturing said semiconductor product.  
   
   
       29 . A process for manufacturing a semiconductor product comprising using the semiconductor processing system of  claim 15  to monitor and/or control said process for manufacturing said semiconductor product.  
   
   
       30 . A semiconductor process system adapted for processing of or with a material therein, said system comprising: 
 (a) a sampling region for the material;    (b) an infrared radiation source constructed and arranged to transmit an infrared radiation beam through the sampling region;    (c) a thermopile detector constructed and arranged to receive infrared radiation after the transmission of the infrared beam through the sampling region and to responsively generate an output signal correlative of a concentration of or sensing of said material; and    (d) a process controller arranged to receive the output of the thermopile detector and to responsively control one or more process conditions in and/or affecting the semiconductor process system.    
   
   
       31 . The semiconductor process system of  claim 30 , wherein said output signal is correlative of said concentration of said material.  
   
   
       32 . The detector system of  claim 1  further comprising a process controller arranged to receive the output signal of the thermopile detector and to responsively control one or more process conditions in and/or affecting the semiconductor process system.