US2006261488A1PendingUtilityA1

Wafer level electro-optical simiconductor manufacture fabrication mechanism and a method for the same

Assignee: HARVATEK CORPPriority: Jan 26, 2005Filed: Jul 26, 2006Published: Nov 23, 2006
Est. expiryJan 26, 2025(expired)· nominal 20-yr term from priority
H10W 74/00H10W 90/756H10W 46/201H10W 90/00H10W 90/724H10W 90/722H10W 46/00H10W 42/60H10D 89/60
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Claims

Abstract

A wafer-level electro-optical semiconductor fabrication mechanism and method for the same which improves upon traditional electro-optical semiconductor grain packaging methods. The present invention electrically connects semiconductor grains to the grains on a top surface of a wafer. this is done by either screen-printing or steel board-printing solder or silver paste onto the wafer. After that, the wafer is processed using the following steps: processing the devices, bonding with wire, packaging the wafer and finally cutting the wafer. Using this method raises the production yield while production times and costs are reduced. The wafer-level electro-optical semiconductor fabrication mechanism comprises: a wafer, an electro-optical semiconductor grain and conductive materials.

Claims

exact text as granted — not AI-modified
1 - 10 . (canceled)  
   
   
       11 . A wafer-level electro-optical semiconductor manufacture method, further comprising: 
 preparing a wafer with a preservation position for covering the jointed crystal grains;    daubing a plurality of conducting materials onto the preservation position;    stacking electro-optical semiconductor onto the conductive materials of the wafer;    packaging the electro-optical semiconductor with high polymeric materials to produce a semi-finished product;    cutting the semi-finished product to form an electro-optical semiconductor mechanism.    
   
   
       12 . The wafer-level electro-optical semiconductor manufacturing method as in  claim 11 , wherein the wafer has over-voltage protection, voltage regulation, current regulation, noise filtering and electrical static discharge circuits all electrically connected to the preservation position.

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