Semiconductor device and manufacturing method of the same

Abstract

It is an object of the present invention is to provide a technique for forming a dense insulating film of good quality that is applicable to a transistor made on a substrate weak against heat such as a glass and a semiconductor device that can realize high performance and high reliability using the technique. In the present invention a silicon oxide film is formed on a crystalline semiconductor film, which is formed on an insulating surface, by the sputtering method using silicon as a target by applying high-frequency power in an atmosphere containing oxygen or oxygen and a rare gas, a silicon nitride film is formed thereon by applying high-frequency power in an atmosphere containing nitrogen or nitrogen and a rare gas, and then, heat treatment of a stacked body of the crystalline semiconductor film, the silicon oxide film, and the silicon nitride film at a temperature higher than a temperature for forming the films is performed.

1 . A semiconductor device comprising: 
 a crystalline semiconductor film over a substrate;    a gate electrode adjacent to the crystalline semiconductor film; and    an insulating stacked body between the crystalline semiconductor film and the gate electrode, the insulating stacked body comprising a silicon oxide film and a silicon nitride film,    wherein the insulating stacked body has a fluctuation value of a flat-band voltage of 0.5 V or less in a bias thermal stress test for applying an electric field intensity of 1.7 MV/cm for one hour at a heating temperature of 150° C.    
     
     
         2 . A semiconductor device comprising: 
 a crystalline semiconductor film over a substrate;    a gate electrode adjacent to the crystalline semiconductor film; and    an insulating stacked body between the crystalline semiconductor film and a gate electrode, the insulating stacked body comprising of a silicon oxide film and a silicon nitride film,    wherein the insulating stacked body has a fluctuation value of a flat-band voltage of 0.5 V or less in a bias thermal stress test for applying an electric field intensity of 1.7 MV/cm for one hour at a heating temperature of 150° C.,    wherein the silicon oxide film is to be etched by a mixed water solution containing 7.13% of ammonium hydrogen fluoride and 15.4% of ammonium fluoride at 100 nm/min or less, and    wherein the silicon nitride film is to be etched by the mixed water solution at 10 nm/min or less.    
     
     
         3 . A semiconductor device comprising: 
 a semiconductor film over a substrate;    a gate electrode adjacent to the crystalline semiconductor film; and    an insulating stacked body between the semiconductor film and a gate electrode, the insulating stacked body comprising a silicon oxide film and a silicon nitride film,    wherein the insulating stacked body has a fluctuation value of a flat-band voltage of 0.5 V or less in a bias thermal stress test for applying an electric field intensity of 1.7 MV/cm for one hour at a heating temperature of 150° C.    
     
     
         4 . A semiconductor device comprising: 
 a semiconductor film over a substrate;    a gate electrode adjacent to the crystalline semiconductor film; and    an insulating stacked body between the crystalline semiconductor film and a gate electrode, the insulating stacked body comprising of a silicon oxide film and a silicon nitride film,    wherein the insulating stacked body has a fluctuation value of a flat-band voltage of 0.5 V or less in a bias thermal stress test for applying an electric field intensity of 1.7 MV/cm for one hour at a heating temperature of 150° C.,    wherein the silicon oxide film is to be etched by a mixed water solution containing 7.13% of ammonium hydrogen fluoride and 15.4% of ammonium fluoride at 100 nm/min or less, and    wherein the silicon nitride film is to be etched by the mixed water solution at 10 nm/min or less.    
     
     
         5 . A semiconductor device according to  claim 1 , 
 wherein the substrate comprises the material selected from a group consisting of barium borosilicate glass, alumino borosilicate glass, alumino silicate glass.    
     
     
         6 . A semiconductor device according to  claim 2 , 
 wherein the substrate comprises the material selected from a group consisting of barium borosilicate glass, alumino borosilicate glass, alumino silicate glass.    
     
     
         7 . A semiconductor device according to  claim 3 , 
 wherein the substrate comprises the material selected from a group consisting of barium borosilicate glass, alumino borosilicate glass, alumino silicate glass.    
     
     
         8 . A semiconductor device according to  claim 4 , 
 wherein the substrate comprises the material selected from a group consisting of barium borosilicate glass, alumino borosilicate glass, alumino silicate glass.    
     
     
         9 . A semiconductor device according to  claim 1 , 
 wherein the gate electrode is located over the crystalline semiconductor layer.    
     
     
         10 . A semiconductor device according to  claim 2 , 
 wherein the gate electrode is located over the crystalline semiconductor layer.    
     
     
         11 . A semiconductor device according to  claim 3 , 
 wherein the gate electrode is located over the semiconductor layer.    
     
     
         12 . A semiconductor device according to  claim 4 , 
 wherein the gate electrode is located over the semiconductor layer.    
     
     
         13 . A device selected from the group consisting of a microcomputer, a media processor, graphics LSI, an encryption LSI, a memory, and an LSI for cellular phone comprising the semiconductor device according to  claim 1 .  
     
     
         14 . A device selected from the group consisting of a microcomputer, a media processor, graphics LSI, an encryption LSI, a memory, and an LSI for cellular phone comprising the semiconductor device according to  claim 2 .  
     
     
         15 . A device selected from the group consisting of a microcomputer, a media processor, graphics LSI, an encryption LSI, a memory, and an LSI for cellular phone comprising the semiconductor device according to  claim 3 .  
     
     
         16 . A device selected from the group consisting of a microcomputer, a media processor, graphics LSI, an encryption LSI, a memory, and an LSI for cellular phone comprising the semiconductor device according to  claim 4.