Substrate processing method and substrate processing apparatus

Abstract

In a substrate processing apparatus, a control electrode ( 131 ) separates a process space ( 11 C) including a substrate to be processed and a plasma formation space ( 11 B) not including the substrate. The control electrode includes a conductive member formed in a processing vessel and having a plurality of apertures ( 131 a ) for passing plasma. A surface of the control electrode is covered by an aluminum oxide or a conductive nitride. In the substrate processing apparatus, a gas containing He and N 2 is supplied into the processing vessel. In the plasma formation space, there is formed plasma under a condition in which atomic state nitrogen N* are excited. The atomic state nitrogen N* are used to nitride a surface of the substrate.

1 - 9 . (canceled)  
   
   
       10 . A substrate processing apparatus, comprising: 
 a processing vessel defined by an outer wall and having a stage for holding a substrate to be processed thereon;    an evacuation system coupled to said processing vessel;    a plasma gas supplying part supplying a plasma excitation gas and a process gas into said processing vessel;    a microwave window provided on said processing vessel so as to face said substrate to be processed; and    a control electrode provided between said substrate to be processed on said stage and said plasma gas supplying part so as to face said substrate to be processed, and separating a plasma excitation space containing said microwave window and a process space containing said substrate to be processed,    said control electrode comprising a conductive member having a plurality of apertures for passing plasma formed in said processing vessel therethrough, and    a surface of said control electrode being covered by any of aluminum oxide or electrically conductive nitride.    
   
   
       11 . The substrate processing apparatus as claimed in  claim 10 , characterized in that said control electrode has a lattice-shaped form and is grounded.  
   
   
       12 . The substrate processing apparatus as claimed in  claim 10 , characterized in that said control electro has a form of a lattice-like shape and said substrate processing apparatus comprises a negative voltage source connected to said control electrode.  
   
   
       13 . The substrate processing apparatus as claimed in  claim 10 , characterized in that an inner wall of said processing vessel is covered with an insulation film in said plasma excitation space.  
   
   
       14 . The substrate processing apparatus as claimed in  claim 10 , characterized by further comprising a microwave antenna coupled to said microwave window at an outer side of said processing vessel.  
   
   
       15 . A substrate processing apparatus, characterized by: 
 a processing vessel defined by a wall of quartz glass and having a stage for holding a substrate to be processed;    an evacuation system coupled to said processing vessel;    a plasma gas supplying part supplying a plasma excitation gas and a process gas to said processing vessel;    a control electrode provided so as to face said substrate to be processed on said stage and dividing an interior of said processing vessel into a process space containing said substrate to be processed and a plasma excitation space; and    an induction coil provided outside said quartz glass wall in correspondence to said plasma excitation space,    said control electrode comprising a conductive member having a plurality of apertures passing therethrough formed in said processing vessel, and    a surface of said control electrode being covered with any of aluminum oxide or electrically conductive nitride.    
   
   
       16 . The substrate processing apparatus as claimed in  claim 15 , characterized in that said quartz glass wall defines a dome-like space.  
   
   
       17 . The substrate processing apparatus as claimed in  claim 15 , characterized in that said control electrode is grounded.  
   
   
       18 . The substrate processing apparatus as claimed in  claim 15 , characterized in that said control gate is connected to a negative voltage source.