Semiconductor device and method of fabricating the same

Abstract

A semiconductor device includes a semiconductor substrate and an array of protruding electrodes arranged at a pitch X1. Each of the protruding electrodes has a height X3 and is formed on a barrier metal base of diameter X2 coupled to an electrode arranged on the semiconductor substrate so as to satisfy the relations (X½)≦X2≦(3*X¼) and (X½)≦X3≦(3*X¼).

1 - 2 . (canceled)  
   
   
       3 . A method for fabricating a semiconductor device comprising the steps of: 
 forming a seed layer on a semiconductor substrate;    forming a resist mask having an opening at a position corresponding to an electrode located on the semiconductor substrate, the seed layer being exposed in the opening;    forming a barrier metal base to include the seed layer exposed in the opening;    forming a protruding electrode on the barrier metal base by plating; and    after the resist mask forming step, performing a pre-treatment process in which at least one of an ashing process, an acid immersion process, and a water rinsing process is carried out.    
   
   
       4 . The method of  claim 3 , further comprising the step of: 
 removing the resist mask; and    etching a part of the barrier metal base so as to shape the barrier metal base.    
   
   
       5 . The method of  claim 3 , further comprising the step of: 
 shaping the protruding electrode by fluxless reflow using carboxylic acid.