US2006255469A1PendingUtilityA1

Semiconductor device and method of fabricating the same

Assignee: RENESAS TECH CORPPriority: Mar 27, 1997Filed: Jul 5, 2006Published: Nov 16, 2006
Est. expiryMar 27, 2017(expired)· nominal 20-yr term from priority
Inventors:Takahisa Eimori
H10W 20/093H10W 20/089H10W 20/082H10W 20/075H10W 20/074H10W 20/069H10W 20/40H10P 50/00H10B 12/05
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Claims

Abstract

A lower portion of an interlayer insulating film is formed contiguous with a semiconductor wafer. The lower portion has a high impurity concentration and a high etching rate. An upper portion of an interlayer insulating film is formed over the lower portion apart from the semiconductor wafer. The upper portion has a low impurity concentration and a low etching rate. A plurality of contact holes are formed through the interlayer insulating film by anisotropic etching. The bottom portion of each contact hole is expanded by isotropic etching, and a contact is formed in the contact hole. Thus, a satisfactory contact is formed in a hole of a large aspect ratio.

Claims

exact text as granted — not AI-modified
1 - 8 . (canceled)  
   
   
       9 . A semiconductor device comprising: 
 a semiconductor base layer;    a plurality of conductive elements formed on said semiconductor base layer,    a silicon nitride etching resistant film directly covering at least side surfaces of said conductive elements, respectively;    an interlayer insulating film, of material different from the etching resistant film material, formed on said etching resistant film so as to cover said etching resistant film, the interlayer insulating film comprising a lower interlayer and an upper interlayer, the lower interlayer having a higher etching rate than that of the upper interlayer; and    a contact hole formed through the interlayer insulating film and extending between adjacent conductive elements to the semiconductor base layer, the hole being longer through the upper interlayer than the lower interlayer; wherein    the lower interlayer insulating film is in direct contact with the etching resistant film, and the upper interlayer insulating film is in direct contact with the lower interlayer insulating film, and    the diameter of said contact hole is larger between said adjacent conductive elements than the diameter of said contact hole between the upper and lower interlayer insulating films.    
   
   
       10 - 20 . (canceled)

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