Substitutionally alloyed intermetallic compounds

Abstract

A micro-electromechancial system has a moveable element supported by a flexure, the flexure being formed of a substitutionally alloyed intermetallic compound. The substitutionally alloyed intermetallic compound includes a base intermetallic compound having a major component and a minor component; and at least one of a first substituent and a second substituent. The first and second substituents are substituted coherently for the major and minor components of the base intermetallic compound, respectively, in amounts sufficient to reduce creep in the resulting substitutionally alloyed intermetallic compound without substantially modifying the crystalline structure of the base intermetallic compound.

1 . A micro-electromechancial system comprising: 
 a moveable element supported by a flexure, the flexure being formed of a substitutionally alloyed intermetallic compound comprising: 
 a base intermetallic compound having a major component and a minor component; and,  
 at least one of a first substituent and a second substituent, the first and second substituents being substituted coherently for the major and minor components of the base intermetallic compound, respectively, in amounts sufficient to reduce creep in the resulting substitutionally alloyed intermetallic compound without substantially modifying the crystalline structure of the base intermetallic compound.  
   
   
   
       2 . The micro-electromechancial system of  claim 1  wherein the base intermetallic compound substantially comprises a crystalline structure chosen from a group consisting of A15, B2, C14, C15, L10, and L1 2 .  
   
   
       3 . The micro-electromechancial system of  claim 2  wherein the base intermetallic compound substantially comprises an Al  5  crystalline structure and is chosen from a group consisting of Ti 3 Ir, Mo 3 Ir, Nb 3 OS, Cr 3 Ge, AlMo 3 , Cr 3 Os, Cr 3 Pt, V 3 Si, Nb 3 Al, Nb 31 r, Ti 3 Pt, Nb 3 Pt, Nb 3 Au, Cr 3 Ir, V 3 Ga, Nb 3 In, V 3 Ir, V 3 Pt, and V 3 Rh.  
   
   
       4 . The micro-electromechancial system of  claim 3  wherein the first substituent is selected from a group consisting of Cr, Mo, Nb, Os, Re, Ta, Ti, V and Zr.  
   
   
       5 . The micro-electromechancial system of  claim 3  wherein the second substituent is selected from a group consisting of Al, As, Au, Co, Ga, Ge, Hg, In, Ir, Ni, Os, Pd, Pt, Rh, Ru, Sb, Si, Sn and V.  
   
   
       6 . The micro-electromechancial system of  claim 2  wherein the base intermetallic compound substantially comprises an B2 crystalline structure and is chosen from a group consisting of BeCo, BeCu, AlIr, DyIn, TiCo, MgPd, NiGa, OsHf, HfRh, HoIn, CuPd, AuCd, TiOs, InPd, MgSc, PdZn, OsV, HgLi, AgLi, AlCo, AgMg, RuV, FeAl, CoGa, FeRh and CoFe.  
   
   
       7 . The micro-electromechancial system of  claim 6  wherein the first substituent is selected from a group consisting of Ag, Al, Au, Ba, Be, Bi, Ca, Cd, Ce, Co, Cs, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Hg, Ho, In, Ir, La, Li, Lu, Mg, Mn, Nb, Nd, Ni, Os, Pb, Pd, Pr, Pt, Rb, Rh, Ru, Sc, Si, Sm, Sr, Ta, Th, Te, Th, Ti, Tm, V, Y, Yb, Zn and Zr.  
   
   
       8 . The micro-electromechancial system of  claim 2  wherein the base intermetallic compound substantially comprises an C14 crystalline structure and is chosen from a group consisting of HfRe 2 , Fe 2 Ti, YbMg 2 , Be 2 W, Fe 2 Ta, Os 2 Hf, TiMn 2 , Fe 2 Nb, NbMn 2 , Mn 2 Hf, BeFe 2  and ZrMn 2 .  
   
   
       9 . The micro-electromechancial system of  claim 8  wherein the first substituent is selected from a group consisting of Al, Be, Co, Cr, Fe, Li, Mg, Mn, Os, Re, Rh, Ru and Zn.  
   
   
       10 . The micro-electromechancial system of  claim 8  wherein the second substituent is selected from a group consisting of Am, Ba, Be, Ca, Cr, Dy, Er, Eu, Fe, Gd, Hf, Ho, La, Lu, Mg, Mo, Nb, Nd, Np, Os, Pr, Ru, Sc, Sm, Ta, Th, Th, Ti, Tm, V, W, Y, Yb and Zr.  
   
   
       11 . The micro-electromechancial system of  claim 2  wherein the base intermetallic compound substantially comprises an C15 crystalline structure and is chosen from a group consisting of Au 2 Na, CeIr 2 , CePt 2 , Co 2 Hf, Co 2 Ta, Co 2 Zr, Cu 2 Be, LaPt 2 , LiPt 2 , NdPt 2 , PrPt 2 , Pt 2 Eu, Pt 2 Gd, Rh 2 Er, ScNi 2 , SmPt 2 , ThIr 2  and ZrMo 2 .  
   
   
       12 . The micro-electromechancial system of  claim 11  wherein the first substituent is selected from a group consisting of Ag, Al, Au, Be, Bi, Co, Cr, Cu, Fe, Ir, Mg, Mn, Mo, Ni, Os, Pd, Pt, Rh, Ru, V, W and Zn.  
   
   
       13 . The micro-electromechancial system of  claim 11  wherein the second substituent is selected from a group consisting of Ag, Am, Ba, Be, Bi, Ca, Ce, Cs, Ir, Er, Eu, Fe, Gd, Hf, Ho, K, La, Li, Lu, Mg, Na, Nb, Nd, Np, Pb, Pm, Pr, Rb, Sc, Sm, Sr, Ta, Th, Th, Ti, Tm, Y, Yb and Zr.  
   
   
       14 . The micro-electromechancial system of  claim 2  wherein the base intermetallic compound substantially comprises an L1 0  crystalline structure and is chosen from a group consisting of CoPt, HgPb, VRh, IrV, AuCu, PtZn, FePt and CdPd.  
   
   
       15 . The micro-electromechancial system of  claim 14  wherein the first substituent is selected from a group consisting of Al, Au, Bi, Ca, Cd, Co, Cr, Cu, Eu, Fe, Ga, Hf, Hg, In, Ir, Mg, Mn, Na, Nb, Ni, Pb, Pd, Pt, Rh, Ru, Sn, Ta, Ti, V, Yb, Zn and Zr.  
   
   
       16 . The micro-electromechancial system of  claim 2  wherein the base intermetallic compound substantially comprises an L1 2  crystalline structure and is chosen from a group consisting of CoPt 3 , FePd 3 , GeNi 3 , CrIr 3 , GaFe 3 , TaIr 3 , ZrIr 3 , PbPd 3 , YPd 3 , ErPd 3 , TiRh 3 , TiPt 3 , ZnPt 3 , GaNi 3 , NbRh 3 , GaPt 3 , TiPd 3 , TaRh 3 , CrPt 3 , HIh 3 , VRh 3 , AuCu 3 , MnNi 3 , PdCu 3 , NbIr 3 , VIr 3 , Co 3 V, Fe 3 Pt, PtFe 3 , Au 3 Pd, Cr 2 Pd 3 , PtCu 3 , IrMn 3 , AuPd 3 , FeNi 3  and Au 3 Cu.  
   
   
       17 . The micro-electromechancial system of  claim 16  wherein the first substituent is selected from a group consisting of Ag, Al, Au, Bi, Cd, Ce, Co, Cu, Fe, Ga, Hg, In, Ir, La, Lu, Mg, Mn, Nd, Ni, Np, Pb, Pd, Pr, Pt, Rh, Ru, Sm, Sn, Zn and Zr.  
   
   
       18 . The micro-electromechancial system of  claim 16  wherein the second substituent is selected from a group consisting of Al, Am, Au, Ca, Cd, Ce, Co, Cr, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Ho, In, Ir, La, Li, Lu, Mg, Mn, Na, Nb, Nd, Np, Pa, Pb, Pd, Pr, Pt, Rh, Sb, Sc, Si, Sm, Sn, Sr, Ta, Th, Th, Ti, Tm, V, Y, Yb, Zn and Zr.  
   
   
       19 . A micro-electromechancial system comprising at least one component made from a substitutionally alloyed intermetallic compound comprising: 
 a base intermetallic compound having a major component and a minor component and having a generic formula of A x B y ,    a first substituent C and a second substituent D wherein at least one of the first and second substituents is partially substituted for an amount of one of the major component A or minor component B of the base intermetallic compound to an extent such that a susceptibility to creep is lessened and wherein a crystalline structure of the base intermetallic compound remains substantially the same, the resulting substitutionally alloyed intermetallic compound having a generic formula that is selected from a group of formulae consisting of A x (B (y-s) C s ), (A (x-s) C s )B y  or (A (x-s) C s )(B (y-t) D t ), wherein “s” and “t” are fractions.    
   
   
       20 . The micro-electromechancial system of  claim 19  wherein the base intermetallic compound substantially comprises a crystalline structure chosen from a group consisting of A15, B2, C14, C15, L1 0 , and L1 2 .  
   
   
       21 . The micro-electromechancial system of  claim 19  wherein the resulting substitutionally alloyed intermetallic compound has a crystalline structure that is substantially coherent.  
   
   
       22 . The micro-electromechancial system of  claim 19  wherein the fraction “s” is in the range of 0 to 50%.  
   
   
       23 . The micro-electromechancial system of  claim 22  wherein the fraction “s” is in the range of 1% to 20%.  
   
   
       24 . The micro-electromechancial system of  claim 19  wherein the fraction “t” is in the range of 0 to 50%.  
   
   
       25 . The micro-electromechancial system of  claim 24  wherein the fraction “t” is in the range of 1% to 20%.  
   
   
       26 . The micro-electromechancial system of  claim 20  wherein the base intermetallic compound is chosen from a group consisting of Ti 3 Ir, Mo 3 Ir, Nb 3 OS, Cr 3 Ge, AlMo 3 , Cr 3 Os, Cr 3 Pt, V 3 Si, Nb 3 Al, Nb 3 Ir, Ti 3 Pt, Nb 3 Pt, Nb 3 Au, Cr 3 Ir, V 3 Ga, Nb 3 In, V 3 Ir, V 3 Pt, V 3 Rh, BeCo, BeCu, AlIr, DyIn, TiCo, MgPd, NiGa, OsHf, HfRh, HoIn, CuPd, AuCd, TiOs, InPd, MgSc, PdZn, OsV, HgLi, AgLi, AlCo, AgMg, RuV, FeAl, CoGa, FeRh, CoFe, HfRe 2 , Fe 2 Ti, YbMg 2 , Be 2 W, Fe 2 Ta, Os 2 Hf, TiMn 2 , Fe 2 Nb, NbMn 2 , Mn 2 Hf, BeFe 2 , ZrMn 2 , Au 2 Na, CeIr 2 , CePt 2 , Co 2 Hf, Co 2 Ta, Co 2 Zr, Cu 2 Be, LaPt 2 , LiPt 2 , NdPt 2 , PrPt 2 , Pt 2 Eu, Pt 2 Gd, Rh 2 Er, ScNi 2 , SMPt 2 , ThIr 2 , ZrMo 2 , CoPt, HgPb, VRh, IrV, AuCu, PtZn, FePt, CdPd, CoPt 3 , FePd 3 , GeNi 3 , CrIr 3 , GaFe 3 , TaIr 3 , ZrIr 3 , PbPd 3 , YPd 3 , ErPd 3 , TiRh 3 , TiPt 3 , ZnPt 3 , GaNi 3 , NbRh 3 , GaPt 3 , TiPd 3 , TaRh 3 , CrPt 3 , HfRh 3 , VRh 3 , AuCu 3 , MnNi 3 , PdCu 3 , NbIr 3 , VIr 3 , Co 3 V, Fe 3 Pt, PtFe 3 , Au 3 Pd, Cr 2 Pd 3 , PtCu 3 , IrMn 3 , AuPd 3 , FeNi 3 , and Au 3 Cu.  
   
   
       27 . The micro-electromechancial system of  claim 20  wherein the first substituent C and second substituent D are chosen from a group consisting of Ag, Al, Am, As, Au, Ba, Be, Bi, Ca, Cd, Ce, Co, Cr, Cs, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Hg, Ho, In, Ir, K, La, Li, Lu, Mg, Mn, Mo, Na, Nb, Nd, Ni, Np, Os, Pa, Pb, Pd, Pm, Pr, Pt, Rb, Re, Rh, Ru, Sb, Sc, Si, Sm, Sn, Sr, Ta, Th, Te, Th, Ti, Tm, V, W, Y, Yb, Zn, and Zr.  
   
   
       28 . A method of forming a micro-electromechanical system comprising: 
 providing a base intermetallic compound having a major component and a minor component;    providing at least one substituent;    forming at least one source from the base intermetallic compound and the at least one substituent for use in a deposition process, the amount of the at least one substituent being such that creep in a resulting substitutionally alloyed intermetallic compound is reduced without substantially modifying the coherent crystalline structure of the base intermetallic compound; and,    forming a component of a micro-electromechanical system in a deposition process using the source formed from the base intermetallic compound and the at least one substituent.    
   
   
       29 . The method of forming a micro-electromechanical system of  claim 28  further comprising transferring material from the source to a substrate to form the component of the micro-electromechanical system in a manner chosen from a group consisting of physical vapor deposition, chemical vapor deposition, ion beam assisted deposition, ion beam sputtering deposition, thermal evaporation deposition, electron-beam evaporation deposition, atomic layer deposition, ion plating and reactive sputtering, cathodic arc deposition, atomic layer epitaxy, molecular beam epitaxy, and successive ionic layer adsorption and reaction.  
   
   
       30 . The method of forming a micro-electromechanical system of  claim 28  wherein the base intermetallic compound substantially comprises a crystalline structure chosen from a group consisting of A15, B2, C14, C15, L1 0  and L1 2 .  
   
   
       31 . The method of forming a micro-electromechanical system of  claim 30  wherein the base intermetallic compound is chosen from a group consisting of Ti 3 Ir, Mo 3 Ir, Nb 3 OS, Cr 3 Ge, AlMo 3 , Cr 3 Os, Cr 3 Pt, V 3 Si, Nb 3 Al, Nb 3 Ir, Ti 3 Pt, Nb 3 Pt, Nb 3 Au, Cr 3 Ir, V 3 Ga, Nb 3 In, V 3 Ir, V 3 Pt, V 3 Rh, BeCo, BeCu, AlIr, DyIn, TiCo, MgPd, NiGa, OsHf, HfRh, HoIn, CuPd, AuCd, TiOs, InPd, MgSc, PdZn, OsV, HgLi, AgLi, AlCo, AgMg, RuV, FeAl, CoGa, FeRh, CoFe, HfRe 2 , Fe 2 Ti, YbMg 2 , Be 2 W, Fe 2 Ta, Os 2 Hf, TiMn 2 , Fe 2 Nb, NbMn 2 , Mn 2 Hf, BeFe 2 , ZrMn 2 , Au 2 Na, CeIr 2 , CePt 2 , Co 2 Hf, Co 2 Ta, Co 2 Zr, Cu 2 Be, LaPt 2 , LiPt 2 , NdPt 2 , PrPt 2 , Pt 2 Eu, Pt 2 Gd, Rh 2 Er, ScNi 2 , SmPt 2 , Thlr 2 , ZrMo 2 , CoPt, HgPb, VRh, IrV, AuCu, PtZn, FePt, CdPd, CoPt 3 , FePd 3 , GeNi 3 , CrIr 3 , GaFe 3 , TaIr 3 , ZrIr 3 , PbPd 3 , YPd 3 , ErPd 3 , TiRh 3 , TiPt 3 , ZnPt 3 , GaNi 3 , NbRh 3 , GaPt 3 , TiPd 3 , TaRh 3 , CrPt 3 , HfIh 3 , VRh 3 , AuCu 3 , MnNi 3 , PdCu 3 , NbIr 3 , VIr 3 , Co 3 V, Fe 3 Pt, PtFe 3 , Au 3 Pd, Cr 2 Pd 3 , PtCu 3 , IrMn 3 , AuPd 3 , FeNi 3 , and Au 3 Cu.  
   
   
       32 . The method of forming a micro-electromechanical system of  claim 31  wherein the at least one substituent is chosen from a group consisting of Ag, Al, Am, As, Au, Ba, Be, Bi, Ca, Cd, Ce, Co, Cr, Cs, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Hg, Ho, In, Ir, K, La, Li, Lu, Mg, Mn, Mo, Na, Nb, Nd, Ni, Np, Os, Pa, Pb, Pd, Pm, Pr, Pt, Rb, Re, Rh, Ru, Sb, Sc, Si, Sm, Sn, Sr, Ta, Th, Te, Th, Ti, Tm, V, W, Y, Yb, Zn, and Zr.  
   
   
       33 . The method of forming a micro-electromechanical system of  claim 31  further comprising sintering the base intermetallic compound and the at least one substituent to form a source for use in one of a chemical and a physical deposition process.  
   
   
       34 . The method of forming a micro-electromechanical system of  claim 31  further comprising melting and casting the base intermetallic compound and the at least one substituent to form a source for use in one of a chemical and a physical deposition process.  
   
   
       35 . The method of forming a micro-electromechanical system of  claim 31  further comprising forming a separate source for each component of a desired substitutionally alloyed intermetallic material for use in one of a chemical and a physical deposition process.  
   
   
       37 . The method of forming a micro-electromechanical system of  claim 32  further comprising sintering the base intermetallic compound and the at least one substituent to form a source for use in one of a chemical and a physical deposition process.  
   
   
       38 . The method of forming a micro-electromechanical system of  claim 32  further comprising melting and casting the base intermetallic compound and the at least one substituent to form a source for use in one of a chemical and a physical deposition process.  
   
   
       39 . A micro-electromechancial system comprising at least one component made from an optimized substitutionally alloyed intermetallic compound comprising: a base intermetallic compound having a major component and a minor component, the base intermetallic compound being selected from a group consisting of Ti 3 Ir, Mo 3 Ir, Nb 3 Os, Cr 3 Ge, AlMo 3 , Cr 3 Os, Cr 3 Pt, V 3 Si, Nb 3 Al, Nb 3 Ir, Ti 3 Pt, Nb 3 Pt, Cr 3 Ir, V 3 Ga, Nb 3 In, V 3 Ir, V 3 Pt, V 3 Rh, AlIr, DyIn, TiCo, NiGa, OsHf, HfRh, HoIn, CuPd, TiOs, InPd, PdZn, OsV, AlCo, RuV, FeAl, CoGa, FeRh, CoFe, HfRe 2 , Fe 2 Ti, Fe 2 Ta, Os 2 Hf, TiMn 2 , Fe 2 Nb, NbMn 2 , Mn 2 Hf, ZrMn 2 , CeIr 2 , CePt 2 , Co 2 Hf, Co 2 Ta, Co 2 Zr, LaPt 2 , NdPt 2 , PrPt 2 , Pt 2 Eu, Pt 2 Gd, Rh 2 Er, ScNi 2 , SmPt 2 , ZrMo 2 , CoPt, VRh, IrV, PtZn, FePt, CoPt 3 , FePd 3 , GeNi 3 , CrIr 3 , GaFe 3 , TaIr 3 , ZrIr 3 , YPd 3 , ErPd 3 , TiRh 3 , TiPt 3 , ZnPt 3 , GaNi 3 , NbRh 3 , GaPt 3 , TiPd 3 , TaRh 3 , CrPt 3 , HfRh 3 , VRh 3 , MnNi 3 , PdCu 3 , NbIr 3 , VIr 3 , Co 3 V, Fe 3 Pt, PtFe 3 , Cr 2 Pd 3 , PtCu 3 , IrMn 3 , and FeNi 3 ; and, 
 at least one of a first substituent and a second substituent, the first and second substituents being substituted for one or both the major or minor components of the base intermetallic compound, respectively, in amounts sufficient to reduce creep in the resulting substitutionally alloyed intermetallic compound without substantially modifying the crystalline structure of the base intermetallic compound, the first and second substituents being selected from a group consisting of Ag, Al, Bi, Ce, Co, Cr, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Ho, In, Ir, La, Lu, Mn, Mo, Nb, Nd, Ni Os, Pd, Pr, Pt, Re, Re, Rh, Ru, Sb, Sc, Si, Sm, Sn, Ta, Th, Ti, Tm, V, W, Y, Yb, Zn, and Zr.    
   
   
       40 . A micro-electromechancial system comprising at least one component made from a substitutionally alloyed intermetallic compound comprising: 
 a base intermetallic compound; and,    at least one substituent, the at least substituent being substituted coherently for one or both of the components of the base binary intermetallic compound in amounts sufficient to reduce creep in the resulting substitutionally alloyed intermetallic compound without substantially modifying the crystalline structure of the base binary intermetallic compound.    
   
   
       41 . The micro-electromechancial system of  claim 40  wherein the at least one component is a flexure.  
   
   
       42 . The micro-electromechancial system of  claim 40  wherein the resulting substitutionally alloyed intermetallic compound has three or more components.  
   
   
       43 . The micro-electromechancial system of  claim 40  wherein the base intermetallic compound substantially comprises a crystalline structure chosen from a group consisting of A15, B2, C14, C15, L1 0 , and L1 2 .  
   
   
       44 . The micro-electromechancial system of  claim 43  wherein the base intermetallic compound substantially comprises an A15 crystalline structure and is chosen from a group consisting of Ti 3 Ir, Mo 3 Ir, Nb 3 Os, Cr 3 Ge, AlMo 3 , Cr 3 Os, Cr 3 Pt, V 3 Si, Nb 3 Al, Nb 3 Ir, Ti 3 Pt, Nb 3 Pt, Nb 3 Au, Cr 3 Ir, V 3 Ga, Nb 3 In, V 3 Ir, V 3 Pt, and V 3 Rh.  
   
   
       45 . The micro-electromechancial system of  claim 44  wherein at least one substituent is selected from a group consisting of Cr, Mo, Nb, Os, Re, Ta, Ti, V and Zr.  
   
   
       46 . The micro-electromechancial system of  claim 44  wherein at least one other substituent is selected from a group consisting of Al, As, Au, Co, Ga, Ge, Hg, In, Ir, Ni, Os, Pd, Pt, Rh, Ru, Sb, Si, Sn and V.  
   
   
       47 . The micro-electromechancial system of  claim 43  wherein the base intermetallic compound substantially comprises an B2 crystalline structure and is chosen from a group consisting of BeCo, BeCu, AlIr, DyIn, TiCo, MgPd, NiGa, OsHf, HfRh, HoIn, CuPd, AuCd, TiOs, InPd, MgSc, PdZn, OsV, HgLi, AgLi, AlCo, AgMg, RuV, FeAl, CoGa, FeRh and CoFe.  
   
   
       48 . The micro-electromechancial system of  claim 47  wherein at least one substituent is selected from a group consisting of Ag, Al, Au, Ba, Be, Bi, Ca, Cd, Ce, Co, Cs, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Hg, Ho, In, Ir, La, Li, Lu, Mg, Mn, Nb, Nd, Ni, Os, Pb, Pd, Pr, Pt, Rb, Rh, Ru, Sc, Si, Sm, Sr, Ta, Th, Te, Th, Ti, Tm, V, Y, Yb, Zn and Zr.  
   
   
       49 . The micro-electromechancial system of  claim 43  wherein the base intermetallic compound substantially comprises an C14 crystalline structure and is chosen from a group consisting of HfRe 2 , Fe 2 Ti, YbMg 2 , Be 2 W, Fe 2 Ta, Os 2 Hf, TiMn 2 , Fe 2 Nb, NbMn 2 , Mn 2 Hf, BeFe 2  and ZrMn 2 .  
   
   
       50 . The micro-electromechancial system of  claim 49  wherein at least one substituent is selected from a group consisting of Al, Be, Co, Cr, Fe, Li, Mg, Mn, Os, Re, Rh, Ru and Zn.  
   
   
       51 . The micro-electromechancial system of  claim 49  wherein at least one other substituent is selected from a group consisting of Am, Ba, Be, Ca, Cr, Dy, Er, Eu, Fe, Gd, Hf, Ho, La, Lu, Mg, Mo, Nb, Nd, Np, Os, Pr, Ru, Sc, Sm, Ta, Th, Th, Ti, Tm, V, W, Y, Yb and Zr.  
   
   
       52 . The micro-electromechancial system of  claim 43  wherein the base intermetallic compound substantially comprises an C15 crystalline structure and is chosen from a group consisting of Au 2 Na, CeIr 2 , CePt 2 , Co 2 Hf, Co 2 Ta, Co 2 Zr, Cu 2 Be, LaPt 2 , LiPt 2 , NdPt 2 , PrPt 2 , Pt 2 Eu, Pt 2 Gd, Rh 2 Er, ScNi 2 , SmPt 2 , ThIr 2  and ZrMo 2 .  
   
   
       53 . The micro-electromechancial system of  claim 52  wherein at least one substituent is selected from a group consisting of Ag, Al, Au, Be, Bi, Co, Cr, Cu, Fe, Ir, Mg, Mn, Mo, Ni, Os, Pd, Pt, Rh, Ru, V, W and Zn.  
   
   
       54 . The micro-electromechancial system of  claim 52  wherein at least one other substituent is selected from a group consisting of Ag, Am, Ba, Be, Bi, Ca, Ce, Cs, Dy, Er, Eu, Fe, Gd, Hf, Ho, K, La, Li, Lu, Mg, Na, Nb, Nd, Np, Pb, Pm, Pr, Rb, Sc, Sm, Sr, Ta, Th, Th, Ti, Tm, Y, Yb and Zr.  
   
   
       55 . The micro-electromechancial system of  claim 43  wherein the base intermetallic compound substantially comprises an L1 0  crystalline structure and is chosen from a group consisting of CoPt, HgPb, VRh, IrV, AuCu, PtZn, FePt and CdPd.  
   
   
       56 . The micro-electromechancial system of  claim 55  wherein at least one substituent is selected from a group consisting of Al, Au, Bi, Ca, Cd, Co, Cr, Cu, Eu, Fe, Ga, Hf, Hg, In, Ir, Mg, Mn, Na, Nb, Ni, Pb, Pd, Pt, Rh, Ru, Sn, Ta, Ti, V, Yb, Zn and Zr.  
   
   
       57 . The micro-electromechancial system of  claim 43  wherein the base intermetallic compound substantially comprises an L1 2  crystalline structure and is chosen from a group consisting of CoPt 3 , FePd 3 , GeNi 3 , CrIr 3 , GaFe 3 , TaIr 3 , ZrIr 3 , PbPd 3 , YPd 3 , ErPd 3 , TiRh 3 , TiPt 3 , ZnPt 3 , GaNi 3 , NbRh 3 , GaPt 3 , TiPd 3 , TaRh 3 , CrPt 3 , HfRh 3 , VRh 3 , AuCu 3 , MnNi 3 , PdCu 3 , NbIr 3 , VIr 3 , Co 3 V, Fe 3 Pt, PtFe 3 , Au 3 Pd, Cr 2 Pd 3 , PtCu 3 , IrMn 3 , AuPd 3 , FeNi 3  and Au 3 Cu.  
   
   
       58 . The micro-electromechancial system of  claim 57  wherein at least one substituent is selected from a group consisting of Ag, Al, Au, Bi, Cd, Ce, Co, Cu, Fe, Ga, Hg, In, Ir, La, Lu, Mg, Mn, Nd, Ni, Np, Pb, Pd, Pr, Pt, Rh, Ru, Sm, Sn, Zn and Zr.  
   
   
       59 . The micro-electromechancial system of  claim 57  wherein at least one other substituent is selected from a group consisting of Al, Am, Au, Ca, Cd, Ce, Co, Cr, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Ho, In, Ir, La, Li, Lu, Mg, Mn, Na, Nb, Nd, Np, Pa, Pb, Pd, Pr, Pt, Rh, Sb, Sc, Si, Sm, Sn, Sr, Ta, Tb, Th, Ti, Tm, V, Y, Yb, Zn and Zr.  
   
   
       60 . The micro-electromechancial system of  claim 40  wherein: 
 the base intermetallic compound is selected from a group consisting of Ti 3 Ir, Mo 3 Ir, Nb 3 Os, Cr 3 Ge, AlMo 3 , Cr 3 Os, Cr 3 Pt, V 3 Si, Nb 3 Al, Nb 3 Ir, Ti 3 Pt, Nb 3 Pt, Cr 3 Ir, V 3 Ga, Nb 3 In, V 3 Ir, V 3 Pt, V 3 Rh, AlIr, DyIn, TiCo, NiGa, OsHf, HfRh, HoIn, CuPd, TiOs, InPd, PdZn, OsV, AlCo, RuV, FeAl, CoGa, FeRh, CoFe, HfRe 2 , Fe 2 Ti, Fe 2 Ta, Os 2 Hf, TiMn 2 , Fe 2 Nb, NbMn 2 , Mn 2 Hf, ZrMn 2 , CeIr 2 , CePt 2 , Co 2 Hf, Co 2 Ta, Co 2 Zr, LaPt 2 , NdPt 2 , PrPt 2 , Pt 2 Eu, Pt 2 Gd, Rh 2 Er, ScNi 2 , SmPt 2 , ZrMo 2 , CoPt, VRh, IrV, PtZn, FePt, CoPt 3 , FePd 3 , GeNi 3 , CrIr 3 , GaFe 3 , TaIr 3 , Zrfr 3 , YPd 3 , ErPd 3 , TiRh 3 , TiPt 3 , ZnPt 3 , GaNi 3 , NbRh 3 , GaPt 3 , TiPd 3 , TaRh 3 , CrPt 3 , HfRh 3 , VRh 3 , MnNi 3 , PdCu 3 , NbIr 3 , VIr 3 , Co 3 V, Fe 3 Pt, PtFe 3 , Cr 2 Pd 3 , PtCu 3 , IrMn 3 , and FeNi 3 ; and,    the at least one substituent is substituted for one or all the components of the base intermetallic compound in amounts sufficient to reduce creep in the resulting substitutionally alloyed intermetallic compound without substantially modifying the crystalline structure of the base intermetallic compound, the at least one substituent being selected from a group consisting of Ag, Al, Bi, Ce, Co, Cr, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Ho, In, Ir, La Lu, Mn, Mo, Nb, Nd, Ni, Os, Pd, Pr, Pt, Re, Re, Rh, Ru, Sb, Sc, Si, Sm, Sn, Ta, Tb, Ti, Tm, V, W, Y, Yb, Zn, and Zr.