Tandem uv chamber for curing dielectric materials

Abstract

An ultraviolet (UV) cure chamber enables curing a dielectric material disposed on a substrate and in situ cleaning thereof. A tandem process chamber provides two separate and adjacent process regions defined by a body covered with a lid having windows aligned respectively above each process region. One or more UV bulbs per process region that are covered by housings coupled to the lid emit UV light directed through the windows onto substrates located within the process regions. The UV bulbs can be an array of light emitting diodes or bulbs utilizing a source such as microwave or radio frequency. The UV light can be pulsed during a cure process. Using oxygen radical/ozone generated remotely and/or in-situ accomplishes cleaning of the chamber. Use of lamp arrays, relative motion of the substrate and lamp head, and real-time modification of lamp reflector shape and/or position can enhance uniformity of substrate illumination.

1 . An ultraviolet (UV) curing chamber for curing dielectric materials disposed on substrates, comprising: 
 a body defining first and second process regions that are separate and adjacent to one another;    a lid coupled to a top of the body to cover the first and second process regions, wherein the lid includes first and second quartz windows aligned respectively above the first and second process regions; and    first and second UV bulbs disposed respectively above the first and second windows.    
   
   
       2 . The UV curing chamber of  claim 1 , wherein gas inlets into the first and second process regions are adapted to supply ozone to the process regions for a cleaning process.  
   
   
       3 . The UV curing chamber of  claim 1 , further comprising first and second housings coupled to the lid and respectively covering the first and second UV bulbs and a central air source in fluid communication with an interior of the first housing and an interior of the second housing to cool the UV bulbs disposed therein.  
   
   
       4 . The UV curing chamber of  claim 3 , further comprising a common exhaust system in fluid communication with the interior of the first housing and the interior of the second housing to collect heated air therein and remove ozone from the air.  
   
   
       5 . The UV curing chamber of  claim 3 , wherein the first and second housings have respective first and second quartz linings coated with dichroic films.  
   
   
       6 . The UV curing chamber of  claim 3 , wherein the first and second housings have respective first and second reflectors that are movable to adjust patterns of UV light directed by the reflectors into the process regions.  
   
   
       7 . The UV curing chamber of  claim 1 , further comprising first and second heated and movable pedestals disposed respectively within the first and second process regions for supporting the substrates.  
   
   
       8 . The UV curing chamber of  claim 1 , further comprising at least one power source for activation of the bulbs, each power source being at least one microwave generator.  
   
   
       9 . The UV curing chamber of  claim 1 , further comprising at least one power source for activation of the bulbs, each power source being at least one radio frequency generator.  
   
   
       10 . The UV curing chamber of  claim 1 , further comprising a power source configured to pulse the bulbs for curing substrates with pulses of UV light.  
   
   
       11 . The UV curing chamber of  claim 1 , wherein the UV bulbs have long axes oriented vertically with respect to first and second substrates located respectively in the first and second process regions.  
   
   
       12 . An ultraviolet (UV) curing chamber for curing a dielectric material disposed on a substrate, comprising: 
 a body defining a process region where the substrate is supported;    a lid coupled to a top of the body to cover and seal a top of the process region;    first and second UV bulbs disposed above the process region; and    a housing coupled to the lid and covering the first and second UV bulbs.    
   
   
       13 . The UV curing chamber of  claim 12 , further comprising first and second windows individually surrounding the first and second UV bulbs, respectively, for passing a cooling gas through annular spaces defined between the bulbs and the windows.  
   
   
       14 . The UV curing chamber of  claim 12 , wherein the body defines a corresponding and analogous additional process region separate from and adjacent to the process region.  
   
   
       15 . The UV curing chamber of  claim 12 , wherein the first UV bulb emits UV light of a first wavelength distribution different from a second wavelength distribution emitted by the second UV bulb.  
   
   
       16 . The UV curing chamber of  claim 12 , wherein the first UV bulb is capable of being turned on independently of the second UV bulb.  
   
   
       17 . The UV curing chamber of  claim 12 , wherein the first and second UV bulbs are part of an array of light emitting diodes.  
   
   
       18 . The UV curing chamber of  claim 12 , wherein the first and second UV bulbs are part of an array of light emitting diodes and the lid includes gas outlets interleaved among the array of light emitting diodes.  
   
   
       19 - 22 . (canceled)  
   
   
       23 . A semiconductor processing system, comprising: 
 a transfer chamber;    a series of tandem process chambers mounted on the transfer chamber, wherein the tandem process chambers comprise an ultraviolet (UV) curing chamber for curing dielectric materials disposed on substrates, comprising:    a body defining first and second process regions that are separate and adjacent to one another;    a lid coupled to a top of the body to cover the first and second process regions, wherein the lid includes first and second quartz windows aligned respectively above the first and second process regions; and    first and second UV bulbs disposed respectively above the first and second windows.    
   
   
       24 . The semiconductor processing system of  claim 23 , wherein the first and second UV bulbs are part of an array of light emitting diodes and the lid includes gas outlets interleaved among the array of light emitting diodes.  
   
   
       25 . The semiconductor processing system of  claim 23 , wherein each of the tandem process chambers comprises an ultraviolet (UV) curing chamber for curing dielectric materials disposed on substrates, comprising: 
 a body defining first and second process regions that are separate and adjacent to one another;    a lid coupled to a top of the body to cover the first and second process regions, wherein the lid includes first and second quartz windows aligned respectively above the first and second process regions; and    first and second UV bulbs disposed respectively above the first and second windows.    
   
   
       26 . The semiconductor processing system of  claim 23 , wherein the tandem process chambers further comprise a chemical vapor deposition chamber.