Semiconductor device

Abstract

A semiconductor device has a first substrate and a second substrate. The first substrate has first electrodes on at least one surface. The second substrate has concave portions on a surface, and second electrodes provided on bottom surfaces of the concave portions. The semiconductor device further has metallic members located between the first electrodes of the first substrate and the second electrodes of the second substrate. The metallic members have a height greater than a depth of the concave portions of the second substrate, and electrically and mechanically bond the first electrodes of the first substrate and the second electrodes of the second substrate.

1 - 16 . (canceled)  
   
   
       17 . A semiconductor device comprising: 
 a first substrate having first electrodes formed on at least one surface;    a second substrate having concave portions on a surface, the concave portions having flat bottom surfaces, and second electrodes provided on the bottom surfaces of the concave portions; and    metallic members located between the first electrodes of the first substrate and the second electrodes of the second substrate, the metallic members electrically and mechanically bonding the first electrodes of the first substrate and the second electrodes of the second substrate, so that each of the metallic members has a first contact portion contacting with one of the first electrodes and a second contact portion contacting with one of the second electrodes, and a minimum distance between the first and second contact portions being larger than a minimum distance between the surfaces of the first and second substrates.    
   
   
       18 . The semiconductor device according to  claim 17 , wherein one of the first substrate and the second substrate comprises a semiconductor substrate, and the semiconductor substrate has a movable portion that mechanically operates, and a third electrode to exert a driving force that operates the movable portion.  
   
   
       19 . The semiconductor device according to  claim 18 , wherein the first electrodes are located at different heights from the surface of the first substrate, and the concave portions have different depths so that all spaces between the first electrodes and the second electrodes are equal.  
   
   
       20 . The semiconductor device according to  claim 18 , wherein the first substrate and the second substrate are made of materials having different thermal expansion coefficients.  
   
   
       21 . The semiconductor device according to  claim 18 , wherein the material of the second substrate is a semiconductor, and the material of the first substrate is an insulating inorganic material.  
   
   
       22 . The semiconductor device according to  claim 21 , the semiconductor device being directed to an application to an optical system, wherein the material of the first substrate is a material having optical transparency in a wavelength band of light to be used.  
   
   
       23 . The semiconductor device according to  claim 18 , wherein each of the metallic members comprises at least two metallic portions in a direction in which the substrates are spaced.  
   
   
       24 . The semiconductor device according to  claim 18 , wherein the material of the metallic members is gold, and portions near surfaces of the first electrodes and the second electrodes are made of a conductive material that has satisfactory mutual diffusibility with gold when gold is connected to the first electrodes or the second electrodes.  
   
   
       25 . The semiconductor device according to  claim 24 , wherein at least one of the first electrodes and the second electrodes is gold.  
   
   
       26 . The semiconductor device according to  claim 17 , wherein the first electrodes are located at different heights from the surface of the first substrate, and the concave portions have different depths so that all spaces between the first electrodes and the second electrodes are equal.  
   
   
       27 . The semiconductor device according to  claim 17 , wherein the first substrate and the second substrate are made of materials having different thermal expansion coefficients.  
   
   
       28 . The semiconductor device according to  claim 17 , wherein the material of the second substrate is a semiconductor, and the material of the first substrate is an insulating inorganic material.  
   
   
       29 . The semiconductor device according to  claim 28 , the semiconductor device being directed to an application to an optical system, wherein the material of the first substrate is a material having optical transparency in a wavelength band of light to be used.  
   
   
       30 . The semiconductor device according to  claim 17 , wherein comprise the metallic members comprises at least two metallic portions in a direction in which the substrates are spaced.  
   
   
       31 . The semiconductor device according to  claim 17 , wherein the material of the metallic members is gold, and portions near surfaces of the first electrodes and the second electrodes are made of a conductive material that has satisfactory mutual diffusibility with gold when gold is connected to the first electrodes or the second electrodes.  
   
   
       32 . The semiconductor device according to  claim 31 , wherein at least one of the first electrodes and the second electrodes is gold.