Wiring line structure and method for forming the same

Abstract

The wiring line structure comprises a transparent substrate, a barrier layer, a metal layer, and a photosensitive protecting layer. The barrier layer and a metal layer are successively disposed on the transparent substrate. The photosensitive protecting layer is formed on the barrier layer and both sides of the metal layer. A method for fabricating the wiring line structure is also disclosed.

1 . A wiring line structure, comprising: 
 a first barrier layer disposed on a transparent substrate;    a metal layer disposed on the first barrier layer; and    a photosensitive protecting layer disposed on the first barrier layer and both sides of the metal layer.    
   
   
       2 . The wiring line structure of  claim 1 , wherein the first barrier layer comprises Mo, W, Mo—W alloy, Cr, Ta, Ti, TiN, Ti—W alloy, Rh, Re, Ru, or Co.  
   
   
       3 . The wiring line structure of  claim 1 , wherein the first barrier layer comprises an insulating material.  
   
   
       4 . The wiring line structure of  claim 1 , further comprising a second barrier layer disposed on the metal layer.  
   
   
       5 . The wiring line structure of  claim 4 , wherein the second barrier layer comprises at least one of Co and Ni.  
   
   
       6 . The wiring line structure of  claim 1 , wherein the metal layer comprises Cu.  
   
   
       7 . The wiring line structure of  claim 1 , wherein the photosensitive protecting layer comprises a low dielectric constant (low-k) material, and the dielectric constant of the low-k material ranges from about 2.7 to about 3.4.  
   
   
       8 . The wiring line structure of  claim 1 , wherein the photosensitive protecting layer comprises polysilsesquiazane.  
   
   
       9 . The wiring line structure of  claim 1 , further comprising an adhesion layer disposed between the first barrier layer and the metal layer.  
   
   
       10 . The wiring line structure of  claim 9 , wherein the adhesion layer comprises metal oxide, metal nitride, metal, or a combination thereof.  
   
   
       11 . A display device comprising the wiring line structure of  claim 1 .  
   
   
       12 . A method for fabricating a wiring line structure, comprising: 
 forming a first barrier layer on a transparent substrate;    forming a photosensitive pattern layer on the first barrier layer, the photosensitive pattern layer comprising an opening to expose at least part of the first barrier layer;    filling a metal layer into the opening;    selectively removing the photosensitive pattern layer to form a photosensitive protecting layer on both sides of the metal layer; and    removing the first barrier layer uncovered by the photosensitive protecting layer and the metal layer.    
   
   
       13 . The method of  claim 12 , wherein formation of the photosensitive pattern layer comprises: 
 forming a photosensitive layer on the first barrier layer ; and    patterning the photosensitive layer to form the opening therein;    wherein the photosensitive pattern layer comprises a first portion adjacent to the opening and thicker than a second portion laterally extending therefrom.    
   
   
       14 . The method of  claim 13 , wherein the thickness of the first portion of the photosensitive pattern layer ranges from about 1000 nm to about 3000 nm.  
   
   
       15 . The method of  claim 13 , wherein the thickness of the second portion of the photosensitive pattern layer is substantially less than about 2500 nm.  
   
   
       16 . The method of  claim 12 , wherein the metal layer is formed in the opening by electrochemical plating.  
   
   
       17 . The method of  claim 12 , wherein the photosensitive pattern layer is formed using a half-tone mask, a slit-pattern mask, or a gray mask.  
   
   
       18 . The method of  claim 12 , wherein the thickness of the first barrier layer ranges from about 20 nm to about 200 nm.  
   
   
       19 . The method of  claim 12 , wherein the first barrier layer comprises Mo, W, Mo—W alloy, Cr, Ta, Ti, TiN, Ti—W alloy, Rh, Re, Ru, or Co.  
   
   
       20 . The method of  claim 12 , wherein the first barrier layer comprises an insulating material.  
   
   
       21 . The method of  claim 12 , further comprising forming a second barrier layer on the metal layer.  
   
   
       22 . The method of  claim 21 , wherein the thickness of the second barrier layer ranges from about 5 nm to about 50 nm.  
   
   
       23 . The method of  claim 21 , wherein the second barrier layer comprises at least one of Co and Ni.  
   
   
       24 . The method of  claim 21 , wherein the second barrier layer is formed on the metal layer by electrochemical plating.  
   
   
       25 . The method of  claim 12 , wherein the metal layer comprises Cu.  
   
   
       26 . The method of  claim 12 , wherein the photosensitive protecting layer comprises a low dielectric constant (low-k) material, and the dielectric constant of the low-k material ranges from about 2.7 to about 3.4.  
   
   
       27 . The method of  claim 12 , wherein the photosensitive protecting layer comprises polysilsesquiazane.  
   
   
       28 . The method of  claim 12 , wherein the selective removal of the photosensitive pattern layer comprises: 
 forming a photoresist layer on the photosensitive pattern layer and the metal layer;    patterning the photoresist layer to form an etch masking layer covering the metal layer and a portion of the photosensitive pattern layer on both sides thereof; and    removing the photosensitive pattern layer uncovered by the etch masking layer.    
   
   
       29 . The method of  claim 28 , further comprising forming a second barrier layer on the metal layer.  
   
   
       30 . The method of  claim 29 , wherein the thickness of the second barrier layer ranges from about 5 nm to about 50 nm.  
   
   
       31 . The method of  claim 29 , wherein the second barrier layer comprises at least one of Co and Ni.  
   
   
       32 . The method of  claim 29 , wherein the second barrier layer is formed on the metal layer by electrochemical plating.  
   
   
       33 . The method of  claim 12 , further comprising forming an adhesion layer between the first barrier layer and metal layer.  
   
   
       34 . The method of  claim 33 , wherein the adhesion layer comprises metal oxide, metal nitride, metal, or a combination thereof.