Image sensors

Abstract

An image detection apparatus includes a p-type substrate with at least one n-well therein. Images may be detected through a detection surface of the p-type substrate. The image detection apparatus also includes a capacitor, a baseline potential transistor, and a signal transmission transistor. A first electrode of the capacitor communicates with the n-well. A second side of the capacitor communicates with the baseline potential transistor and the signal transmission transistor. The baseline potential transistor and the signal transmission transistor may share a drain. The n-well is also configured to communicate with a display element, such as an emission tip, of a pixel of a display element.

1 . An imaging system, comprising: 
 a p-type substrate comprising an image detection surface;    an n-well recessed in the p-type substrate;    a diffusion region between the p-type substrate and the n-well;    at least one emitter tip disposed in communication with the n-well;    a capacitor, a first side of which is in communication with the n-well;    a baseline potential transistor in communication with a second side of the capacitor; and    a signal transmission transistor in communication with the second side of the capacitor.    
   
   
       2 . The imaging system of  claim 1 , wherein the baseline potential transistor and the signal transmission transistor share a common drain.  
   
   
       3 . The imaging system of  claim 1 , wherein a distance between the image detection surface and the n-well facilitates detection of electromagnetic radiation of a near infrared wavelength.  
   
   
       4 . The imaging system of  claim 1 , wherein a distance between the image detection surface and the n-well facilitates detection of electromagnetic radiation of a visible wavelength.  
   
   
       5 . The imaging system of  claim 12 , wherein the image signal detector is in communication with a source node of the signal transmission transistor.  
   
   
       6 . The imaging system of  claim 1 , further comprising: 
 a shutter component.    
   
   
       7 . The imaging system of  claim 6 , wherein the shutter component is configured to prevent electromagnetic radiation from impinging the n-well.  
   
   
       8 . The imaging system of  claim 1 , wherein the diffusion region is located proximate to the image detection surface and further comprising a layer of detection enhancement material adjacent the image detection surface.  
   
   
       9 . The imaging system of  claim 8 , wherein the detection enhancement material comprises a platinum silicide.  
   
   
       10 . The imaging system of  claim 1 , wherein the p-type substrate and the n-well each comprise a detection enhancement material.  
   
   
       11 . The imaging system of  claim 10 , wherein the detection enhancement material comprises a mercury-cadmium-tellurium alloy.  
   
   
       12 . The imaging system of  claim 1 , further comprising: 
 an image signal detector associated with the signal transmission transistor.    
   
   
       13 . The imaging system of  claim 1 , further comprising: 
 an extraction electrode including at least one aperture therethrough located substantially over the at least one emitter tip.    
   
   
       14 . The imaging system of  claim 13 , further comprising: 
 a cathodo-luminescent display disposed substantially parallel to and spaced apart from the extraction electrode and including at least one display pixel corresponding to the at least one emitter tip.    
   
   
       15 . The imaging system of  claim 1 , comprising an array including a plurality of n-wells, emitter tips, capacitors, baseline potential transistors, and signal transmission transistors.  
   
   
       16 . An image detection apparatus, comprising: 
 a p-type substrate comprising an emission surface, an array of n-type wells disposed in the p-type substrate substantially along a plane proximate the emission surface, a p-n junction between the p-type substrate and each n-well of the array of n-type wells, and an image detection surface opposite the emission surface;    an array of emission pixels, each comprising at least one emitter tip protruding from the emission surface and in communication with a corresponding n-well of the array of n-type wells;    a capacitor in communication with selected n-wells of the array of n-type wells;    a signal transmission transistor in communication with the capacitor;    a baseline potential transistor in communication with the capacitor.    
   
   
       17 . The apparatus of  claim 16 , wherein the signal transmission transistor and the baseline potential transistor share a drain node.  
   
   
       18 . The apparatus of  claim 31 , wherein the image signal detector communicates with a source node of the signal transmission transistor.  
   
   
       19 . The apparatus of  claim 16 , further comprising: 
 a shutter.    
   
   
       20 . The apparatus of  claim 19 , wherein the shutter prevents electromagnetic radiation from penetrating selected n-wells of the array of n-type wells.  
   
   
       21 . The apparatus of  claim 19 , wherein the shutter is positionable over a selected region of the image detection surface.  
   
   
       22 . The apparatus of  claim 16 , wherein a distance between the image detection surface and an n-well of the array of n-type wells facilitates impingement of the p-n junction by electromagnetic radiation of an infrared or a near infrared wavelength.  
   
   
       23 . The apparatus of  claim 16 , wherein a distance between the image detection surface and an n-well of the array of n-wells facilitates impingement of the p-n junction by electromagnetic radiation of a visible wavelength.  
   
   
       24 . The apparatus of  claim 16 , further comprising: 
 a display disposed adjacent, substantially parallel to, and spaced apart from the emission surface.    
   
   
       25 . The apparatus of  claim 24 , wherein the display comprises an array of display pixels, each display pixel of which corresponds substantially to at least one emission pixel of the array of emission pixels.  
   
   
       26 . The apparatus of  claim 24 , wherein the display comprises a cathodo-luminescent display.  
   
   
       27 . The apparatus of  claim 16 , wherein the p-n junction is located proximate to the image detection surface, the apparatus further comprising a layer of detection enhancement material adjacent the image detection surface.  
   
   
       28 . The apparatus of  claim 27 , wherein the detection enhancement material comprises a platinum silicide.  
   
   
       29 . The apparatus of  claim 16 , the p-type substrate and the array of n-type wells each comprise a detection enhancement material.  
   
   
       30 . The apparatus of  claim 29 , wherein the detection enhancement material comprises a mercury-cadmium-tellurium alloy.  
   
   
       31 . The apparatus of  claim 16 , further comprising: 
 an image signal detector in communication with the signal transmission transistor.    
   
   
       32 . An imaging apparatus, comprising: 
 a p-type substrate comprising an image detection surface;    an n-well recessed in the p-type substrate for communicating with at least one display element of a pixel;    a capacitor including first and second electrodes, the first electrode in communication with the n-well;    a baseline potential transistor in communication with the second electrode; and    a signal transmission transistor in communication with the second electrode.    
   
   
       33 . The imaging apparatus of  claim 32 , wherein the baseline potential transistor and the signal transmission transistor share a common drain.  
   
   
       34 . The imaging apparatus of  claim 32 , wherein a distance between the image detection surface and the n-well facilitates detection of electromagnetic radiation of a near infrared wavelength.  
   
   
       35 . The imaging apparatus of  claim 32 , wherein a distance between the image detection surface and the n-well facilitates detection of electromagnetic radiation of a visible wavelength.  
   
   
       36 . The imaging apparatus of  claim 43 , wherein the image signal detector is in communication with a source node of the signal transmission transistor.  
   
   
       37 . The imaging apparatus of  claim 32 , further comprising: 
 a shutter component.    
   
   
       38 . The imaging apparatus of  claim 37 , wherein the shutter component is configured to prevent electromagnetic radiation from impinging the n-well.  
   
   
       39 . The imaging apparatus of  claim 32 , wherein the diffusion region is located proximate to the image detection surface and further comprising a layer of detection enhancement material adjacent the image detection surface.  
   
   
       40 . The imaging apparatus of  claim 39 , wherein the detection enhancement material comprises a platinum silicide.  
   
   
       41 . The imaging apparatus of  claim 32 , wherein the p-type substrate and the n-well each comprise a detection enhancement material.  
   
   
       42 . The imaging apparatus of  claim 41 , wherein the detection enhancement material comprises a mercury-cadmium-tellurium alloy.  
   
   
       43 . The imaging apparatus of  claim 32 , wherein the signal transmission transistor is configured to communicate with an image signal detector.  
   
   
       44 . The imaging apparatus of  claim 32 , wherein the n-well is configured to communicate with an emitter tip.  
   
   
       45 . The imaging system of  claim 32 , comprising an array including a plurality of n-wells, capacitors, baseline potential transistors, and signal transmission transistors.