Field emission type cold cathode device, manufacturing method thereof and vacuum micro device

Abstract

A field emission type cold cathode device comprises a substrate, and a metal plating layer formed on the substrate, the metal plating layer contains at least one carbon structure selected from a group of fullerenes and carbon nanotubes, the carbon structure is stuck out from the metal plating layer and a part of the carbon structure is buried in the metal plating layer.

1 - 13 . (canceled)  
     
     
         14 . A manufacturing method of field emission type cold cathode devices comprising: 
 immersing a substrate on which a cathode line is formed in a plating liquid containing at least one carbon structure selected from a group of fullerene and carbon nanotube; and    forming a metal plating layer along a top surface of said cathode line by electroplating processing or electroless plating processing, said metal plating layer having a substantially uniform thickness and containing said carbon structure, said carbon structure being stuck out from said metal plating layer and a part of said carbon structure being buried in said metal plating layer.    
     
     
         15 - 18 . (canceled)  
     
     
         19 . The manufacturing method according to  claim 14 , wherein forming said metal plating layer includes forming said metal plating layer along top and side surfaces of said cathode line.  
     
     
         20 . The manufacturing method according to  claim 14 , wherein said metal plating layer is formed by electroplating processing, and said carbon nanotube stuck out from said metal plating layer is perpendicular to the top surface of said cathode line.  
     
     
         21 . The manufacturing method according to  claim 14 , wherein said metal plating layer is selected from a group of nickel, chromium and copper.  
     
     
         22 . A manufacturing method of field emission type cold cathode device comprising: 
 forming a cathode line on a substrate; and    forming a metal plating layer along a top surface of said cathode line by electroplating processing or electroless plating processing, said metal plating layer having a substantially uniform thickness and containing at least one carbon structure selected from a group of fullerene and carbon nanotube, said carbon structure being stuck out from said metal plating layer and a part of said carbon structure being buried in said metal plating layer.    
     
     
         23 . The manufacturing method according to  claim 22 , wherein forming said metal plating layer includes forming said metal plating layer along top and side surfaces of said cathode line.  
     
     
         24 . The manufacturing method according to  claim 22 , wherein said metal plating layer is formed by electroplating processing, and said carbon nanotube stuck out from said metal plating layer is perpendicular to the top surface of said cathode line.  
     
     
         25 . The manufacturing method according to  claim 22 , wherein said metal plating layer is selected from a group of nickel, chromium and copper.  
     
     
         26 . A manufacturing method of vacuum micro device comprising: 
 forming a cathode line on a substrate;    forming a metal plating layer along a top surface of said cathode line by electroplating processing or electroless plating processing, said metal plating layer having a substantially uniform thickness and containing at least one carbon structure selected from a group of fullerene and carbon nanotube, said carbon structure being stuck out from said metal plating layer and a part of said carbon structure being buried in said metal plating layer; and    forming an electrode disposed separately from said substrate, said electrode having applied thereto a higher electrical potential than an electrical potential applied to said metal plating layer.    
     
     
         27 . The manufacturing method according to  claim 26 , wherein forming said metal plating layer includes forming said metal plating layer along top and side surfaces of said cathode line.  
     
     
         28 . The manufacturing method according to  claim 26 , wherein said metal plating layer is formed by electroplating processing, and said carbon nanotube stuck out from said metal plating layer is perpendicular to the top surface of said cathode line.  
     
     
         29 . The manufacturing method according to  claim 26 , wherein said metal plating layer is selected from a group of nickel, chromium and copper.  
     
     
         30 . A manufacturing method of vacuum micro device comprising: 
 forming a cathode line on a first substrate;    forming a metal plating layer along a top surface of said cathode line by electroplating processing or electroless plating processing, said metal plating layer having a substantially uniform thickness and containing at least one carbon structure selected from a group of fullerene and carbon nanotube, said carbon structure being stuck out from said metal plating layer and a part of said carbon structure being buried in said metal plating layer;    forming an electrode on a second substrate, said electrode having applied thereto a higher electrical potential than an electrical potential applied to said metal plating layer;    forming a luminescent material on said electrode; and    arranging said first substrate and said second substrate in a face-to face relation.    
     
     
         31 . The manufacturing method according to  claim 30 , wherein forming said metal plating layer includes forming said metal plating layer along top and side surfaces of said cathode line.  
     
     
         32 . The manufacturing method according to  claim 30 , wherein said metal plating layer is formed by electroplating processing, and said carbon nanotube stuck out from said metal plating layer is perpendicular to the top surface of said cathode line.  
     
     
         33 . The manufacturing method according to  claim 30 , wherein said metal plating layer is selected from a group of nickel, chromium and copper.