Capacitor, semiconductor device having the same, and method of manufacturing the semiconductor device

Abstract

A semiconductor device with a stack type capacitor having a lower electrode formed of an aluminum-doped metal, and a manufacturing method thereof are provided. The semiconductor device includes: a semiconductor substrate having a gate structure and an active region; an interlayer dielectric film formed on the active region; a lower electrode formed of a metal containing aluminum on the interlayer dielectric film; a dielectric layer formed on the lower electrode; an upper electrode formed on the dielectric layer; and a plug formed in the interlayer dielectric film to electrically connect the active region with the lower electrode. The method includes: forming a gate structure and an active region on a semiconductor substrate; forming an interlayer dielectric film on the resultant semiconductor substrate; forming a plug in the interlayer dielectric film to electrically connect with the active region; forming a mold oxidation layer on the plug and the interlayer dielectric film; patterning the mold oxidation layer with a predetermined pattern and forming a lower electrode of material containing aluminum on the plug; and sequentially forming a dielectric layer and an upper electrode on the lower electrode.

1 . A capacitor comprising: 
 a lower electrode formed of a metal containing aluminum;    a dielectric layer formed using a reaction gas containing oxygen on the lower electrode; and    an upper electrode formed on the dielectric layer.    
   
   
       2 . The capacitor of  claim 1 , wherein the lower electrode is formed of a material containing titanium aluminum nitride (TIAlN).  
   
   
       3 . The capacitor of  claim 1 , wherein the upper electrode is formed of a material containing ruthenium (Ru) or titanium (Ti).  
   
   
       4 . The capacitor of  claim 1 , wherein the dielectric layer is formed of a material containing LaO x  or HfO x  where x is between 0 and 3.  
   
   
       5 . A semiconductor device having a capacitor, the semiconductor device comprising: 
 a semiconductor substrate having a gate structure and an active region;    an interlayer dielectric film formed on the active region;    a lower electrode formed of a metal containing aluminum on the interlayer dielectric film;    a dielectric layer formed on the lower electrode;    an upper electrode formed on the dielectric layer; and    a plug formed in the interlayer dielectric film to electrically connect the active region with the lower electrode.    
   
   
       6 . The semiconductor device of  claim 5 , wherein the plug is formed of a material containing silicon.  
   
   
       7 . The semiconductor device of  claim 5 , wherein the lower electrode is formed of a material containing TiAlN.  
   
   
       8 . The semiconductor device of  claim 5 , wherein the dielectric layer comprises LaO x  or HfO x  where “x” is between 0 and 3.  
   
   
       9 . The semiconductor device of  claim 5 , wherein the upper electrode is formed of a material containing Ru or TiN.  
   
   
       10 - 15 . (canceled)  
   
   
       16 . A method of manufacturing a semiconductor device having a capacitor, the method comprising: 
 forming a gate structure and an active region on a semiconductor substrate;    forming an interlayer dielectric film on the resultant semiconductor substrate;    forming a plug in the interlayer dielectric film to electrically connect with the active region;    forming a mold oxidation layer on the plug and the interlayer dielectric film;    patterning the mold oxidation layer with a predetermined pattern, and then forming a lower electrode of material containing aluminum on the plug; and    sequentially forming a dielectric layer and an upper electrode on the lower electrode.    
   
   
       17 . The method of  claim 16 , wherein the lower electrode containing aluminum is formed of a material containing TaAlN.  
   
   
       18 . The method of  claim 16 , wherein the lower electrode containing aluminum is formed of a material containing TiAlN.  
   
   
       19 . The method of  claim 18 , wherein the forming of the lower electrode comprises: 
 flowing a mixture gas of material TiA 4  and aluminum ligand, trimethyl aluminum (Al[(CH 3 ) 3 ]), on the semiconductor substrate with the plug to form a TiAl layer while HA and CO 2  emit out in gas form; and    flowing NH 3  over the TiAl layer to form a TiAlN layer while HA emits out in gas form,    where “A” is a halogen element selected from the group consisting of fluorine (F), chorine (Cl), iodine (I) and bromine (Br).    
   
   
       20 . The method of  claim 16 , wherein the dielectric layer comprises LaO x  or HfO x  where x is between 0 and 3.  
   
   
       21 . The method of  claim 16 , wherein the plug is formed of a material containing silicon (Si).  
   
   
       22 . The method of  claim 16 , wherein the mold oxidation layer is SiO 2 .  
   
   
       23 . A method of manufacturing a semiconductor device having a capacitor, the method comprising: 
 forming a gate structure and a source and drain region on a semiconductor substrate;    forming an interlayer dielectric film on the resultant semiconductor substrate;    forming a plug in the interlayer dielectric film to electrically connect with the source and drain region;    forming a diffusion prevention film of material containing aluminum on the plug;    forming a mold oxidation layer on the diffusion prevention film and the interlayer dielectric film;    patterning the mold oxidation layer with a predetermined pattern and forming a lower electrode on the plug; and    sequentially forming a dielectric layer and an upper electrode on the lower electrode.    
   
   
       24 . The method of  claim 23 , wherein the diffusion prevention film containing aluminum is formed of a material containing TaAlN.  
   
   
       25 . The method of  claim 23 , wherein the diffusion prevention film containing aluminum is formed of a material containing TiAlN.  
   
   
       26 . The method of  claim 25 , wherein the forming of the diffusion prevention film comprises: 
 flowing a mixture gas of material TiA 4  and aluminum ligand, trimethyl aluminum (Al[(CH 3 ) 3 ]) on the semiconductor substrate with the plug to form a TiAl layer while HA and CO 2  emit out in gas form; and    flowing NH 3  over the TiAl layer to form a TiAlN layer while HA emits out in gas form,    where “A” is a halogen element selected from the group consisting of fluorine (F), chorine (Cl), iodine (I), and bromine (Br).    
   
   
       27 . The method of  claim 23 , wherein the dielectric layer comprises LaO x  or HfO x  where x is between 0 and 3.  
   
   
       28 . The method of  claim 23 , wherein the upper electrode is formed of a material containing Ru or TiN.  
   
   
       29 . The method of  claim 23 , wherein the mold oxidation layer comprises SiO 2 .  
   
   
       30 . The capacitor of  claim 1 , wherein the lower electrode is formed-of a material containing tantalum aluminum nitride (TaAlN.  
   
   
       31 . The semiconductor device of  claim 5 , wherein the lower electrode is formed of a material containing TaAlN.  
   
   
       32 . A semiconductor device having a capacitor, the semiconductor device comprising: 
 a semiconductor substrate having a gate structure and an active region;    an interlayer dielectric film formed on the active region;    a lower electrode formed on the interlayer dielectric film;    a dielectric layer formed on the lower electrode;    an upper electrode formed on the dielectric layer;    a plug formed in the interlayer dielectric film to connect the active region and the lower electrode; and    a diffusion prevention film formed of a metal containing aluminum on the plug, wherein the diffusion prevention film is formed of a material containing TaAlN.