Electronic device

Abstract

The electronic device comprises an inverter having a first and a second fieldeffect transistor with an active layer comprising a first organic semiconductor material of the first conductivity type and a second organic semiconductor material of the second conductivity type. The active layer can be provided from a solution, for instance in that it is a blend of two materials.

1 . Electronic device comprising an inverter unit with a first and a second field-effect transistor which each include a source and a drain electrode, which electrodes of the field-effect transistors are located in the same electrode layer of electrically conductive material and which pair of source and drain electrodes is interconnected by a first channel with an n-type conductivity and by a second channel with a p-type conductivity, which channels are located in one active layer which contains organic semi-conductor material and which is common to the first and the second transistor, each of the transistors comprising a gate electrode which is separated from the channels by a dielectric layer.  
     
     
         2 . Electronic device as claimed in  claim 1 , characterized in that a common gate electrode is present for the first and the second transistor.  
     
     
         3 . Electronic device as claimed in  claim 1 , characterized in that the drain electrodes of the first and the second transistor are common.  
     
     
         4 . Electronic device as claimed in  claim 3 , characterized in that the source and drain electrodes form an interdigitated electrode pair, in which the source electrodes are mutually protected by intermediate parts of the drain electrode.  
     
     
         5 . Electronic device as claimed in  claim 4 , characterized in that that the drain electrode comprises a body with a first side and a second side turned away from this first side, which body on the first and the second side has finger-like structures, the source electrode being located on the first side and together with the finger-like structure on this first side forming an interdigitated electrode pair and the drain electrode being located on the second side and together with the finger-like structure on this second side also forming an interdigitated electrode pair.  
     
     
         6 . Electronic device as claimed in  claim 1 , characterized in that the active layer contains a blend of an organic carrier material, the p-type semi-conductor material and the n-type semi-conductor material.  
     
     
         7 . Electronic device as claimed in  claim 1 , characterized in that that the source and drain electrode comprise a material chosen from the group of precious metals.  
     
     
         8 . Electronic device as claimed in  claim 1 , characterized in that the n- and p-type semi-conductor materials have a mobility μ n , μ p  with a mutual μ n :μ p  ratio in the range from 0.1 to 10.  
     
     
         9 . Method of manufacturing an electronic device comprising a inverter unit with a first and a second field-effect transistor with a common active layer containing a functionalized organic n-type semi-conductor material and a functionalized organic p-type semi-conductor material, which active layer is applied to a substrate from a solution.