US2006243305A1PendingUtilityA1

Spindle chuck cleaner

Assignee: MICRON TECHNOLOGY INCPriority: Aug 30, 2001Filed: Jul 17, 2006Published: Nov 2, 2006
Est. expiryAug 30, 2021(expired)· nominal 20-yr term from priority
H10P 72/0448H10P 72/0424H10P 72/0412H10P 72/0406H10P 72/78B08B 1/36B08B 5/04
52
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Claims

Abstract

Wafer holder cleaning devices, systems and methods that are capable of removing contaminants from a wafer holder. An embodiment includes a particle removal surface on the cleaning device. An embodiment of the surface is a brush. An embodiment includes moving the surface into contact with the wafer holder. An embodiment includes moving the surface into a close, non-contacting relationship to the wafer holder. An embodiment includes a vacuum removing the particles from the wafer holder. In an embodiment, the wafer holder is a spindle chuck. In an embodiment, the spindle chuck is in a fabrication station. In an embodiment, one of the cleaning device and wafer holder rotates.

Claims

exact text as granted — not AI-modified
1 . A method for cleaning a head adapted to releasably hold a wafer, comprising: 
 providing a cleaning surface;    moving the cleaning surface into contact with the head; and    removing contaminants from the head.    
   
   
       2 . The method of  1 , wherein moving the cleaning surface into contact with the head includes moving the cleaning surface into vertical alignment with the head.  
   
   
       3 . The method of  2 , wherein moving the cleaning surface into contact with the head includes moving the cleaning surface downwardly onto the head.  
   
   
       4 . The method of  claim 3 , wherein removing contaminants from the head includes rotating the cleaning surface on the head.  
   
   
       5 . The method of  claim 3 , wherein removing contaminants from the head includes rotating the head on the cleaning surface.  
   
   
       6 . The method of  claim 5 , wherein rotating the head includes rotating the head at a variable rpm.  
   
   
       7 . The method of  claim 5 , wherein rotating the head includes rotating the head at at least about 5,000 rpm.  
   
   
       8 . The method of  claim 5 , wherein rotating the head includes rotating the head at about 5,000 rpm.  
   
   
       9 . The method of  claim 6 , wherein rotating the head includes rotating the head at less than about 10,000 rpm.  
   
   
       10 . A method for cleaning a head adapted to releasably hold a wafer, comprising: 
 providing a cleaning surface;    removing a wafer from the head;    thereafter, moving the cleaning surface into contact with the head; and    removing contaminants from the head.    
   
   
       11 . The method of  10 , wherein moving the cleaning surface into contact with the head includes moving the cleaning surface into vertical alignment with the head.  
   
   
       12 . The method of  11 , wherein moving the cleaning surface into contact with the head includes moving the cleaning surface downwardly onto the head.  
   
   
       13 . The method of  claim 10 , wherein removing contaminants from the head includes rotating the cleaning surface on the head.  
   
   
       14 . The method of  claim 10 , wherein removing contaminants from the head includes rotating the head on the cleaning surface.  
   
   
       15 . Machine executable code stored on machine readable media, wherein the code comprises: 
 providing a cleaning surface;    moving the cleaning surface into contact with the head; and    removing contaminants from the head.    
   
   
       16 . The code of  15 , wherein moving the cleaning surface into contact with the head includes moving the cleaning surface into vertical alignment with the head.  
   
   
       17 . The code of  16 , wherein moving the cleaning surface into contact with the head includes moving the cleaning surface downwardly onto the head.  
   
   
       18 . The code of  claim 15 , wherein removing contaminants from the head includes rotating the cleaning surface on the head.  
   
   
       19 . The code of  claim 15 , wherein removing contaminants from the head includes rotating the head on the cleaning surface.  
   
   
       20 . The code of  claim 15 , wherein moving the cleaning surface into contact with the head is delayed until after removing a wafer from the head.  
   
   
       21 . The code of  claim 20 , wherein the delay is at least 5 seconds.  
   
   
       22 . A method of wafer processing, comprising: 
 placing a wafer on a head of a spindle chuck;    performing a fabrication process on the wafer;    removing the wafer from the head;    automatically cleaning contaminants from the head.    
   
   
       23 . The method of  claim 22 , wherein the recited steps are repeated.  
   
   
       24 . The method of  claim 22 , wherein placing a wafer, performing a fabrication process, and removing a wafer are performed a plurality of times before automatically cleaning contaminants from the head.  
   
   
       25 . The method of  claim 22 , wherein placing a wafer, performing a fabrication process, and removing a wafer are performed are performed on a batch of wafers before automatically cleaning contaminants from the head.  
   
   
       26 . A method of wafer processing, comprising: 
 placing a wafer on a head of a spindle chuck;    performing a fabrication process on the wafer;    removing the wafer from the head;    automatically cleaning contaminants from the head; and    returning the wafer to head.    
   
   
       27 . The method of  claim 26 , wherein the recited steps are repeated.  
   
   
       28 . The method of  claim 26 , wherein removing the wafer from the head, automatically cleaning contaminants from the head, and returning the wafer to head are performed after a plurality of wafers are subjected to the fabrication process.  
   
   
       29 . The method of  claim 27 , wherein removing the wafer from the head, automatically cleaning contaminants from the head, and returning the wafer to head are performed after a batch of wafers are subjected to the fabrication process.  
   
   
       30 . A method of wafer processing, comprising: 
 performing a fabrication process on a batch of wafers, wherein performing the fabrication process includes holding a last wafer in the batch on a spindle chuck and performing a fabrication process on the last wafer;    removing the last wafer from the spindle chuck; and    automatically cleaning the spindle chuck.    
   
   
       31 . The method of  claim 30 , further comprising setting a first wafer in a subsequent batch of wafers on the spindle chuck after both removing the last wafer from the spindle chuck and automatically cleaning engaging the spindle chuck with a cleaning head.  
   
   
       32 . The method of  claim 31 , wherein the performing a fabrication process and automatically cleaning the spindle chuck are repeated for the subsequent batch.  
   
   
       33 . A method for cleaning a support adapted to releasably hold a wafer, comprising: 
 providing a cleaning surface;    moving the cleaning surface into contact with the support; and    rotating the support on the cleaning surface.    
   
   
       34 . The method of  claim 33 , wherein rotating the support includes rotating the support at a variable rpm.  
   
   
       35 . The method of  claim 33 , wherein rotating the support includes rotating the support at at least about 5,000 rpm.  
   
   
       36 . The method of  claim 33 , wherein rotating the support includes rotating the support at about 5,000 rpm.  
   
   
       37 . The method of  claim 33 , wherein rotating the support includes rotating the support at less than about 10,000 rpm.  
   
   
       38 . The method of  claim 33 , wherein rotating the support includes activating a spin motor.  
   
   
       39 . A method for cleaning a support adapted to releasably hold a wafer, comprising: 
 providing a cleaning surface;    moving the cleaning surface into contact with the support; and    rotating the cleaning surface on the support.    
   
   
       40 . The method of  claim 39 , wherein rotating the cleaning surface includes rotating the support at a variable rpm.  
   
   
       41 . The method of  claim 39 , wherein rotating the cleaning surface includes rotating the support at at least about 5,000 rpm.  
   
   
       42 . The method of  claim 39 , wherein rotating the cleaning surface includes rotating the support at about 5,000 rpm.  
   
   
       43 . The method of  claim 39 , wherein rotating the cleaning surface includes rotating the support at less than about 10,000 rpm.  
   
   
       44 . The method of  claim 39 , wherein rotating the cleaning surface includes activating a spin motor.  
   
   
       45 . A method for cleaning a support adapted to releasably hold a wafer, comprising: 
 providing a cleaning surface;    removing a wafer from the support;    thereafter, positioning the cleaning surface adjacent the support; and    activating a vacuum source.    
   
   
       46 . The method of  claim 45 , wherein the activating a vacuum source further comprises generating a vacuum when the cleaning surface is adjacent the support.  
   
   
       47 . The method of  claim 45 , wherein the positioning the cleaning surface includes:  
     positioning the cleaning surface a set distance from the support; and  
     generating a vacuum when the cleaning surface is the set distance from the support.  
   
   
       48 . The method of  claim 47 , wherein the set distance is about 0.2 microns.  
   
   
       49 . The method of  claim 47 , wherein the set distance is less then about 0.2 microns.  
   
   
       50 . The method of  claim 45 , wherein the activating a vacuum source includes generating a vacuum when the cleaning surface is vertically aligned with the support.  
   
   
       51 . A method of wafer processing, comprising: 
 placing a wafer on a support of a spindle chuck;    performing a fabrication process on the wafer;    removing the wafer from the support;    automatically cleaning contaminants from the support.    
   
   
       52 . The method of  claim 51 , wherein the recited steps are repeated.  
   
   
       53 . The method of  claim 51 , wherein placing a wafer, performing a fabrication process, and removing a wafer are performed a plurality of times before automatically cleaning contaminants from the support.  
   
   
       54 . The method of  claim 51 , wherein placing a wafer, performing a fabrication process, and removing a wafer are performed on a batch of wafers before automatically cleaning contaminants from the support.  
   
   
       55 . The method of  claim 51 , wherein placing a wafer, performing a fabrication process, and removing a wafer are preformed on a plurality of batches of wafers before automatically cleaning contaminants from the support.  
   
   
       56 . A method of wafer processing, comprising: 
 placing a wafer on a support of a spindle chuck;    performing a fabrication process on the wafer;    removing the wafer from the support;    automatically cleaning contaminants from the support; and    returning the wafer to support.    
   
   
       57 . The method of  claim 56 , wherein the recited steps are repeated.  
   
   
       58 . The method of  claim 56 , wherein removing the wafer from the support, automatically cleaning contaminants from the support, and returning the wafer to support are performed after a plurality of wafers are subjected to the fabrication process.  
   
   
       59 . The method of  claim 56 , wherein removing the wafer from the support, automatically cleaning contaminants from the support, and returning the wafer to support are performed after a batch of wafers are subjected to the fabrication process.  
   
   
       60 . The method of  claim 56 , wherein removing the wafer from the support, automatically cleaning contaminants from the support, and returning the wafer to support are performed after a plurality of batches of wafers are subjected to the fabrication process.  
   
   
       61 . A method of wafer processing, comprising: 
 performing a fabrication process on a batch of wafers, wherein performing the fabrication process includes holding a last wafer in the batch on a spindle chuck and performing a fabrication process on the last wafer;    removing the last wafer from the spindle chuck; and    automatically cleaning the spindle chuck.    
   
   
       62 . The method of  claim 61 , further comprising setting a first wafer in a subsequent batch of wafers on the spindle chuck after both removing the last wafer from the spindle chuck and automatically cleaning the spindle chuck.  
   
   
       63 . The method of  claim 61 , wherein the performing a fabrication process and automatically cleaning the spindle chuck are repeated for the subsequent batch.  
   
   
       64 . The method of  claim 62 , wherein the recited steps are repeated.  
   
   
       65 . A method of wafer processing, comprising: 
 performing a fabrication process on a plurality of batches of wafers, wherein performing the fabrication process includes holding a last wafer in the last batch of a plurality of batches on a spindle chuck and performing a fabrication process on the last wafer;    removing the last wafer from the spindle chuck; and    automatically cleaning the spindle chuck.    
   
   
       66 . The method of  claim 65 , further comprising setting a first wafer in a subsequent plurality of batches of wafers on the spindle chuck after both removing the last wafer in the last batch of a plurality of batches from the spindle chuck and automatically cleaning the spindle chuck.  
   
   
       67 . The method of  claim 65 , wherein the performing a fabrication process and automatically cleaning the spindle chuck are repeated for the subsequent batch.  
   
   
       68 . The method of  claim 66 , wherein the recited steps are repeated.

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