US2006240188A1PendingUtilityA1

Chemical vapor deposition apparatus

51
Individually held — no corporate assignee on recordPriority: Nov 6, 2003Filed: Jun 20, 2006Published: Oct 26, 2006
Est. expiryNov 6, 2023(expired)· nominal 20-yr term from priority
Inventors:Jeff FussKevin HamerZhiping Yin
C23C 16/4405H01J 37/3244C23C 16/4404
51
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Claims

Abstract

This invention includes chemical vapor deposition apparatus, methods of chemical vapor depositing an amorphous carbon comprising layer on a substrate, and methods of chemical vapor depositing at least one of Si 3 N 4 and Si x O y N z on a substrate. In certain implementations, a gas output manifold having at least one gas output to a deposition chamber and at least three gas inputs is utilized. In certain implementations, a remote plasma generator is utilized. In certain implementations, at least one cleaning gas input line feeds the remote plasma generator. In certain implementations, the at least one cleaning gas input line includes an amorphous carbon cleaning gas input and an Si 3 N 4 or Si x O y N z cleaning gas input.

Claims

exact text as granted — not AI-modified
1 . A chemical vapor deposition apparatus comprising: 
 a deposition chamber configured to receive a substrate to be deposited upon;    a remote plasma generator;    a gas output manifold in fluid communication with the deposition chamber, the gas output manifold comprising at least one gas output to the deposition chamber and at least three gas inputs, the at least three gas inputs comprising: 
 a first gas input line fed by at least a nitrogen deposition precursor source line, a silicon deposition precursor source line, and an oxygen deposition precursor source line effective to deposit at least one of Si 3 N 4  and Si x O y N z  on a substrate received within the deposition chamber and over at least some deposition chamber internal surfaces;  
   a second gas input line fed by at least one carbon deposition precursor source line effective to deposit an amorphous carbon comprising material on a substrate received with the deposition chamber surface and over at least some deposition chamber internal surfaces; and 
 a third gas input line fed by the remote plasma generator; and  
 at least one cleaning gas input line feeding the remote plasma generator, the at least one cleaning gas input line comprising an amorphous carbon cleaning gas input and an Si 3 N 4  or Si x O y N z  cleaning gas input.  
   
   
   
       2 . The apparatus of  claim 1  further comprising at least one plasma generating electrode within the deposition chamber.  
   
   
       3 . The apparatus of  claim 1  wherein the gas output manifold has only one gas output.  
   
   
       4 . The apparatus of  claim 1  wherein the gas output manifold has only three gas inputs.  
   
   
       5 . The apparatus of  claim 1  wherein the gas output manifold has only one gas output and has only three gas inputs.  
   
   
       6 . The apparatus of  claim 1  wherein the gas output manifold is received externally of the deposition chamber.  
   
   
       7 . The apparatus of  claim 1  further comprising a gas showerhead received within the deposition chamber and to which the gas output manifold feeds.  
   
   
       8 . The apparatus of  claim 7  wherein the gas output manifold is received externally of the deposition chamber.  
   
   
       9 . The apparatus of  claim 1  comprising only one cleaning gas input line feeding the remote plasma generator.  
   
   
       10 . The apparatus of  claim 9  wherein the gas output manifold has only one gas output and has only three gas inputs.  
   
   
       11 . The apparatus of  claim 1  wherein the amorphous carbon cleaning gas input is configured for feeding oxygen as the amorphous carbon cleaning gas.  
   
   
       12 . The apparatus of  claim 1  wherein the Si 3 N 4  or Si x O y N z  cleaning gas input is configured for feeding NF 3  as the Si 3 N 4  or Si x O y N z  cleaning gas.  
   
   
       13 . The apparatus of  claim 1  wherein the amorphous carbon cleaning gas input is configured for feeding oxygen as the amorphous carbon cleaning gas, and the Si 3 N 4  or Si x O y N z  cleaning gas input is configured for feeding NF 3  as the Si 3 N 4  or Si x O y N z  cleaning gas.  
   
   
       14 . The apparatus of  claim 1  wherein the at least one carbon deposition precursor source line is configured for feeding a hydrocarbon as a carbon deposition precursor gas effective to deposit an amorphous carbon comprising layer which is transparent to visible light.  
   
   
       15 . The apparatus of  claim 1  wherein the oxygen deposition precursor source line is configured to feed N 2 O as an oxygen source gas, the nitrogen deposition precursor source line is configured to feed at least one of NH 3  and N 2  as a nitrogen source gas, and the silicon deposition precursor source line is configured to feed SiH 4  as a silicon source gas.  
   
   
       16 . The apparatus of  claim 15  wherein the at least one carbon deposition precursor source line is configured for feeding a hydrocarbon as a carbon deposition precursor gas effective to deposit an amorphous carbon comprising layer which is transparent to visible light.  
   
   
       17 . A chemical vapor deposition apparatus comprising: 
 a deposition chamber configured to receive a substrate to be deposited upon;    a remote plasma generator;    a gas output manifold in fluid communication with the deposition chamber, the gas output manifold comprising at least one gas output to the deposition chamber and at least three gas inputs, the at least three gas inputs comprising: 
 a first gas input line fed by at least a nitrogen deposition precursor source line, a silicon deposition precursor source line, an oxygen deposition precursor source line, and a first inert deposition process gas source line effective to deposit at least one of Si 3 N 4  and Si x O y N z  on a substrate received within the deposition chamber and over at least some deposition chamber internal surfaces, the first gas input line being fed by a second inert deposition process gas source line configured for a lower inert gas flow rate than said first inert deposition process gas source line is configured;  
   a second gas input line fed by at least one carbon deposition precursor source line operable with the second inert deposition process gas source line effective to deposit an amorphous carbon comprising material on a substrate received with the deposition chamber surface and over at least some deposition chamber internal surfaces; and    a third gas input line fed by the remote plasma generator; and    at least one cleaning gas input line feeding the remote plasma generator, the at least one cleaning gas input line comprising an amorphous carbon cleaning gas input and an Si 3 N 4  or Si x O y N z  cleaning gas input.    
   
   
       18 . The apparatus of  claim 17  wherein the second inert deposition process gas source line joins with the oxygen deposition precursor source line upstream of the first gas input line.  
   
   
       19 . The apparatus of  claim 17  wherein the second inert deposition process gas source line joins with the first inert deposition process gas source line upstream of the first gas input line.  
   
   
       20 . The apparatus of  claim 17  wherein, 
 the second inert deposition process gas source line joins with the oxygen deposition precursor source line upstream of the first gas input line; and    the second inert deposition process gas source line joins with the first inert deposition process gas source line upstream of the first gas input line.    
   
   
       21 . The apparatus of  claim 17  further comprising at least one plasma generating electrode within the deposition chamber.  
   
   
       22 . The apparatus of  claim 17  wherein the gas output manifold has only one gas output.  
   
   
       23 . The apparatus of  claim 17  wherein the gas output manifold has only three gas inputs.  
   
   
       24 . The apparatus of  claim 17  wherein the gas output manifold has only one gas output and has only three gas inputs.  
   
   
       25 . The apparatus of  claim 17  wherein the gas output manifold is received externally of the deposition chamber.  
   
   
       26 . The apparatus of  claim 17  further comprising a gas showerhead received within the deposition chamber and to which the gas output manifold feeds.  
   
   
       27 . The apparatus of  claim 26  wherein the gas output manifold is received externally of the deposition chamber.  
   
   
       28 . The apparatus  claim 17  comprising only one cleaning gas input line feeding the remote plasma generator.  
   
   
       29 . The apparatus of  claim 28  wherein the gas output manifold has only one gas output and has only three gas inputs.  
   
   
       30 . The apparatus of  claim 17  wherein the amorphous carbon cleaning gas input is configured for feeding oxygen as the amorphous carbon cleaning gas.  
   
   
       31 . The apparatus of  claim 17  wherein the Si 3 N 4  or Si x O y N z  cleaning gas input is configured for feeding NF 3  as the Si 3 N 4  or Si x O y N z  cleaning gas.  
   
   
       32 . The apparatus of  claim 17  wherein the amorphous carbon cleaning gas input is configured for feeding oxygen as the amorphous carbon cleaning gas, and the Si 3 N 4  or Si x O y N z  cleaning gas input is configured for feeding NF 3  as the Si 3 N 4  or Si x O y N z  cleaning gas.  
   
   
       33 . The apparatus of  claim 17  wherein the at least one carbon deposition precursor source line is configured for feeding a hydrocarbon as a carbon deposition precursor gas effective to deposit an amorphous carbon comprising layer which is transparent to visible light.  
   
   
       34 . The apparatus of  claim 17  wherein the oxygen deposition precursor source line is configured to feed N 2 O as an oxygen source gas, the nitrogen deposition precursor source line is configured to feed at least one of NH 3  and N 2  as a nitrogen source gas, and the silicon deposition precursor source line is configured to feed SiH 4  as a silicon source gas.  
   
   
       35 . The apparatus of  claim 34  wherein the at least one carbon deposition precursor source line is configured for feeding a hydrocarbon as a carbon deposition precursor gas effective to deposit an amorphous carbon comprising layer which is transparent to visible light.  
   
   
       36 - 97 . (canceled)

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