US2006237729A1PendingUtilityA1

Light emission from semiconductor integrated circuits

Individually held — no corporate assignee on recordPriority: Dec 28, 2000Filed: Mar 15, 2006Published: Oct 26, 2006

Est. expiryDec 28, 2020(expired)· nominal 20-yr term from priority

Inventors:Robert W. Bower

H10H 20/00H10N 99/00

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Claims

Abstract

Structures and methods to inject electrons into an insulator from a semiconductor layer that are then collected in a thin layer of a direct semiconductor material which in turn emits light by bandgap recombination.

Claims

exact text as granted — not AI-modified

1 . A multilayer light emitting device, comprising: 
 an electron emitting layer;    an insulating layer over the electron emitting layer; and    a light emitting layer over the insulating layer;    wherein electrons emitted from the electron emitting layer pass through the insulating layer and into the light emitting layer and are converted into bandgap radiation by the light emitting layer.    
   
   
       2 - 28 . (canceled)

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