Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites

Abstract

Macroelectronic substrate materials incorporating nanowires are described. These are used to provide underlying electronic elements (e.g., transistors and the like) for a variety of different applications. Methods for making the macroelectronic substrate materials are disclosed. One application is for transmission an reception of RF signals in small, lightweight sensors. Such sensors can be configured in a distributed sensor network to provide security monitoring. Furthermore, a method and apparatus for a radio frequency identification (RFID) tag is described. The RFID tag includes an antenna and a beam-steering array. The beam-steering array includes a plurality of tunable elements. A method and apparatus for an acoustic cancellation device and for an adjustable phase shifter that are enabled by nanowires are also described.

1 . A distributed sensor network, comprising: 
 a base station configured to manage the distributed sensor network; and    at least one sensor, said sensor coupled to said base station, said sensor comprising a thin film of nanowires.    
     
     
         2 . The distributed sensor network of  claim 1 , wherein said nanowires are aligned substantially parallel to their long axis.  
     
     
         3 . The distributed sensor network of  claim 1 , wherein said nanowires are randomly aligned.  
     
     
         4 . The distributed sensor network of  claim 1 , wherein said nanowires are coated with a dielectric material to thereby form a gate dielectric.  
     
     
         5 . The distributed sensor network of  claim 1 , wherein said nanowires have doped cores.  
     
     
         6 . The distributed sensor network of  claim 1 , wherein said nanowires have doped shells.  
     
     
         7 . The distributed sensor network of  claim 1 , wherein said nanowires have doped cores and shells.  
     
     
         8 . The distributed sensor network of  claim 1 , wherein said nanowires are N-doped.  
     
     
         9 . The distributed sensor network of  claim 1 , wherein said nanowires are P-doped.  
     
     
         10 . The distributed sensor network of  claim 1 , wherein said sensor comprises a flexible plastic substrate on which said thin film of nanowires is deposited.  
     
     
         11 . The distributed sensor network of  claim 1 , wherein said nanowires comprise silicon nanowires.  
     
     
         12 . The distributed sensor network of  claim 1 , further comprising a plurality of sensors coupled to said base station, wherein each sensor within said network comprises a thin film of nanowires.