Electronic component and method for its production

Abstract

An electronic component includes a semiconductor die which exhibits on its active top side above an active surface area a self-supporting electrically conductive cover layer which is supported by through lines and forms a hollow space to the active surface area. A method for producing the electronic component includes additional features.

1 . A method for producing a semiconductor wafer with semiconductor dies for electronic components, the method comprising: 
 providing a semiconductor wafer, arranged in rows and columns, with semiconductor die positions,    creating an active surface area in the semiconductor die positions on an active top side of the semiconductor wafer and applying contact connecting areas outside the active surface area,    applying and patterning a sacrificial layer which comprises insulation material, on the active surface area, leaving through openings in the sacrificial layer exposed in the edge areas of the active surface area,    applying a conductive material to the sacrificial layer and into the through openings for forming a cover layer with through lines,    removing the sacrificial layer by forming a self-supporting cover layer, supported by through lines, above a hollow space above the active surface area,    applying and patterning a first plastic layer on the cover layer and on the active top side, leaving the contact connecting areas exposed and sealing side edges of the hollow space above the active surface area,    applying external contacts to the contact connecting areas, and    splitting the semiconductor wafer into individual electronic components.    
     
     
         2 . The method as claimed in  claim 1 , wherein the sacrificial layer is deposited on the semiconductor wafer from a chemical gas phase, forming silicon oxide or silicon nitride, or as a photoresist layer on the semiconductor wafer.  
     
     
         3 . The method as claimed in  claim 1 , wherein, after a cover layer comprising a polycrystalline silicon has been applied, a sacrificial layer comprising silicon oxide is removed by hydrofluoric acid.  
     
     
         4 . The method as claimed in  claim 1 , wherein, after a metallic cover layer of nickel, copper, aluminum or alloys thereof has been applied, a sacrificial layer comprising photoresist is removed by a solvent.  
     
     
         5 . The method as claimed in  claim 4 , wherein, onto the first plastic layer a rewiring pattern is applied which connects the contact connecting areas to external contact areas and then a second plastic layer is applied, leaving the external contact areas exposed.  
     
     
         6 . The method as claimed in  claim 1 , wherein, onto the first plastic layer a rewiring pattern is applied which connects the contact connecting areas to external contact areas and then a second plastic layer is applied, leaving the external contact areas exposed.  
     
     
         7 - 20 . (canceled)