Methods of forming materials comprising tungsten and nitrogen, and methods of forming capacitors

Abstract

In one aspect, the invention includes a method of forming a material comprising tungsten and nitrogen, comprising: a) providing a substrate; b) depositing a layer comprising tungsten and nitrogen over the substrate; and c) in a separate step from the depositing, exposing the layer comprising tungsten and nitrogen to a nitrogen-containing plasma. In another aspect, the invention includes a method of forming a capacitor, comprising: a) forming a first electrical node; b) forming a dielectric layer over the first electrical node; c) forming a second electrical node; and d) providing a layer comprising tungsten and nitrogen between the dielectric layer and one of the electrical nodes, the providing comprising; i) depositing a layer comprising tungsten and nitrogen; and ii) in a separate step from the depositing, exposing the layer comprising tungsten and nitrogen to a nitrogen-containing plasma.

1 - 48 . (canceled)  
   
   
       49 . A tungsten/nitrogen-containing material forming method comprising: 
 depositing a first layer comprising tungsten and nitrogen over a substrate, the first layer being substantially free of defects;    ceasing the depositing, exposing the substantially defect-free first layer to a nitrogen-containing plasma, and densifying the first layer in comparison to the substantially defect-free first layer; and    after the densifying, forming a second layer comprising tungsten and nitrogen over the densified first layer.    
   
   
       50 . The method of  claim 49  wherein the first layer deposition uses a plasma, a tungsten precursor, and a nitrogen-containing gas and the ceasing, exposing, and densifying together comprise stopping introduction of the tungsten precursor, but maintaining the plasma and continuing to supply the nitrogen-containing gas.  
   
   
       51 . The method of  claim 50  wherein plasma settings and nitrogen-containing gas flow rate used for the first layer deposition are not changed during the maintaining the plasma and the continuing to supply the nitrogen-containing gas.  
   
   
       52 . The method of  claim 49  wherein the first layer deposition and the stabilizing occur in the same deposition chamber.  
   
   
       53 . The method of  claim 49  further comprising subjecting at least the densified first layer to anneal conditions without incurring defect formation.  
   
   
       54 . The method of  claim 49  wherein the first layer has a thickness of less than about 2,000 Å and the exposing and curing in combination occur for a time of from about 10 to about 80 seconds using a temperature of from about 170 to about 550° C., a pressure of from about 500 mTorr to about 8 Torr, a N 2  or NH 3  flow rate of from about 50 to about 800 sccm, and a plasma power of from about 100 to about 800 watts.  
   
   
       55 . The method of  claim 49  wherein the substrate comprises at least one of Ta 2 O 5  and BST as a dielectric material having a “K” greater than or equal to 8.  
   
   
       56 . The method of  claim 49  wherein the second layer is deposited on the first layer.  
   
   
       57 . A tungsten/nitrogen-containing device forming method comprising: 
 forming a first electrical node of a capacitor;    forming a dielectric layer over the first electrical node;    forming a second electrical node of the capacitor separated from the first electrical node by the dielectric layer; and    at least one of the first and second electrical nodes comprising a tungsten/nitrogen-containing material formed at least by:    depositing a first layer comprising tungsten and nitrogen, the first layer being substantially free of defects;    ceasing the depositing, exposing the substantially defect-free first layer to a nitrogen-containing plasma, and densifying the first layer in comparison to the substantially defect-free first layer; and    after the densifying, forming a second layer comprising tungsten and nitrogen over the densified first layer.    
   
   
       58 . The method of  claim 57  wherein the depositing comprises plasma-enhanced CVD utilizing WF 6  and a nitrogen precursor, and wherein the exposing and densifying together comprise ceasing the flow of WF 6 .  
   
   
       59 . The method of  claim 57  wherein the nitrogen-containing plasma is formed from a nitrogen-containing compound that does not comprise oxygen.  
   
   
       60 . The method of  claim 57  wherein the nitrogen-containing plasma is formed from at least one of N 2  and NH 3.