US2006231940A1PendingUtilityA1

High density direct connect LOC assembly

Individually held — no corporate assignee on recordPriority: Feb 20, 1998Filed: Jun 15, 2006Published: Oct 19, 2006
Est. expiryFeb 20, 2018(expired)· nominal 20-yr term from priority
Inventors:Trung Doan
H10W 90/756H10W 72/9445H10W 72/951H10W 72/941H10W 72/932H10W 72/075H10W 72/59H10W 70/655H10W 72/00H10W 70/415H10W 20/49H10W 20/40
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Claims

Abstract

An apparatus and method for attaching a semiconductor die to a lead frame wherein the electric contact points of the semiconductor die are relocated to the periphery of the semiconductor die through a plurality of conductive traces. A plurality of leads extends from the lead frame over the conductive traces proximate the semiconductor die periphery and directly attaches to and makes electrical contact with the conductive traces in a LOC arrangement. Alternately, a connector may contact a portion of the conductive trace to make contact therewith.

Claims

exact text as granted — not AI-modified
1 . An assembly comprising: 
 a semiconductor die having a periphery and an active surface having a plurality of electric contact points disposed on the active surface; and    a plurality of conductive traces on the active surface, each conductive trace of the plurality of conductive traces comprising a first end electrically contacting at least one electric contact point of the plurality of electric contact points and a second end terminating proximate the semiconductor die periphery, each conductive trace comprising a trace of extruded conductive material on the active surface between the at least one semiconductor die electric contact point making contact therewith and the periphery of the semiconductor die.    
     
     
         2 . The assembly of  claim 1 , further comprising a plurality of leads of a lead frame resiliently connected to and in electrical communication with portions of the second ends of the plurality of conductive traces.  
     
     
         3 . The assembly of  claim 1 , wherein the semiconductor die comprises one semiconductor die of a plurality of semiconductor dice on a wafer.  
     
     
         4 . A plurality of semiconductor dice on a wafer, comprising: 
 a plurality of semiconductor dice located on the wafer, each semiconductor die having a periphery and an active surface with at least one electric contact point disposed on the active surface; and    at least one conductive trace on the active surface, the at least one conductive trace comprising a first end electrically contacting the at least one semiconductor die electric contact point and a second end terminating proximate the semiconductor die periphery, the at least one conductive trace comprising a trace of extruded conductive material on the active surface between the at least one electric contact point making contact therewith and the periphery of the semiconductor die to expose a portion of the at least one conductive trace at a portion of the periphery of the semiconductor die.

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