Light emitting diode element

Abstract

A light emitting diode element having a light emitting diode sealed by glass, wherein the glass consists essentially of, as represented by mol % based on the following oxides, from 30 to 70% of SnO, from 15 to 50% of P 2 O 5 , from 0.1 to 20% of ZnO, from 0 to 10% of SiO 2 +GeO 2 , from 0 to 30% of Li 2 O+Na 2 O+K 2 O, and from 0 to 20% of MgO+CaO+SrO+BaO. Glass for covering a light emitting diode element, which has an internal transmittance of at least 80% with thickness of 1 mm for a light having a wavelength of 405. nm and which consists essentially of, as represented by mol % based on the following oxides, from 40 to 53% of TeO 2 , from 0 to 10% of GeO 2 , from 5 to 30% of B 2 O 3 , from 0 to 10% of Ga 2 O 3 , from 0 to 10% of Bi 2 O 3 , from 3 to 20% of ZnO, from 0 to 3% of Y 2 O 3 , from 0 to 3% of La 2 O 3 , from 0 to 7% of Gd 2 O 3 and from 0 to 5% of Ta 2 O 5 , and TeO 2 +B 2 O 3 is at most 75 mol %.

1 . A light emitting diode element having a light emitting diode sealed by glass, wherein the glass consists essentially of, as represented by mol % based on the following oxides, from 30 to 70% of SnO, from 15 to 50% of P 2 O 5 , from 0.1 to 20% of ZnO, from 0 to 10% of SiO 2 +GeO 2 , from 0 to 30% of Li 2 O+Na 2 O+K 2 O, and from 0 to 20% of MgO+CaO+SrO+BaO.  
   
   
       2 . A light emitting diode element having a light emitting diode sealed by glass, wherein the glass consists essentially of, as represented by mol % based on the following oxides, from 20 to 55% of B 2 O 3 , from 1 to 20% of Bi 2 O 3 , from 0 to 30% of ZnO, from 0 to 20% of SiO 2 +GeO 2 , from 0 to 30% of Li 2 O+Na 2 O+K 2 O, and from 0 to 30% of MgO+CaO+SrO+BaO.  
   
   
       3 . A light emitting diode element having a light emitting diode sealed by glass, wherein the glass consists essentially of, as represented by mol % based on the following oxides, from 20 to 70% of TeO 2 , from 3 to 30% of ZnO, from 0 to 55% of B 2 O 3 , from 0 to 10% of SiO 2 +GeO 2 , from 0 to 30% of Li 2 O+Na 2 O+K 2 O, and from 0 to 20% of MgO+CaO+SrO+BaO.  
   
   
       4 . The light emitting diode element according to  claim 3 , wherein ZnO is from 5 to 30 mol %.  
   
   
       5 . The light emitting diode element according to  claim 1 , wherein the glass has a refractive index of at least 1.6 at a wavelength of 400 nm.  
   
   
       6 . The light emitting diode element according to  claim 2 , wherein the glass has a refractive index of at least 1.6 at a wavelength of 400 nm.  
   
   
       7 . The light emitting diode element according to  claim 3 , wherein the glass has a refractive index of at least 1.6 at a wavelength of 400 nm.  
   
   
       8 . The light emitting diode element according to  claim 1 , wherein the glass has a refractive index of at least 1.7 at a wavelength of 633 nm.  
   
   
       9 . The light emitting diode element according to  claim 2 , wherein the glass has a refractive index of at least 1.7 at a wavelength of 633 nm.  
   
   
       10 . The light emitting diode element according to  claim 3 , wherein the glass has a refractive index of at least 1.7 at a wavelength of 633 nm.  
   
   
       11 . The light emitting diode element according to  claim 1 , wherein the glass has an average linear expansion coefficient of from 75×10 −7  to 140×10 −7 /° C. within a range of from 50 to 300° C.  
   
   
       12 . The light emitting diode element according to  claim 2 , wherein the glass has an average linear expansion coefficient of from 75×10 −7  to 140×10 −7 /° C. within a range of from 50 to 300° C.  
   
   
       13 . The light emitting diode element according to  claim 3 , wherein the glass has an average linear expansion coefficient of from 75×10 −7  to 140×10 −7 /° C. within a range of from 50 to 300° C.  
   
   
       14 . The light emitting diode element according to  claim 1 , wherein the glass has a crystallization temperature of higher than 400° C.  
   
   
       15 . The light emitting diode element according to  claim 2 , wherein the glass has a crystallization temperature of higher than 400° C.  
   
   
       16 . The light emitting diode element according to  claim 3 , wherein the glass has a crystallization temperature of higher than 400° C.  
   
   
       17 . A light emitting diode element having a substrate having an average linear expansion coefficient of from 70×10 −7  to 90×10 −7 /° C. within a range of from 50 to 300° C., wherein the substrate is covered with glass which has a softening point of at most 500° C., an average linear expansion coefficient of from 65×10 −7  to 95×10 −7 /° C. within a range of from 50 to 300° C., an internal transmittance of at least 80% with a thickness of 1 mm for a light having a wavelength of 405 nm and a refractive index of at least 2.0 for the same light.  
   
   
       18 . The light emitting diode element according to  claim 17 , wherein the glass contains no PbO.  
   
   
       19 . A light emitting diode element having a substrate having an average linear expansion coefficient of from 70×10 −7  to 90×10 −7 /° C. within a range of from 50 to 300° C., wherein the substrate is covered with glass which has a softening point of at most 500° C., an average linear expansion coefficient of from 65×10 −7  to 95×10 −7 /° C. within a range of from 50 to 300° C., an internal transmittance of at least 80% with a thickness of 1 mm for a light having a wavelength of 405 nm and a refractive index of at least 1.7 for the same light and which contains no PbO.  
   
   
       20 . The light emitting diode element according to  claim 17 , wherein the substrate is a sapphire substrate.  
   
   
       21 . The light emitting diode element according to  claim 19 , wherein the substrate is a sapphire substrate.  
   
   
       22 . The light emitting diode element according to  claim 17 , wherein the glass is a TeO 2 −B 2 O 3 —ZnO glass, which contains TeO 2  in an amount of from 40 to 53 mol %.  
   
   
       23 . The light emitting diode element according to  claim 19 , wherein the glass is a TeO 2 −B 2 O 3 —ZnO glass, which contains TeO 2  in an amount of from 40 to 53 mol %.  
   
   
       24 . The light emitting diode element according to  claim 22 , wherein the glass consists essentially of, as represented by mol % based on the following oxides, from 42 to 58% of TeO 2 +GeO 2 , from 15 to 35% of B 2 O 3 +Ga 2 O 3 +Bi 2 O 3 , from 3 to 20% of ZnO and from 1 to 15% of Y 2 O 3 +La 2 O 3 +Gd 2 O 3 +Ta 2 O 5 , and TeO 2 +B 2 O 3  is at most 75 mol %.  
   
   
       25 . The light emitting diode element according to  claim 23 , wherein the glass consists essentially of, as represented by mol % based on the following oxides, from 42 to 58% of TeO 2 +GeO 2 , from 15 to 35% of B 2 O 3 +Ga 2 O 3 +Bi 2 O 3 , from 3 to 20% of ZnO and from 1 to 15% of Y 2 O 3 +La 2 O 3 +Gd 2 O 3 +Ta 2 O 5 , and TeO 2 +B 2 O 3  is at most 75 mol %.  
   
   
       26 . The light emitting diode element according to Claim  17 , wherein the glass consists essentially of, as represented by mol % based on the following oxides, from 40 to 53% of TeO 2 , from 0 to 10% of GeO 2 , from 5 to 30% of B 2 O 3 , from 0 to 10% of Ga 2 O 3 , from 0 to 10% of Bi 2 O 3 , from 3 to 20% of ZnO, from 0 to 3% of Y 2 O 3 , from 0 to 3% of La 2 O 3 , from 0 to 7% of Gd 2 O 3  and from 0 to 5% of Ta 2 O 5 , and TeO 2 +B 2 O 3  is at most 75 mol %.  
   
   
       27 . The light emitting diode element according to  claim 19 , wherein the glass consists essentially of, as represented by mol % based on the following oxides, from 40 to 53% of TeO 2 , from 0 to 10% of GeO 2 , from 5 to 30% of B 2 O 3 , from 0 to 10% of Ga 2 O 3 , from 0 to 10% of Bi 2 O 3 , from 3 to 20% of ZnO, from 0 to 3% of Y 2 O 3 , from 0 to 3% of La 2 O 3 , from 0 to 7% of Gd 2 O 3  and from 0 to 5% of Ta 2 O 5 , and TeO 2 +B 2 O 3  is at most 75 mol %.  
   
   
       28 . Glass for covering a light emitting diode element, which has an internal transmittance of at least 80% with thickness of 1 mm for a light having a wavelength of 405 nm and which consists essentially of, as represented by mol % based on the following oxides, from 40 to 53% of TeO 2 , from 0 to 10% of GeO 2 , from 5 to 30% of B 2 O 3 , from 0 to 10% of Ga 2 O 3 , from 0 to 10% of Bi 2 O 3 , from 3 to 20% of ZnO, from 0 to 3% of Y 2 O 3 , from 0 to 3% of La 2 O 3 , from 0 to 7% of Gd 2 O 3  and from 0 to 5% of Ta 2 O5, and TeO 2 +B 2 O 3  is at most 75 mol %.  
   
   
       29 . The glass for covering a light emitting diode element according to  claim 28 , which comprises from 42 to 58% of TeO 2 +GeO 2 , from 15 to 35% of B 2 O 3 +Ga 2 O 3 +Bi 2 O 3 , from 3 to 20% of ZnO and from 1 to 15% of Y 2 O 3 +La 2 O 3 +Gd 2 O 3 +Ta 2 O 5 .  
   
   
       30 . The glass for covering a-light emitting diode element according to  claim 28 , which contains no PbO.  
   
   
       31 . The glass for covering a light emitting diode element according to  claim 28 , which has a softening. point of at most 500° C., an average linear expansion coefficient of from 65×10 −7  to 95×10 −7 /° C. within a range of from 50 to 300° C. and a refractive index of at least 1.7 for a light having a wavelength of 405 nm.  
   
   
       32 . The glass for covering a light emitting diode element according to  claim 31 , wherein the refractive index is at least 2.0.