Plating apparatus, plating method, and method for manufacturing semiconductor device

Abstract

A plating apparatus according to the present invention is provided with a plating tank 100 in which an anode electrode 5 is provided, the plating apparatus performing the plating by (i) streaming a plating solution and an electrolytic liquid into the plating tank 100, (ii) emitting a jet of the plating solution to the plating-target face W of the semiconductor wafer 1 from the underneath of the semiconductor wafer 1, and (iii) streaming the electrolytic liquid to the anode electrode 5 while electrically conducting between the semiconductor wafer 1 and the anode electrode 5, the plating tank including a partition in between the semiconductor wafer 1 and the anode electrode 5, and the partition (i) separating the semiconductor wafer 1 and the anode electrode 5 and (ii) dividing the plating tank 100 into a plating-target substrate room and an anode electrode room. Thus, in a face-down type fountain plating apparatus, the plating quality would not be degraded by micro foreign solid particles originated from, for example, a black film while maintaining the operability of the apparatus.

1 . A plating apparatus for plating a plating-target face of a plating-target substrate, the plating apparatus comprising: 
 a plating tank in which an anode electrode is provided,    the plating apparatus performing the plating by (i) streaming a plating solution and an electrolytic liquid into the plating tank, (ii) emitting a jet of the plating solution to the plating-target face of the plating-target substrate from an underneath of the plating-target substrate, and (iii) streaming the electrolytic liquid to the anode electrode provided in the plating tank while electrically conducting between the plating-target substrate and the anode electrode,    the plating tank including a partition in between the plating-target substrate and the anode electrode, and    the partition (i) separating the plating-target substrate and the anode electrode and (ii) dividing the plating tank into a plating-target substrate room and an anode electrode room.    
   
   
       2 . A plating apparatus as set forth in  claim 1 , further comprising: 
 a plating solution jet tube for emitting a jet of the plating solution to the plating-target face of the plating-target substrate,    the plating solution jet tube being provided in such a way that (i) the plating solution jet tube passes through the partition and (ii) the plating solution streams only into the plating-target substrate room.    
   
   
       3 . A plating apparatus as set forth in  claim 1 , further comprising an electrolytic liquid supply tube for streaming the electrolytic liquid only into the anode electrode room.  
   
   
       4 . A plating apparatus as set forth in  claim 1 , wherein the electrolytic liquid streaming into the anode electrode room does not reach the plating-target substrate room.  
   
   
       5 . A plating apparatus as set forth in  claim 1 , further having an electrolytic liquid outlet opening for draining the electrolytic liquid out of the plating tank, the electrolytic liquid having streamed into the anode electrode room,.  
   
   
       6 . A plating apparatus as set forth in  claim 1 , having a partitioning portion including the partition and separating the anode electrode and the plating-target substrate in the plating tank, a part or a whole of the partitioning portion being made of a permeable member that, when being soaked in the electrolytic liquid, is permeable to an ion of the electrolytic liquid.  
   
   
       7 . A plating apparatus as set forth in  claim 6 , wherein the permeable member is a semipermeable membrane.  
   
   
       8 . A plating apparatus as set forth in  claim 6 , wherein the permeable member contains ion exchange resin.  
   
   
       9 . A plating apparatus as set forth in  claim 1 , further comprising a plating-target substrate room closing means for closing the plating-target substrate room.  
   
   
       10 . A plating apparatus as set forth in  claim 1 , further comprising: 
 a plating solution supply source that stores plating solution to be supplied to the plating-target substrate room;    a plating solution system for circulating the plating solution between the plating solution supply source and the plating-target substrate room;    an electrolytic liquid supply source that stores electrolytic liquid to be supplied to the anode electrode room; and    an electrolytic liquid system for circulating the electrolytic liquid between the electrolytic liquid supply source and the anode electrode room.    
   
   
       11 . A plating apparatus as set forth in  claim 10 , further comprising a replenishing liquid system for (i) monitoring a concentration of plating solution circulating within the plating solution system and (ii) replenishing a replenishing liquid based upon concentration information of the plating solution.  
   
   
       12 . A plating apparatus as set forth in  claim 10 , wherein each of the plating solution system and the electrolytic liquid system is a closed system.  
   
   
       13 . A plating apparatus as set forth in  claim 1 , wherein the plating solution is a conductive liquid containing copper.  
   
   
       14 . A plating apparatus as set forth in  claim 13 , wherein the proportion of the copper in 1 L of the plating solution is 14 g to 40 g, inclusive.  
   
   
       15 . A plating apparatus as set forth in  claim 1 , wherein the anode electrode is a dissoluble anode electrode made of copper mixed with phosphorus.  
   
   
       16 . A plating apparatus as set forth in  claim 1 , wherein the electrolytic liquid is (i) sulfuric acid or (ii) an aqueous solution in which sulfuric acid is diluted.  
   
   
       17 . A plating apparatus as set forth in  claim 1 , wherein the electrolytic liquid is a conductive liquid containing copper.  
   
   
       18 . A plating apparatus as set forth in  claim 17 , wherein the proportion of the copper in 1 L of the electrolytic liquid is 14 g to 40 g, inclusive.  
   
   
       19 . A plating apparatus as set forth in  claim 1 , wherein the plating-target substrate is a semiconductor wafer.  
   
   
       20 . A plating method for plating a plating-target face of a plating-target substrate, the plating method comprising the plating steps of: 
 (i) streaming a plating solution and an electrolytic liquid into a plating tank, (ii) emitting a jet of the plating solution to a plating-target face of a plating-target substrate from an underneath of the plating-target substrate, and (iii) streaming the electrolytic liquid to an anode electrode provided in the plating tank while electrically conducting between the plating-target substrate and the anode electrode; and    plating the plating-target substrate in the plating tank in which a plating-target substrate and an anode electrode are separated by a partition so as to divide the plating tank into a plating-target substrate room and an anode electrode room.    
   
   
       21 . A plating method as set forth in  claim 20 , comprising the plating step performed in such a way that the electrolytic liquid streamed into the anode electrode room does not reach the plating-target substrate room.  
   
   
       22 . A plating method as set forth in  claim 20 , further comprising the step of draining the electrolytic liquid out of the plating tank, the electrolytic liquid having streamed into the anode electrode room,.  
   
   
       23 . A plating method as set forth in  claim 20 , wherein: 
 the partition that separates the anode electrode and the plating-target substrate, includes a permeable member that, when being soaked in the electrolytic liquid, is permeable to an ion contained in an electrolytic liquid.    
   
   
       24 . A plating method as set forth in  claim 20 , further comprising the step of closing the plating-target substrate room.  
   
   
       25 . A plating method as set forth in  claim 20 , further comprising the steps of: 
 circulating the plating solution between (i) the plating solution supply source that stores the plating solution and (ii) the plating-target substrate room; and    circulating the electrolytic liquid between (i) the electrolytic liquid supply source that stores the electrolytic liquid and (ii) the anode electrode room.    
   
   
       26 . A plating method as set forth in  claim 25 , wherein the step of circulating the plating solution includes the steps of: 
 (i) monitoring a concentration of the plating solution; and    (ii) replenishing a replenishing liquid based upon concentration information of the plating solution.    
   
   
       27 . A method for manufacturing a semiconductor device, the method comprising the plating method set forth in  claim 20  as its plating step.  
   
   
       28 . The method as set forth in  claim 27 , 
 further comprising, prior to the plating step, the steps of:    forming a seed layer on a plating-target face of the plating-target substrate;    applying a photoresist on a surface of the seed layer formed in the step of forming a seed layer; and    forming a pattern by exposing and developing the photoresist.