US2006225643A1PendingUtilityA1

AlGaN substrate and production method thereof

Assignee: SHOWA DENKO KKPriority: Mar 28, 2005Filed: Mar 28, 2006Published: Oct 12, 2006

Est. expiryMar 28, 2025(expired)· nominal 20-yr term from priority

Inventors:Hiroshi Amano Akira Bando

H10P 14/3416H10P 14/2921H10P 14/2901H10P 14/24C30B 25/02H10H 20/0137C30B 29/403C03B 25/02Y10S117/915

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Claims

Abstract

A substrate is formed of Al x Ga 1-x N, wherein 0<x≦1. The substrate is a single crystal and is used producing a Group III nitride semiconductor device. A method for producing a substrate of Al x Ga 1-x N, wherein 0<x≦1, includes the steps of forming a layer of Al x Ga 1-x N, wherein 0<x≦1, on a base material and removing the base material. The method adopts the MOCVD method using a raw material molar ratio of a Group V element to Group III element that is 1000 or less, a temperature of 1200° C. or more for forming the layer of Al x Ga 1-x N, wherein 0<x≦1. The base material is formed of one member selected from the group consisting of sapphire, SiC, Si, ZnO and Ga 2 O 3 . The substrate is used for fabricating a Group II nitride semiconductor device.

Claims

exact text as granted — not AI-modified

1 . A substrate comprising Al x Ga 1-x N, wherein 0&lt;x≦1.  
   
   
       2 . A substrate according to  claim 1 , wherein it is formed of a single crystal.  
   
   
       3 . A substrate according to  claim 1  or  2 , herein it is for use in producing a Group III nitride semiconductor device.  
   
   
       4 . A method for producing a substrate of Al x Ga 1-x N, wherein 0&lt;x≦1, comprising the steps of forming a layer of Al x Ga 1-x N, wherein 0&lt;x≦1, on a base material and removing the base material.  
   
   
       5 . A method according to  claim 4 , wherein the step of forming a layer of Al x Ga 1-x N, wherein 0&lt;x≦1, is performed by the MOCVD method.  
   
   
       6 . A method according to  claim 5  wherein the MOCVD method adopts a speed of growth of 5 μm/hour for forming the layer of Al x Ga 1-x N, wherein 0&lt;x≦1.  
   
   
       7 . A method according to  claim 5  or  6 , wherein the MOCVD method adopts a raw material molar ratio of a Group V element to Group III element that is 1000 or less for forming the layer of Al x Ga 1-x N, wherein 0&lt;x≦1.  
   
   
       8 . A method according to  claim 5  or  6 , wherein the MOCVD method adopts a temperature of 1200° C. or more for forming the layer of Al x Ga 1-x N, wherein 0&lt;x≦1.  
   
   
       9 . A method according to  claim 7 , wherein the MOCVD method adopts a temperature of 1200° C. or more for forming the layer of Al x Ga 1-x N, wherein 0&lt;x≦1.  
   
   
       10 . A method according to  claim 4 , wherein the base material is formed of one member selected from the group consisting of sapphire, SiC, Si, ZnO and Ga 2 O 3 .  
   
   
       11 . A Group III nitride semiconductor device using the substrate according to  claim 1  or  2 .  
   
   
       12 . A Group III nitride semiconductor device using the substrate according to  claim 3.

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