Apparatus for manufacturing a semiconductor device and method of forming the same

Abstract

An apparatus for manufacturing a semiconductor includes a polyhedral transfer chamber, a first process module for forming a gate dielectric layer by ALD, and a second process module for thermally treating the gate dielectric layer. The first process module is in communication with a first side of the transfer chamber. The second process module in communication with a second side of the transfer chamber. The apparatus further includes at least one load-lock chamber in communication with a third side of the transfer chamber.

1 . A method for forming a gate electrode comprising: 
 loading a substrate into a clustered apparatus;    forming a gate dielectric layer on the substrate using an ALD method in the clustered apparatus;    thermally treating the substrate having the gate dielectric layer formed thereon to densify the gate dielectric layer in the clustered apparatus; and    forming a first gate electrode on the thermally treated gate oxide layer in the clustered apparatus.    
   
   
       2 . The method of  claim 1 , further comprising removing any native oxide layer formed on the substrate before forming the gate dielectric layer.  
   
   
       3 . The method of  claim 1 , wherein the forming the gate dielectric layer, thermally treating the substrate, and forming the first gate electrode are performed in situ and continuously under vacuum.  
   
   
       4 . The method of  claim 1 , wherein thermally treating the substrate is performed at a temperature of from about 500° C. to about 1,100° C.  
   
   
       5 . The method of  claim 1 , wherein any native oxide layer is removed using hydrogen fluoride.  
   
   
       6 . The method of  claim 1 , wherein forming the first electrode comprises performing ALD, further comprising forming a second gate electrode on the first gate electrode using CVD.  
   
   
       7 . The method of  claim 1 , wherein forming the first gate electrode is formed under vacuum.  
   
   
       8 . A method for forming a contact electrode comprising: 
 loading a substrate having a lower structure into a single-substrate type clustered apparatus;    removing a native oxide layer formed on the substrate; and    forming a contact electrode on the substrate.    
   
   
       9 . The method of  claim 8 , wherein the native oxide layer is removed using hydrogen fluoride.  
   
   
       10 . The method of  claim 8 , wherein the apparatus is structured such that forming a gate dielectric layer by ALD, thermally treating the gate dielectric layer, and forming the first gate electrode are performed continuously under vacuum.