Semiconductor manufacturing apparatus and semiconductor device manufacturing method

Abstract

A semiconductor manufacturing apparatus includes a processing apparatus main body which executes a process related to manufacturing a semiconductor device, an internal apparatus controller which supplies a start signal to start a process and a stop signal to stop the process of the semiconductor device within the processing apparatus main body, and a process controller which calculates a physical characteristic of the semiconductor device currently being processed and sends the stop signal to the apparatus controller when a calculated value reaches a predetermined value.

1 . A semiconductor manufacturing apparatus comprising: 
 a processing apparatus main body which executes a process related to manufacturing of a semiconductor device;    an internal process information determination unit which determines in real time internal process information of the processing apparatus main body by measuring at least one of a pressure, temperature, mass flow, voltage, current, and plasma charge of the processing apparatus main body;    an apparatus controller unit which supplies a start signal to start a process and a stop signal to stop the process to the semiconductor device being processed within the processing apparatus main body; and    a process controller unit which receives the start signal and the internal process information has a function of periodically calculating in real time a physical characteristic of the semiconductor device using the internal process information, starts calculating the physical characteristic of the semiconductor device currently being processed at a timing when the start signal is sent from the apparatus controller unit, and sends the stop signal to the apparatus controller unit when a calculated value of the physical characteristic of the semiconductor device being processed reaches a predetermined value.    
   
   
       2 .- 3 . (canceled)  
   
   
       4 . A semiconductor manufacturing apparatus according to  claim 1 , 
 wherein the process controller unit receives external information of the processing apparatus main body together with the internal process information, and calculates the physical characteristic of the semiconductor device using the external information and the internal process information.    
   
   
       5 . A semiconductor manufacturing apparatus according to  claim 4 , 
 wherein the internal process information received by the process controller unit includes a temperature, pressure, and gas flow rate, and the external information includes an atmospheric pressure.    
   
   
       6 . A semiconductor manufacturing apparatus according to  claim 1 , 
 wherein the processing apparatus main body has a heating mechanism.    
   
   
       7 . A semiconductor manufacturing apparatus according to  claim 1 , 
 wherein the processing apparatus main body executes one of oxidation, CVD, and diffusion processes.    
   
   
       8 .- 13 . (canceled)  
   
   
       14 . A semiconductor device manufacturing method of executing a predetermined process for a substrate to be processed using a semiconductor manufacturing device comprising a processing apparatus main body which executes a process related to manufacturing of a semiconductor device, an apparatus controller unit which controls start and stop of the process in the processing apparatus main body, and a process controller unit which receives a start signal and internal process information of the processing apparatus main body and periodically calculates in real time a physical characteristic of the substrate, the method comprising: 
 while the substrate to be processed is set in the processing apparatus main body, causing the apparatus controller unit to start the predetermined process, causing the internal process information to be determined in real time by measuring at least one of a pressure, temperature, mass flow, voltage, current, and plasma charge of the processing apparatus main body, causing the process controller unit to start calculating a physical characteristic of the substrate for the current process; and    when the process controller unit judges, based on a calculation results that the physical characteristic of the substrate reaches a predetermined value, causing the apparatus controller unit to stop the current process and switch to a next process.    
   
   
       15 . (canceled)  
   
   
       16 . A semiconductor device manufacturing method according to  claim 14 , 
 wherein the process controller unit receives external information of the processing apparatus main body together with the internal process information of the processing apparatus main body, and calculates the physical characteristic of the substrate using the external information and the internal process information.    
   
   
       17 . A semiconductor device manufacturing method according to  claim 16 , 
 wherein the internal process information includes a temperature, pressure, and gas flow rate, and the external information includes an atmospheric pressure.    
   
   
       18 . A semiconductor device manufacturing method according to  claim 14 , wherein the processing apparatus main body has a heating mechanism.  
   
   
       19 . A semiconductor device manufacturing method according to  claim 14 , 
 wherein the processing apparatus main body executes one of oxidation, CVD, and diffusion processes.    
   
   
       20 . A semiconductor device manufacturing method according to  claim 14 , 
 wherein calculating the physical characteristic of the semiconductor device includes calculating at least one of an oxide film thickness, a deposited film thickness, and a doping amount.    
   
   
       21 . A semiconductor device manufacturing method according to  claim 14 , wherein the physical characteristic is: 
 a film thickness determined by calculating a film-forming reaction, or    a diffusion determined by calculating a diffusion reaction.    
   
   
       22 . A semiconductor manufacturing apparatus according to  claim 1 , 
 wherein calculating the physical characteristic of the semiconductor device includes calculating at least one of an oxide film thickness, a deposited film thickness, and a doping amount.    
   
   
       23 . A semiconductor manufacturing apparatus according to  claim 1 , wherein the physical characteristic is: 
 a film thickness determined by calculating a film-forming reaction, or    a diffusion determined by calculating a diffusion reaction.