Integrated ashing and implant annealing method using ozone

Abstract

After ion implantation, thermal ashing is performed using ozone at a pressure of between about 0.01 to about 1000 Torr at below 1000° C. to remove the resist. Since the process includes a substantial amount of ozone, the resist can be completely oxidized, thus leaving no residue or other contaminates to remain on the substrate. Using ozone allows fast resist removal with minimal residue at low temperatures.

1 . An ashing system comprising: 
 a processing chamber;    a gas distribution system configured to provide ozone into the chamber;    an outlet tube configured to flow gas out of the processing chamber;    heating elements positioned along the length of the outlet tube; and    a venturi tube coupled to the output of the outlet tube to draw gas from the processing chamber.    
   
   
       2 . The ashing system of  claim 1 , further comprising a heat source located along one portion of the processing chamber and light source located along an opposite portion of the processing chamber.