Carbon nanotube device and manufacturing method of the same

Abstract

After forming an opening, a resist film is formed on the entire surface and a resist pattern is formed by patterning the resist film. The shape of the resist pattern is such that it covers one side of the bottom of the opening. As a result, a Si substrate is exposed only in one part of the opening. Then, using the resist pattern as a mask, a catalytic layer is formed on the bottom of the opening. Then, the resist pattern is removed. Carbon nanotubes are grown on the catalytic layer. At this time, since the catalytic layer is formed on only one side of the bottom of the opening, the Van der Waals force biased towards that side works horizontally on the growing carbon nanotubes. Therefore, the carbon nanotubes are attracted towards the nearest side of the SiO 2 film and grow biased towards that side.

1 . A carbon nanotube device, comprising: 
 a catalytic layer;    a body situated around said catalytic layer; and    a carbon nanotube grown along said body from said catalytic layer, said carbon nanotube being curved at a corner of said body.    
     
     
         2 . The carbon nanotube device according to  claim 1 , wherein said body is an insulating film.  
     
     
         3 . The carbon nanotube device according to  claim 2 , wherein said insulating film is a silicon oxide film or a silicon nitride film.  
     
     
         4 . The carbon nanotube device according to  claim 2 , wherein said insulating film is a low dielectric constant film.  
     
     
         5 . The carbon nanotube device according to  claim 4 , wherein said low dielectric constant film is one kind of films selected from the group consisting of a porous silicon-based film, a fluorocarbon-based film, and a resin-based film.  
     
     
         6 . The carbon nanotube device according to  claim 2 , wherein an opening is formed in said insulating film, and said catalytic layer is formed on only one side in said opening when seen in plane view.  
     
     
         7 . The carbon nanotube device according to  claim 1 , wherein said catalytic layer contains at least one kind of metal elements selected from the group consisting of cobalt (Co), iron (Fe) and nickel (Ni).  
     
     
         8 . The carbon nanotube device according to  claim 1 , wherein said catalytic layer contains fine particles of a catalytic metal.  
     
     
         9 . The carbon nanotube device according to  claim 1 , wherein said carbon nanotube functions as a component of wiring.  
     
     
         10 . The carbon nanotube device according to  claim 1 , wherein said carbon nanotube functions as a part of a coil.  
     
     
         11 . The carbon nanotube device according to  claim 1 , wherein said carbon nanotube is connected to a lead frame.  
     
     
         12 . A manufacturing method of a carbon nanotube device, comprising the steps of: 
 forming a catalytic layer and a body extending to a position above said catalytic layer around said catalytic layer; and    growing a carbon nanotube from said catalytic layer along said body while being bent by the effect of the Van der Waals force from said body.    
     
     
         13 . The manufacturing method of the carbon nanotube device according to  claim 12 , wherein the step of forming said catalytic layer and said body comprise the steps of: 
 forming an insulating film as said body on or above a substrate;    forming an opening in said insulating film; and    forming said catalytic layer on the bottom of said opening.    
     
     
         14 . The manufacturing method of the carbon nanotube device according to  claim 13 , wherein said catalytic layer is formed on only one side in said opening in plane view, in the step of forming said catalytic layer on the bottom of said opening.  
     
     
         15 . The manufacturing method of the carbon nanotube device according to  claim 12 , wherein the step of forming said catalytic layer and said body comprise the steps of: 
 forming said catalytic layer on or above a substrate;    forming an insulating film covering said catalytic layer as said body; and    forming an opening reaching down to said catalytic layer in said insulating film.    
     
     
         16 . The manufacturing method of the carbon nanotube device according to  claim 15 , wherein said catalytic layer is exposed in a part of said opening, in the step of forming said opening.  
     
     
         17 . The manufacturing method of the carbon nanotube device according to  claim 13 , wherein a silicon oxide film or a silicon nitride film is formed as said insulating film.  
     
     
         18 . The manufacturing method of the carbon nanotube device according to  claim 13 , wherein a low dielectric constant film is formed as said insulating film.  
     
     
         19 . The manufacturing method of the carbon nanotube device according to  claim 18 , wherein one kind of films selected from the group consisting of a porous silicon-based film, a fluorocarbon-based film and a resin-based film as said low dielectric constant film.