Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof

Abstract

A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer. A p-doped semiconductor layer is formed on the active layer. A p+-doped semiconductor layer is formed on the p-doped semiconductor layer. An n+-doped semiconductor layer is formed in at least a partial upper region of the p+-doped semiconductor layer via n-dopant ion implantation. The n+-doped semiconductor layer cooperates with an underlying partial region of the p+-doped semiconductor layer to realize a reverse bias tunneling junction. Also, an upper n-doped semiconductor layer is formed on the n+-doped semiconductor layer to realize lateral current spreading. The invention can improve lighting efficiency by using the reverse bias tunneling junction and/or the lateral current spreading.

1 - 12 . (canceled)  
   
   
       13 . A nitride semiconductor Light Emitting Diode (LED) comprising: 
 an n-doped semiconductor layer formed on a substrate;    an active layer formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer;    a p-doped semiconductor layer formed on the active layer;    a p+-doped semiconductor layer formed on the p-doped semiconductor layer; and    an n+-doped semiconductor layer formed in at least a partial upper region of the p+-doped semiconductor layer via n-dopant ion implantation, the n+-doped semiconductor layer cooperating with an underlying partial region of the p+-doped semiconductor layer to realize a reverse bias tunneling junction.    
   
   
       14 . The nitride semiconductor LED according to  claim 13 , further comprising an upper n-doped semiconductor layer formed on the p+-doped semiconductor layer in order to realize lateral current spreading.  
   
   
       15 . The nitride semiconductor LED according to  claim 14 , wherein the n+-doped semiconductor layer is formed at an energy level different from that of the upper n-doped semiconductor layer.  
   
   
       16 . The nitride semiconductor LED according to  claim 14 , further comprising a p-electrode formed on the upper n-doped semiconductor layer and an n-electrode formed on the exposed partial area of the n-doped semiconductor layer.  
   
   
       17 . The nitride semiconductor LED according to  claim 13 , further comprising a p-transparent electrode formed on the n+-doped semiconductor layer and an n-electrode formed on the exposed partial area of the n-doped semiconductor layer, wherein the transparent electrode is made of at least one selected from a group consisting of Indium-Tin Oxide (ITO), Cadmium-Tin Oxide (CTO) and Titanium Tungsten Nitride (TiWN).