Method of removing oxide film on a substrate with hydrogen and fluorine radicals

Abstract

A dry cleaning process for removing native oxide at improved efficiency is disclosed. The dry cleaning process minimizes the amount of fluorine atoms absorbed on the surface of a processed substrate. Fluorine radicals are provided to the substrate together with hydrogen radicals. The substrate is processed by the reaction of the fluorine radicals and the hydrogen radicals.

1 . An apparatus for processing a substrate, comprising: 
 a processing vessel that is vacuated at a first end, said processing vessel provided with a mount on which the substrate is retained,    a remote plasma source provided at a second end of said processing vessel;    a processing gas port provided at the second end of said processing vessel;    a ultra violet light source formed between said processing gas port and the substrate, said ultra violet light source provided on said processing vessel;    a hydrogen providing line connected to said remote plasma source; and    a fluorine providing line connected to said processing gas port.    
   
   
       2 . The apparatus as claimed in  claim 1 , wherein the mount has a mechanism for rotating the substrate.  
   
   
       3 . The apparatus as claimed in  claim 1 , wherein a water vapor providing line is provided to the second end of said processing vessel.