Method and apparatus for forming multi-layered thin film by using photolysis chemical vapor deposition

Abstract

A method of forming a multi-layered thin film uses photolysis chemical vapor deposition (PCVD). In the method, a substrate for a process of forming the multi-layered thin film is prepared. At least two source gases are supplied to the substrate. Reaction lights having particular wavelengths are prepared, which are absorbed by each of the source gases, are prepared. The reaction lights having particular wavelengths are alternatingly emitted on the substrate to a form a predetermined multi-layered thin film. A photolysis chemical vapor deposition (PCVD) reactor is disclosed, having a chamber with a substrate support, a gas supply system for supplying a plurality of source gases to the substrate in the chamber, and a light supply system mounted at one side of the chamber. The light supply system selectively emits one of the plurality of reaction lights having different wavelengths on the substrate.

1 . A photolysis chemical vapor deposition (PCVD) reactor comprising: 
 a chamber having a support for placing a substrate thereon;    a gas supply system for supplying a plurality of source gases to the substrate in the chamber; and    a light supply system mounted at one side of the chamber and selectively emitting one of the plurality of reaction lights having different wavelengths on the substrate.    
   
   
       2 . The PCVD reactor of  claim 1 , wherein the light supply system comprises: 
 a light generator adapted to generate the plurality of reaction lights; and    a light emitter coupled to the light generator, the light emitter structured to select and emit to the substrate each of the plurality of reaction lights.    
   
   
       3 . The PCVD reactor of  claim 1 , wherein each of the plurality of source gases supplied from the gas supply system is excited and activated by only one of the identified wavelengths of the plurality of reaction lights.  
   
   
       4 . The PCVD reactor of  claim 3 , wherein the plurality of source gases have different deposition objects.  
   
   
       5 . The PCVD reactor of  claim 1 , further comprising a gas sprayer disposed at an upper portion of the chamber and structured to diffuse source gases supplied from the gas supply system to the surface of the substrate in a substantially vertical direction.  
   
   
       6 . The PCVD reactor of  claim 1 , wherein the reaction lights emitted from the light supply system are substantially vertically emitted to the substrate in a substantially vertical direction.  
   
   
       7 . The PCVD reactor of  claim 1 , where the reaction lights emitted from the light supply system are laser-type condensing lights.  
   
   
       8 . The PCVD reactor of  claim 1 , wherein the light supply system comprises a scanner so that the plurality of reaction lights horizontally scans the surface of the substrate in a horizontal direction.  
   
   
       9 . The PCVD reactor of  claim 1 , wherein a shaft swivels the light supply system within a predetermined angle to scan the substrate.  
   
   
       10 . The PCVD reactor of  claim 1 , further comprising a gas sprayer installed at one side of the chamber and horizontally diffusing the plurality of source gases to the surface of the substrate.  
   
   
       11 . The PCVD reactor of  claim 10 , wherein the light supply system is disposed at an upper portion of the chamber to emit the plurality of reaction lights to the surface of the substrate in a substantially vertical direction.  
   
   
       12 . The PCVD reactor of  claim 1 , wherein the light supply system is disposed at an upper portion of the chamber to emit the plurality of reaction lights to the surface of the substrate in a substantially vertical direction.  
   
   
       13 . The PCVD reactor of  claim 12 , wherein the light supply system comprises a plurality of lamps having different wavelengths.  
   
   
       14 . The PCVD reactor of  claim 13 , wherein the light supply system comprises a light source controller for lighting and alternatingly irradiating only one lamp of the plurality of lamps for a predetermined time.  
   
   
       15 . The PCVD reactor of  claim 1 , wherein the support comprises a heater configured to heat the substrate.  
   
   
       16 . The PCVD reactor of  claim 15 , wherein the heater is a lamp of a type used in a rapid thermal process.  
   
   
       17 . The PCVD reactor of  claim 16 , wherein any one of the plurality of source gases is activated if it is heated to above a predetermined temperature.  
   
   
       18 . The PCVD reactor of  claim 1 , further comprising a vacuum apparatus adapted to evacuate atmosphere from the chamber at one side of the chamber.  
   
   
       19 . A photolysis chemical vapor deposition (PCVD) reactor comprising: 
 a chamber having a substrate support;    a gas supply system configured to supply at least two source gases into the chamber; and    a light source supply system mounted at one side of the chamber and having one light source adapted to emit reaction lights on the substrate.    
   
   
       20 . The PCVD reactor of  claim 19 , wherein the source gases have different deposition objects.  
   
   
       21 . The PCVD reactor of  claim 19 , wherein the source gases have similar light absorption rates to reaction lights having the same wavelengths.  
   
   
       22 . The PCVD reactor of  claim 21 , wherein the source gases absorb the reaction lights to form a layer of a multi-layered thin film on the substrate.  
   
   
       23 . The PCVD reactor of  claim 19 , wherein the gas supply system further comprises a relay valve structured to alternatingly supply the source gases.  
   
   
       24 . The PCVD reactor of  claim 19 , further comprising a vacuum apparatus adapted to evacuate atmosphere from the chamber at one side of the chamber.