Vertical unipolar component

Abstract

A vertical unipolar component formed in a semiconductor substrate. An upper portion of the substrate includes insulated trenches filled with a vertical multiple-layer of at least two conductive elements separated by an insulating layer, the multiple-layer depth being at most equal to the thickness of the upper portion.

1 . A method for manufacturing a vertical unipolar component in a semiconductor substrate, comprising: 
 a) digging at least one vertical trench into an upper portion of the substrate;    b) coating the lateral walls and the bottom of the trench with an insulating layer;    c) depositing and etching a first conductive layer to partially fill the trench;    d) coating the remaining portion of the first conductive layer with an insulating layer; and    e) depositing and etching a second conductive layer to fill the trench.    
   
   
       2 . The method of  claim 1 , wherein the sequence of steps c) and d) is repeated.