Method for fabricating semiconductor device

Abstract

An underlying insulting film of silicon oxide, a gate insulating film of hafnium oxide, a gate electrode of polysilicon, and side walls of silicon oxide are formed above an element formation region of a semiconductor substrate. In the upper portion of the element formation region of the semiconductor substrate, source and drain areas and extension areas are formed by implantations of respective types. Thereafter, the scan speed of the semiconductor substrate and the pulse interval and the peak power of laser beam are adjusted to irradiate only the vicinity of the surface of the semiconductor substrate with laser beam for 0.1 second so that the vicinity of the surface of the semiconductor substrate has a temperature of 1150 to 1250° C. Thus, heat treatments for the gate insulating film and the source and drain areas are performed.

1 - 12 . (canceled)  
   
   
       13 . A method for forming a semiconductor device, comprising the steps of: 
 a) forming an insulating film comprising silicon on a substrate;    b) forming a high dielectric insulating film on the insulating film; and    c) irradiating a light onto the substrate having the high dielectric insulating film so as to reduce a crystal defect of the high dielectric insulating film.    
   
   
       14 . The method of  claim 13 , wherein the insulating film contains nitrogen.  
   
   
       15 . The method of  claim 13 , wherein the substrate is heated by a heating source other than the light during step c).  
   
   
       16 . The method of  claim 13 , wherein the light has a wavelength of 0.4 μm or less.  
   
   
       17 . The method of  claim 13 , wherein the high dielectric insulating film contains at least one of hafnium, zirconium, lanthanum, cerium, praseodymium, neodymium, yttrium and aluminum.  
   
   
       18 . The method of  claim 15 , wherein the substrate is heated to about 100 to 500° C. during step c).  
   
   
       19 . The method of  claim 13 , wherein a partial pressure of an oxygen gas or an oxygen compound gas is controlled during step c).  
   
   
       20 . The method of  claim 13 , wherein the atmosphere used in step c) includes a nitrogen gas or an inert gas.