Electronic device manufacture

Abstract

Methods for depositing uniform, pinhole-defect free organic polysilica coatings are provided. These methods allow for the use of these materials as spin-on cap layers in the manufacture of integrated circuits.

1 - 10 . (canceled)  
   
   
       11 . A structure comprising a first layer of an organic polysilica dielectric material and a second layer disposed on the first layer, wherein the second layer is a composition comprising one or more B-staged organic polysilica resins and one or more removable porogens, wherein the removable porogens are present in an amount sufficient to provide a pinhole-free second layer.  
   
   
       12 . A structure comprising a layer of a dielectric material and porous cap layer disposed on the dielectric material.  
   
   
       13 . The structure of  claim 12  wherein the cap layer comprises an organic polysilica material.  
   
   
       14 . The structure of  claim 12  wherein the dielectric material is porous.  
   
   
       15 . The structure of  claim 14  wherein the dielectric material comprises an organic polysilica material.  
   
   
       16 . The structure of  claim 12  wherein the dielectric material has a first etch selectivity and the porous cap layer disposed on the dielectric material has a second etch selectivity, wherein the etch selectivities have a difference of 10% or greater.  
   
   
       17 . A structure comprising a dielectric layer having a dielectric constant of ≦3 and an organic polysilica cap layer disposed on the dielectric layer, wherein the organic polysilica cap layer has a dielectric constant of ≦2.9.  
   
   
       18 . The structure if  claim 17  wherein the dielectric layer is porous.  
   
   
       19 . The structure of  claim 17  wherein the organic polysilica cap layer is porous.