Semiconductor device and method of manufacturing the same

Abstract

A plurality of semiconductor chips are bonded to an adhesive layer formed on a base plate. Then, first to third insulating films, first and second underlying metal layers, first and second re-wirings, and a solder ball are collectively formed for the plural semiconductor chips. In this case, the first and second underlying metal layers are formed by a sputtering method, and the first and second re-wirings are formed by an electroplating method. Then, a laminate structure consisting of the three insulating films, the adhesive layer, and the base plate is cut in a region positioned between the adjacent semiconductor chips.

1 . A semiconductor device comprising: 
 a semiconductor chip having an upper surface, lower surface and a peripheral surface between the upper and lower surfaces, the semiconductor chip including a plurality of connection pads formed on the upper surface thereof;    an insulating film configured to cover at least the upper surface and peripheral surfaces of the semiconductor chip, the insulating film having a plurality of through holes provided outside of the peripheral surface of the semiconductor chip, each of the through holes extending to a lower surface of the insulating film from an upper surface thereof;    a plurality of re-wirings each having a pad portion provided on the upper surface of the insulating film and electrically connected to the connection pad of the semiconductor chip, and a projecting electrode downwardly extended from the pad portion in the through hole and having a lower surface exposed from a lower side of the through hole, the pad portion and the projecting electrode of each of the re-wirings being formed of the same material; and    a plurality of solder balls each provided on the lower surface of the projecting electrode.    
     
     
         2 . The semiconductor device according to  claim 1  wherein each of the re-wirings has a second projecting electrode upwardly extended from the pad portion.  
     
     
         3 . A semiconductor device according to  claim 2  which further comprises a second insulating film surrounding the second projecting electrode.  
     
     
         4 . The semiconductor device according to  claim 1  which further comprises a plurality of second re-wirings each having a second pad portion and a second projecting electrode upwardly extended from the second pad portion.  
     
     
         5 . The semiconductor device according to  claim 1  which further comprises at least one projecting electrode not connected to the connection pad.  
     
     
         6 . A semiconductor device comprising: 
 a semiconductor chip having a plurality of connection pads on an upper surface thereof;    an insulating film configured to cover the upper surface and a peripheral surface of the semiconductor chip, first and second re-wirings each provided on the insulating film and electrically connected to the connection pad of the semiconductor chip, each of the first and second re-wirings having a pad portion outside of the peripheral surface of the semiconductor chip;    a plurality of first projecting electrodes each electrically connected to the pad portion of the first re-wiring through a hole formed in the insulating film; and    a plurality of second projecting electrodes each electrically connected to the pad portion of the second re-wiring.    
     
     
         7 . The semiconductor device according to  claim 6  wherein the second projecting electrode is provided on the pad portion of the first re-wiring.  
     
     
         8 . The semiconductor device according to  claim 6  wherein the first projecting electrode is provided on the pad portion of the second re-wiring.  
     
     
         9 . The semiconductor device according to  claim 6  which further comprises a second insulating film provided on said insulating film and surrounding the second projecting electrode.  
     
     
         10 . The semiconductor device according to  claim 6  which further comprises at least one projection electrode not connected to the connection pad.  
     
     
         11 . The semiconductor device according to  claim 6  which further comprises at least one another semiconductor device having the same construction as the semiconductor device or different construction from the semiconductor device, and overlapping the semiconductor device.  
     
     
         12 . A method for manufacturing a semiconductor device comprising: 
 fixing on a base plate, a plurality of semiconductor chips each having an upper surface, lower surface and a peripheral surface between the upper and lower surfaces, the semiconductor chip including a plurality of connection pads formed on the upper surface thereof;    forming an insulating film on said plurality of semiconductor chips and the base plate outside the semiconductor chips;    forming a plurality of through holes in portions of the insulating film outside the peripheral surfaces of the semiconductor chips, each of the through holes extending to a lower surface of the insulating film from an upper surface thereof;    forming a plurality of re-wirings each having a pad portion provided on the upper surface of the insulating film and electrically connected to the connection pad of the semiconductor chip, and a projecting electrode downwardly extended from the pad portion in the through hole and having a lower surface exposed from a lower side of the through hole, the pad portion and the projecting electrode of each of the re-wirings being formed of the same material;    removing the base plate from the semiconductor chips and the insulating film;    providing a plurality of solder balls on the lower surfaces of the projecting electrodes; and    cutting the insulating film between the adjacent semiconductor chips to obtain a plurality of semiconductor devices each including at least one semiconductor chip, a part of the insulating film located on and outside said at least one semiconductor chip, and at least one re-wiring provided with the solder ball provided on the lower surface of the projecting electrode provided outside of the peripheral surface of said at least one semiconductor chip.    
     
     
         13 . The method for manufacturing a semiconductor device according to  claim 12  which further comprises removing foreign matters from the lower surfaces of the projection electrodes after removing the base plate and before providing the plurality of solder balls.  
     
     
         14 . The method for manufacturing a semiconductor device according to  claim 12  which further comprises forming on the insulating film another insulating film covering peripheries of the projecting electrodes.  
     
     
         15 . A method for manufacturing a semiconductor device comprising: 
 fixing on a base plate, a plurality of semiconductor chips each having at least one connection pad formed on an upper surface thereof;    forming an insulating film on the plurality of semiconductor chips and the base plate outside the semiconductor chips;    forming a plurality of through holes in portions of the insulating film outside peripheral surfaces of the semiconductor chips, each of the through holes extending to a lower surface of the insulating film from an upper surface thereof;    forming a plurality of first re-wirings each having a first pad portion provided on the upper surface of the insulating film and electrically connected to the connection pad of the semiconductor chip;    forming a plurality of first projecting electrodes each downwardly extended from the pad portion in the through hole and having a lower surface exposed from a lower side of the through hole;    forming a plurality of second re-wirings on upper surface of the insulating film, each having a second pad portion located outside of the peripheral surface of the semiconductor chip;    forming a plurality of second projecting electrodes on the second pad portions of the second re-wirings; and    cutting the insulating film between the adjacent semiconductor chips to obtain a plurality of semiconductor devices each including at least one semiconductor chip, a part of the insulating film located on and outside said at least one semiconductor chip, and at least one first and second re-wirings provided outside of the peripheral surface of said at least one semiconductor chip.    
     
     
         16 . The method for manufacturing a semiconductor device according to  claim 15  wherein the first re-wirings and the first projecting electrodes are formed by the same step.  
     
     
         17 . The method for manufacturing a semiconductor device according to  claim 15  which further comprises forming another insulating film on the insulating film covering peripheral surfaces of the second projecting electrodes.