Semiconductor light emitting device and semiconductor light emitting apparatus

Abstract

A semiconductor light emitting device comprises: a substrate; a semiconductor stacked structure; a first electrode; a second electrode; and a reflective film. The substrate has a top face and a rear face electrode forming portion opposed thereto, and is translucent to light in a first wavelength band. The rear face electrode forming portion is surrounded by a rough surface. The semiconductor stacked structure is provided on the top face of the substrate and includes an active layer that emits light in the first wavelength band. The first electrode is provided on the semiconductor stacked structure, and the second electrode is provided on the rear face electrode forming portion. The reflective film is coated on at least a portion of the rough surface.

1 . A semiconductor light emitting device comprising: 
 a substrate having a top face and a rear face electrode forming portion opposed thereto, the substrate being translucent to light in a first wavelength band, the rear face electrode forming portion being surrounded by a rough surface;    a semiconductor stacked structure provided on the top face of the substrate and including an active layer that emits light in the first wavelength band;    a first electrode provided on the semiconductor stacked structure;    a second electrode provided on the rear face electrode forming portion; and    a reflective film coated on at least a portion of the rough surface.    
     
     
         2 . A semiconductor light emitting device according to  claim 1 , wherein 
 the rear face electrode forming portion is provided selectively on a bottom face opposed to the top face, and    the rough surface is provided around the rear face electrode forming portion on the bottom face.    
     
     
         3 . A semiconductor light emitting device according to  claim 1 , wherein 
 the rear face electrode forming portion has a smaller area than the top face,    the substrate has a side face that obliquely extends from the top face to the rear face electrode forming portion,    the rough surface is formed on the side face, and    the reflective film is provided on the side face selectively in a region close to the rear face electrode forming portion.    
     
     
         4 . A semiconductor light emitting device according to  claim 1 , wherein 
 the rear face electrode forming portion has a smaller area than the top face,    the substrate has a first side face extending generally vertically from the top face and a second side face that obliquely extends from the first side face to the rear face electrode forming portion,    the rough surface is formed on the first and second side faces, and    the reflective film is provided on the second side face.    
     
     
         5 . A semiconductor light emitting device comprising: 
 a substrate being translucent to light in a first wavelength band; and    a semiconductor stacked structure provided on a major surface of the substrate and including an active layer that emits light in the first wavelength band,    the substrate having a recess on a mounting surface opposed to the major surface.    
     
     
         6 . A semiconductor light emitting device according to  claim 5 , further comprising: 
 a first electrode provided on the semiconductor stacked structure; and    a second electrode provided on an inner wall of the recess.    
     
     
         7 . A semiconductor light emitting device according to  claim 6 , wherein 
 the second electrode is provided selectively near the center of the recess, and    the semiconductor light emitting device further comprises a reflective film coated on the recess around the second electrode.    
     
     
         8 . A semiconductor light emitting device according to  claim 5 , wherein the recess is shaped as a polygonal pyramid.  
     
     
         9 . A semiconductor light emitting device according to  claim 5 , wherein the recess is shaped as a circular cone.  
     
     
         10 . A semiconductor light emitting device according to  claim 5 , wherein the recess does not overlap a side face of the substrate.  
     
     
         11 . A semiconductor light emitting device comprising: 
 a substrate having first and second major surfaces and being translucent to light in a first wavelength band;    a semiconductor stacked structure provided on the first major surface of the substrate and including an active layer that emits light in the first wavelength band, at least a portion of the semiconductor stacked structure having a first rough surface formed thereon;    a dielectric film provided on the first rough surface;    a bonding pad provided on the dielectric film;    a thin line electrode portion provided on the semiconductor stacked structure and electrically connected to the semiconductor stacked structure and the bonding pad; and    an electrode provided on the second major surface of the substrate.    
     
     
         12 . A semiconductor light emitting device according to  claim 11 , wherein a second rough surface is formed on a side face of the substrate.  
     
     
         13 . A semiconductor light emitting device according to  claim 11 , wherein the substrate has an oblique side face, and the second major surface is smaller than the first major surface.  
     
     
         14 . A semiconductor light emitting apparatus comprising: 
 a packaging member;    a semiconductor light emitting device mounted on the packaging member; and    a wire connected to the semiconductor light emitting device,    the semiconductor light emitting device including: 
 a semiconductor stacked structure including an active layer that emits light; and  
 a bonding pad provided on the semiconductor stacked structure and connected to a fusion bonding portion for the wire, the bonding pad having a smaller pattern than the fusion bonding portion.  
   
     
     
         15 . A semiconductor light emitting apparatus according to  claim 14 , wherein the semiconductor light emitting device further comprises an extended electrode portion formed on the semiconductor stacked structure and connected to the bonding pad.  
     
     
         16 . A semiconductor light emitting apparatus according to  claim 15 , wherein the extended electrode portion radially extends from the bonding pad.  
     
     
         17 . A semiconductor light emitting apparatus according to  claim 14 , wherein a transparent film is provided below the fusion bonding portion where the bonding pad is not provided.  
     
     
         18 . A semiconductor light emitting apparatus according to  claim 17 , further comprising: 
 sealing resin configured to cover the semiconductor light emitting device,    the transparent film having a smaller refractive index than the sealing resin.    
     
     
         19 . A semiconductor light emitting apparatus according to  claim 15 , wherein the semiconductor light emitting device further comprises a thin line electrode portion connected to the extended electrode portion and extending to its periphery.  
     
     
         20 . A semiconductor light emitting apparatus according to  claim 14 , wherein 
 the semiconductor light emitting device further includes a substrate underlying the semiconductor stacked structure and being translucent to light emitted from the active layer, and    the packaging member includes a reflective portion that reflects light emitted from a side face of the substrate.