Process for producing an image using a first minimum bottom antireflective coating composition
Abstract
Disclosed is a process for forming an image on a substrate, comprising the steps of: (a) coating on the substrate a first layer of a radiation sensitive, antireflective composition; (b) coating a second layer of a photoresist composition onto the first layer of the antireflective composition; (c) selectively exposing the coated substrate from step (b) to actinic radiation; and (d) developing the exposed coated substrate from step (c) to form an image; wherein both the photoresist composition and the antireflective composition are exposed in step (c); both are developed in step (d) using a single developer; wherein the antireflective composition of step (a) is a first minimum bottom antireflective coating (B.A.R.C.) composition, having a solids content of up to about 8% solids, and a maximum coating thickness of the coated substrate of λ/2n wherein λ is the wavelength of the actinic radiation of step (c) and n is the refractive index of the B.A.R.C. composition.
Claims
exact text as granted — not AI-modified1 - 26 . (canceled)
27 . A radiation sensitive photoimageable antireflective composition capable of being developed in an aqueous alkaline developer comprising a polymer, where the antireflective coating composition is capable of forming an antireflective layer below a photoresist layer with a maximum coating thickness of λ/2n, where λ is wavelength of exposure and n is refractive index of the antireflective coating composition and a minimum coating thickness greater than zero.
28 . The antireflection composition of claim 1 , where the antireflective layer is coated over a photoresist layer and the antireflective layer and the photoresist layer are developed in a single step.
29 . The antireflective composition of claim 1 , where the antireflective composition is initially insoluble in the developer but rendered developer soluble after exposure to actinic radiation.
30 . The antireflective composition of claim 1 , where the antireflective composition is initially soluble in the developer but rendered developer insoluble after exposure to actinic radiation.
31 . The antireflective composition of claim 1 , further comprising a photosensitive compound.
32 . The antireflective composition of claim 1 , where the antireflective layer is capable of forming a latent image.
33 . The antireflective composition of claim 1 , where the polymer comprises a dye.
34 . The antireflective composition of claim 1 , further comprising a dye.
35 . The antireflective composition of claim 1 , where the dye is polymer-bound.
36 . The antireflective composition of claim 1 , where the polymer comprises a substituted aromatic moiety or an unsubstituted aromic moiety.
37 . The antireflective composition of claim 11 , aromatic moiety is selected from anthracene, naphthalene, and heterocyclic ring.
38 . The antireflective composition of claim 11 , where the aromatic moiety is selected from styrenes, naphthalenes, benzyl methacrylates, anthracenes, bisphenyls, anthraquinones, hydroxyl substituted aromatic dyes, and heterocyclic aromatics.
39 . The antireflective composition of claim 1 , where the polymer is derived from at least one monomer selected from N-methylmaleimide, mevaloniclactone methacrylate (MLMA), 2-methyladamantyl methacrylate (MAdMA), benzyl methacrylate, 9-anthrylmethyl methacrylate (AMMA), styrene, hydroxystyrene, acetoxystyrene, vinyl benzoate, vinyl 4-tert-butylbenzoate, ethylene glycol phenyl ether acrylate, phenoxypropyl acrylate, 2-(4-benzoyl-3-hydroxyphenoxy)ethyl acrylate, 2-hydroxy-3-phenoxypropyl acrylate, phenyl methacrylate, 9-vinylanthracene, 2-vinylnaphthalene, N-vinylphthalimide, N-(3-hydroxy)phenyl methacrylamide, N-(3-hydroxy-4-hydroxycarbonylphenylazo)phenyl methacrylamide, N-(3-hydroxyl-4-ethoxycarbonylphenylazo)phenyl methacrylamide, N-(2,4-dinitrophenylaminophenyl) maleimide, 3-(4-acetoaminophenyl)azo-4-hydroxystyrene, 3-(4-ethoxycarbonylphenyl)azo-acetoacetoxy ethyl methacrylate, 3-(4-hydroxyphenyl)azo-acetoacetoxy ethyl methacrylate, and tetrahydroammonium sulfate salt of 3-(4-sulfophenyl)azoacetoacetoxy ethyl methacrylate.
40 . The antireflective composition of claim 1 , where the antireflective composition is a crosslinkable composition.
41 . The antireflective composition of claim 1 , where the antireflective composition is a non-crosslinkable composition.
42 . The antireflective composition of claim 1 , where the solids content of the composition is up to 8% solids.
43 The antireflective composition of claim 1 , wherein the wavelength of exposure ranges from about 145 nm to 450 nm.
44 . The antireflective composition of claim 11 , wherein the wavelength is selected from 365 nm, 248 nm, 193 nm, and 157 nm.
45 . The antireflective composition of claim 1 , where the developer is an aqueous solution of tetramethylammonium hydroxide.Join the waitlist — get patent alerts
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