Reflectors, substrate processing apparatuses and methods for the same

Abstract

A substrate processing apparatus may include a processing chamber including a plasma generating unit arranged in an upper region thereof. A grid system, which may extract ions from plasma formed by the plasma generating unit and may accelerate the ions to have substantially uniform directivity. The grid system may be positioned below the plasma generating unit. A reflector may be arranged below the grid system and may include parallel reflecting plates for converting the ions accelerated from the grid system into neutral beams.

1 . A reflector comprising: 
 a plurality of reflecting plates each having a metal plate and an insulating layer stacked on the metal plate; wherein 
 the reflecting plates are parallel or substantially parallel such that the insulating layer is exposed to incident ions.  
   
   
   
       2 . The reflector according to  claim 1 , wherein the metal plate is formed of iron (Fe), Nickel (Ni), aluminum (Al), tantalum (Ta), Molybdenum (Mo), platinum (Pt), gold (Au), tungsten (W), silicon (Si), stainless or an alloy thereof.  
   
   
       3 . The reflector according to  claim 1 , wherein the insulating layer is formed of a silicon oxide layer or an oxide layer of a material forming the metal plate.  
   
   
       4 . The reflector according to  claim 1 , wherein the reflecting plates are obliquely arranged obliquely at an angle of about 1° to about 45°, inclusive, relative to the incident ions.  
   
   
       5 . The reflector according to  claim 1 , wherein the reflecting plates are arranged obliquely at an angle of about 3° to about 15°, inclusive, relative to the incident ions.  
   
   
       6 . The reflector according to  claim 1 , wherein the incident ions are incident on and reflected from the insulating layers of the reflecting plates without substantial collision, and the incident ions are converted into neutral beams by colliding with metal plates facing the insulating layers of the reflecting plates.  
   
   
       7 . The reflector according to  claim 6 , wherein the neutral beams have the same or substantially the same directivity as the ions incident on the insulating layers of the reflecting plates.  
   
   
       8 . A substrate processing apparatus comprising: 
 a processing chamber;    a plasma generating unit positioned in an upper region of the processing chamber;    a grid system provided below the plasma generating unit, for extracting ions from plasma generated by the plasma generating unit and accelerating the ions to have substantially uniform directivity;    a reflector as claimed in  claim 1  arranged below the grid system; and    a substrate support provided in a lower region of the processing chamber, for fixing a substrate on which the neutral beams are incident.    
   
   
       9 . The apparatus according to  claim 8 , wherein the reflecting plates are arranged obliquely so that the insulating layers of the reflecting plates face the grid system.  
   
   
       10 . The apparatus according to  claim 8 , wherein the reflecting plates are arranged obliquely at an angle of about 1° to about 45°, inclusive, relative to the ions accelerated by the grid system.  
   
   
       11 . The apparatus according to  claim 8 , wherein the reflecting plates are arranged obliquely at an angle of about 3° to about 15°, inclusive, relative to the ions accelerated by the grid system.  
   
   
       12 . The apparatus according to  claim 8 , wherein the metal plate is formed of iron (Fe), Nickel (Ni), aluminum (Al), tantalum (Ta), Molybdenum (Mo), platinum (Pt), gold (Au), tungsten (W), silicon (Si), stainless or an alloy thereof.  
   
   
       13 . The apparatus according to  claim 8 , wherein the insulating layer is formed of a silicon oxide layer or an oxide layer of a material forming the metal plate.  
   
   
       14 . The apparatus according to  claim 8 , further including a shutter system positioned between the substrate and the reflector.  
   
   
       15 . A substrate processing method comprising: 
 forming first plasma;    extracting preliminary ions from the first plasma and accelerating the ions to have uniform or substantially uniform directivity using a grid system;    irradiating the preliminary ions at the reflector of  claim 1;     colliding the preliminary ions with the reflecting plates so that a charge build-up occurs on the insulating layers, the polarity of the charge build-up being the same as a polarity of the preliminary ions;    forming a second plasma;    extracting and accelerating process ions from the second plasma using the grid system;    emitting the process ions at the reflector;    reflecting the process ions incident on the reflecting plates away from the insulating layers of the reflecting plates without substantial collision;    colliding the process ions reflected away from the insulating layers with the metal plates to convert the process ions into neutral beams;    reflecting the neutral beams to have substantially the same directivity; and    irradiating the neutral beams onto a substrate to process the substrate.    
   
   
       16 . The method of  claim 15 , wherein the reflecting plates are arranged obliquely at an angle of about 1° to about 45°, inclusive, relative to the ions accelerated by the grid system.  
   
   
       17 . The method according to  claim 15 , wherein the reflecting plates are arranged obliquely at an angle of about 3° to about 15°, inclusive, relative to the ions accelerated by the grid system.  
   
   
       18 . The method according to  claim 15 , wherein the metal plate is formed of iron (Fe), Nickel (Ni), aluminum (Al), tantalum (Ta), Molybdenum (Mo), platinum (Pt), gold (Au), tungsten (W), silicon (Si), stainless or an alloy thereof.  
   
   
       19 . The method according to  claim 15 , wherein the insulating layer is formed of a silicon oxide layer or an oxide layer of a material forming the metal plate.  
   
   
       20 . The method according to  claim 15 , wherein, while the charge build-up occurs on the insulating layers of the metal plates, the substrate is protected from the preliminary ions by a shutter system provided between the substrate and the reflector.