Methods for planarization of Group VIII metal-containing surfaces using a fixed abrasive article

Abstract

A planarization method includes providing a Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a fixed abrasive article in the presence of a planarization composition, wherein the fixed abrasive article comprises a plurality of abrasive particles having a hardness of no greater than about 6.5 Mohs dispersed within a binder adhered to at least one surface of a backing material.

1 . A planarization method comprising: 
 positioning a Group VIII metal-containing surface of a substrate to interface with a fixed abrasive article, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;    supplying a planarization composition in proximity to the interface; and    planarizing the substrate surface with the fixed abrasive article;    wherein the fixed abrasive article comprises a plurality of abrasive particles having a hardness of no greater than about 6.5 Mohs dispersed within a binder adhered to at least one surface of a backing material.    
   
   
       2 . The method of  claim 1  wherein the Group VIII metal-containing surface of the substrate has a nonplanar topography.  
   
   
       3 . The method of  claim 1  wherein the Group VIII metal-containing surface of the substrate comprises a Group VIII metal in elemental form or an alloy thereof.  
   
   
       4 . The method of  claim 3  wherein the Group VIII metal-containing surface comprises elemental platinum.  
   
   
       5 . The method of  claim 3  wherein the Group VIII metal-containing surface comprises a platinum alloy.  
   
   
       6 . The method of  claim 1  wherein the Group VIII metal is present in an amount of about 10 atomic percent or more.  
   
   
       7 . The method of  claim 6  wherein the Group VIII metal is present in an amount of about 20 atomic percent or more.  
   
   
       8 . The method of  claim 7  wherein the Group VIII metal is present in an amount of about 50 atomic percent or more.  
   
   
       9 . The method of  claim 1  wherein the substrate is a wafer.  
   
   
       10 . The method of  claim 1  wherein the plurality of abrasive particles comprise CeO 2 , Y 2 O 3 , Fe 2 O 3 , or mixtures thereof.  
   
   
       11 . The method of  claim 10  wherein a majority of the plurality of abrasive particles are CeO 2  abrasive particles.  
   
   
       12 . The method of  claim 1  wherein the planarization composition comprises an oxidizing agent, a complexing agent, or mixtures thereof.  
   
   
       13 . The method of  claim 1  wherein the Group VIII metal-containing surface is removed relative to a dielectric layer at a selectivity ratio of at least about 10:1.  
   
   
       14 . A planarization method comprising: 
 providing a semiconductor substrate or substrate assembly including at least one region of a platinum-containing surface;    providing a fixed abrasive article;    providing a planarization composition at an interface between the at least one region of platinum-containing surface and the fixed abrasive article; and    planarizing the at least one region of platinum-containing surface with the fixed abrasive article;    wherein the fixed abrasive article comprises a plurality of abrasive particles having a hardness of no greater than about 6.5 Mohs dispersed within a binder adhered to at least one surface of a backing material.    
   
   
       15 . The method of  claim 14  wherein the platinum-containing surface has a nonplanar topography.  
   
   
       16 . The method of  claim 14  wherein the platinum is present in an amount of about 10 atomic percent or more.  
   
   
       17 . The method of  claim 14  wherein the platinum-containing surface comprises elemental platinum.  
   
   
       18 . The method of  claim 14  wherein the platinum-containing surface comprises a platinum alloy.  
   
   
       19 . The method of  claim 14  wherein the substrate assembly is a wafer.  
   
   
       20 . The method of  claim 14  wherein the plurality of abrasive particles comprise CeO 2 , Y 2 O 3 , Fe 2 O 3 , or mixtures thereof.  
   
   
       21 . The method of  claim 20  wherein a majority of the plurality of abrasive particles are CeO 2  abrasive particles.  
   
   
       22 . The method of  claim 14  wherein the planarization composition comprises an oxidizing agent, a complexing agent, or mixtures thereof.  
   
   
       23 . The method of  claim 14  wherein the Group VIII metal-containing surface is removed relative to an oxide layer at a selectivity ratio of at least about 10:1.  
   
   
       24 . A planarization method comprising: 
 providing a semiconductor substrate or substrate assembly including at least one region of a platinum-containing surface having a nonplanar topography;    providing a fixed abrasive article;    providing a planarization composition at an interface between the at least one region of platinum-containing surface and the fixed abrasive article; and    planarizing the at least one region of platinum-containing surface with the fixed abrasive article;    wherein the fixed abrasive article comprises a plurality of abrasive particles selected from the group of CeO 2 , Y 2 O 3 , Fe 2 O 3 , and combinations thereof.    
   
   
       25 . A planarization method comprising: 
 providing a semiconductor substrate or substrate assembly including at least one region of a platinum-containing surface having a nonplanar topography;    providing a fixed abrasive article;    providing a planarization composition at an interface between the at least one region of platinum-containing surface and the fixed abrasive article; and    planarizing the at least one region of platinum-containing surface with the fixed abrasive article;    wherein the fixed abrasive article comprises a plurality of CeO 2  abrasive particles.    
   
   
       26 . A planarization method comprising: 
 providing a semiconductor substrate or substrate assembly including at least one region of a platinum-containing surface having a nonplanar topography;    providing a fixed abrasive article;    providing a planarization composition comprising an oxidizing agent, a complexing agent, or a combination thereof at an interface between the at least one region of platinum-containing surface and the fixed abrasive article; and    planarizing the at least one region of platinum-containing surface with the fixed abrasive article;    wherein the fixed abrasive article comprises a plurality of CeO 2  abrasive particles.    
   
   
       27 . A planarization method for use in forming a capacitor or barrier layer: 
 providing a wafer having a patterned dielectric layer formed thereon and a Group VIII metal-containing layer formed over the patterned dielectric layer, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;    positioning a first portion of a fixed abrasive article for contact with the platinum-containing layer;    providing a planarization composition in proximity to the contact between the fixed abrasive and the Group VIII metal-containing layer; and    planarizing the platinum-containing layer with the fixed abrasive article;    wherein the fixed abrasive article comprises a plurality of abrasive particles having a hardness of no greater than about 6.5 Mohs dispersed within a binder adhered to at least one surface of a backing material.    
   
   
       28 . The method of  claim 27  wherein the Group VIII metal-containing surface of the substrate comprises a Group VIII metal in elemental form or an alloy thereof.  
   
   
       29 . The method of  claim 28  wherein the Group VIII metal-containing surface comprises elemental platinum.  
   
   
       30 . The method of  claim 27  wherein the Group VIII metal-containing surface comprises a platinum alloy.  
   
   
       31 . The method of  claim 27  wherein the Group VIII metal is present in an amount of about 10 atomic percent or more.  
   
   
       32 . The method of  claim 31  wherein the Group VIII metal is present in an amount of about 20 atomic percent or more.  
   
   
       33 . The method of  claim 32  wherein the Group VIII metal is present in an amount of about 50 atomic percent or more.  
   
   
       34 . The method of  claim 27  wherein the substrate is a wafer.  
   
   
       35 . The method of  claim 27  wherein the plurality of abrasive particles comprise CeO 2 , Y 2 O 3 , Fe 2 O 3 , or mixtures thereof.  
   
   
       36 . The method of  claim 35  wherein a majority of the plurality of abrasive particles are CeO 2  abrasive particles.  
   
   
       37 . The method of  claim 27  wherein the planarization composition comprises an oxidizing agent, a complexing agent, or mixtures thereof.  
   
   
       38 . The method of  claim 27  wherein the Group VIII metal-containing surface is removed relative to an oxide layer at a selectivity ratio of at least about 10:1.