US2006186524A1PendingUtilityA1

Semiconductor device

49
Assignee: FUJITSU LTDPriority: Feb 18, 2005Filed: May 25, 2005Published: Aug 24, 2006
Est. expiryFeb 18, 2025(expired)· nominal 20-yr term from priority
Inventors:Yoshitaka AibaTetsuya FujisawaYoshiyuki Yoneda
H10W 90/754H10W 90/734H10W 90/732H10W 90/724H10W 74/117H10W 74/00H10W 72/9415H10W 72/9223H10W 72/952H10W 72/923H10W 72/922H10W 72/884H10W 72/877H10W 70/656H10W 70/655H10W 90/701H10W 90/00H10W 70/635H10W 70/611H10W 44/20H10W 42/20H10W 72/926H10W 72/9445H10W 72/936H10W 72/29H10W 70/60H10W 72/242H10W 20/42H10W 72/20H10W 72/90
49
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Claims

Abstract

A semiconductor device is disclosed that includes a support substrate, a first semiconductor element that is mounted on one side of the support substrate, a second semiconductor element including a high frequency electrode that is mounted on the one side of the support substrate, a via hole that is provided at the support substrate in relation to the high frequency electrode, and an external connection electrode that is provided on the other side of the support substrate in relation to the via hole.

Claims

exact text as granted — not AI-modified
1 . A semiconductor device comprising: 
 a support substrate;    a first semiconductor element that is mounted on one side of the support substrate;    a second semiconductor element including a high frequency electrode that is mounted on said one side of the support substrate;    a via hole that is provided at the support substrate in relation to the high frequency electrode; and    an external connection electrode that is provided on the other side of the support substrate in relation to the via hole.    
   
   
       2 . The semiconductor device as claimed in  claim 1 , wherein 
 the second semiconductor element is face-down mounted on said one side of the support substrate.    
   
   
       3 . The semiconductor device as claimed in  claim 1 , wherein 
 a center axis of the high frequency electrode is positioned within a periphery of the via hole.    
   
   
       4 . The semiconductor device as claimed in  claim 1 , wherein 
 the first semiconductor element is stacked on the second semiconductor element.    
   
   
       5 . The semiconductor device as claimed in  claim 1 , wherein 
 the second semiconductor element includes a shield member that is set to ground potential.    
   
   
       6 . The semiconductor device as claimed in  claim 1 , wherein 
 the second semiconductor element includes rewiring that forms a passive element.    
   
   
       7 . The semiconductor device as claimed in  claim 1 , wherein 
 the second semiconductor element includes a pair of re-wiring structures that include portions that are parallel to each other.    
   
   
       8 . The semiconductor device as claimed in  claim 1 , wherein 
 the second semiconductor element includes a set of re-wiring structures that have substantially equivalent wiring lengths.

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