Methods for planarization of group VIII metal-containing surfaces using oxidizing gases

Abstract

A planarization method includes providing a second and/or third Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a polishing surface in the presence of a planarization composition that includes an oxidizing gas.

1 . A planarization method comprising: 
 positioning a Group VIII metal-containing surface of a substrate to interface with a polishing surface, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;    supplying a planarization composition in proximity to the interface; and    planarizing the Group VIII metal-containing surface;    wherein the planarization composition comprises an oxidizing gas having a standard reduction potential of at least about 1.4 versus a standard hydrogen electrode at 25° C.    
   
   
       2 . The method of  claim 1  wherein the Group VIII metal-containing surface of the substrate comprises a Group VIII metal in elemental form or an alloy thereof.  
   
   
       3 . The method of  claim 2  wherein the Group VIII metal-containing surface comprises elemental platinum, rhodium, iridium, ruthenium, or a combination thereof.  
   
   
       4 . The method of  claim 3  wherein the Group VIII metal-containing surface comprises elemental platinum.  
   
   
       5 . The method of  claim 1  wherein the Group VIII metal is present in an amount of about 10 atomic percent or more.  
   
   
       6 . The method of  claim 1  wherein the substrate is a semiconductor substrate or substrate assembly.  
   
   
       7 . The method of  claim 1  wherein the polishing surface comprises a polishing pad and the planarization composition comprises a plurality of abrasive particles.  
   
   
       8 . The method of  claim 1  wherein the planarization composition comprises a plurality of abrasive particles having a hardness of no greater than about 9 Mohs.  
   
   
       9 . The method of  claim 8  wherein the plurality of abrasive particles comprise CeO 2 , Al 2 O 3 , SiO 2 , and mixtures thereof.  
   
   
       10 . The method of  claim 1  which is carried out in one step.  
   
   
       11 . The method of  claim 1  wherein the oxidizing gas is selected from the group consisting of oxygen, ozone, air, chlorine, nitrous oxide, nitric oxide, sulfur trioxide, an interhalogen, and combinations thereof.  
   
   
       12 . The method of  claim 11  wherein the oxidizing gas is selected from the group consisting of oxygen, air, and combinations thereof.  
   
   
       13 . The method of  claim 12  wherein the oxidizing gas is oxygen.  
   
   
       14 . The method of  claim 1  wherein planarizing is carried out using a fixed abrasive article.  
   
   
       15 . A planarization method comprising: 
 positioning a Group VIII metal-containing surface of a substrate to interface with a polishing surface, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;    supplying a planarization composition in proximity to the interface; and    planarizing the Group VIII metal-containing surface;    wherein the planarization composition comprises an oxidizing gas selected from the group consisting of oxygen, air, chlorine, nitrous oxide, nitric oxide, sulfur trioxide, an interhalogen, and combinations thereof.    
   
   
       16 . A planarization method comprising: 
 positioning a Group VIII metal-containing surface of a substrate to interface with a polishing surface, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;    supplying a planarization composition in proximity to the interface; and    planarizing the Group VIII metal-containing surface;    wherein the planarization composition comprises an oxidizing gas having a standard reduction potential of at least about 1.4 versus a standard hydrogen electrode at 25° C., wherein the oxidizing gas is present in the composition in an amount of no greater than about 10% by weight.    
   
   
       17 . A planarization method comprising: 
 providing a semiconductor substrate or substrate assembly including at least one region of a platinum-containing surface;    providing a polishing surface;    providing a planarization composition at an interface between the at least one region of platinum-containing surface and the polishing surface; and    planarizing the at least one region of platinum-containing surface;    wherein the planarization composition comprises an oxidizing gas having a standard reduction potential of at least about 1.4 versus a standard hydrogen electrode at 25° C.    
   
   
       18 . The method of  claim 17  wherein the platinum is present in an amount of about 10 atomic percent or more.  
   
   
       19 . The method of  claim 17  wherein the platinum-containing surface comprises elemental platinum.  
   
   
       20 . The method of  claim 17  wherein the planarization composition comprises a plurality of abrasive particles selected from the group consisting of CeO 2 , Al 2 O 3 , SiO 2 , and mixtures thereof.  
   
   
       21 . The method of  claim 17  wherein the platinum-containing surface comprises a platinum alloy.  
   
   
       22 . The method of  claim 17  wherein the semiconductor substrate or substrate assembly is a silicon wafer.  
   
   
       23 . The method of  claim 17  wherein the oxidizing gas is selected from the group consisting of oxygen, nitrous oxide, air, or combinations thereof.  
   
   
       24 . The method of  claim 23  wherein the oxidizing gas is selected from the group consisting of oxygen, air, or combinations thereof.  
   
   
       25 . The method of  claim 24  wherein the oxidizing gas is selected from the group consisting of oxygen.  
   
   
       26 . A planarization method for use in forming a capacitor or barrier layer: 
 providing a wafer having a patterned dielectric layer formed thereon and a Group VIII metal-containing layer formed over the patterned dielectric layer, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;    positioning a first portion of a polishing surface for contact with the Group VIII metal-containing layer;    providing a planarization composition in proximity to the contact between the polishing surface and the Group VIII metal-containing layer; and    planarizing the Group VIII metal-containing layer;    wherein the planarization composition comprises an oxidizing gas having a standard reduction potential of at least about 1.4 versus a standard hydrogen electrode at 25° C.