Forming a cap above a metal layer

Abstract

In one embodiment, the present invention includes an apparatus having a metal layer with a pad disposed above a substrate; and a cap disposed above the metal layer having a first portion to provide for contact with a probe and a second portion to provide a bonding surface, and the cap is electrically coupled to the pad.

1 . An apparatus comprising: 
 a metal layer disposed above a substrate, the metal layer having at least one pad; and    a cap layer disposed above the metal layer, the cap layer having a first portion to provide for contact with a probe and a second portion to provide a bonding surface, the cap layer electrically coupled to the at least one pad.    
     
     
         2 . The apparatus of  claim 1 , further comprising a passivation layer disposed between the metal layer and the cap layer.  
     
     
         3 . The apparatus of  claim 2 , further comprising an opening in the passivation layer so that a portion of the cap layer contacts the at least one pad.  
     
     
         4 . The apparatus of  claim 1 , wherein the first portion and the second portion are laterally removed from the at least one pad.  
     
     
         5 . The apparatus of  claim 1 , wherein the cap layer comprises titanium aluminum.  
     
     
         6 . The apparatus of  claim 2  wherein the metal layer comprises a terminal metal layer.  
     
     
         7 . The apparatus of  claim 6 , wherein the terminal metal layer comprises a plurality of subpads.  
     
     
         8 . The apparatus of  claim 7 , wherein the plurality of subpads comprises a first subpad coupled to a first circuit and a second subpad coupled to a second circuit.  
     
     
         9 . The apparatus of  claim 8 , wherein the cap layer is electrically coupled to the first subpad and the second subpad so that a test probe coupled to the first portion of the cap layer can selectively test the first circuit or the second circuit.  
     
     
         10 . An apparatus comprising: 
 a metal layer disposed above a substrate, the metal layer having a first area comprising a pad; and    a cap layer disposed above the metal layer and having a portion in contact with a portion of the metal layer, the cap layer having a second area comprising a contact surface, the second area laterally displaced from the first area.    
     
     
         11 . The apparatus of  claim 10 , further comprising a passivation layer disposed between the metal layer and the cap layer.  
     
     
         12 . The apparatus of  claim 11 , further comprising an opening in the passivation layer so that the portion of the cap layer contacts the portion of the metal layer.  
     
     
         13 . The apparatus of  claim 10 , wherein the second area is substantially larger than the first area.  
     
     
         14 . The apparatus of  claim 10 , further comprising at least one lead coupled to the contact surface.  
     
     
         15 . An apparatus comprising: 
 a metal layer disposed above a substrate, the metal layer having at least one pad; and    a cap disposed above the metal layer, the cap having a probe pad and bond pad, the probe pad and the bond pad laterally displaced from the at least one pad, the cap electrically coupled to the at least one pad.    
     
     
         16 . The apparatus of  claim 15 , further comprising a passivation layer disposed between the metal layer and the cap.  
     
     
         17 . The apparatus of  claim 15 , further comprising a passivation layer disposed above the cap.  
     
     
         18 . The apparatus of  claim 15 , wherein the cap comprises titanium aluminum.  
     
     
         19 . The apparatus of  claim 15 , wherein the probe pad is located at an interior portion of a semiconductor die and the bond pad is located at a peripheral portion of the semiconductor die.  
     
     
         20 . The apparatus of  claim 15 , further comprising a lead coupled to the probe pad.