Semiconductor device

Abstract

An electrostatic discharge protected transistor of the present invention includes transistors in an active region composed of a p-type semiconductor substrate and surrounded by element isolation regions. On the active region composed of the p-type semiconductor substrate, an on-source silicide film and an on-drain silicide film are provided. The on-drain silicide film is not provided in a portion located on a boundary of each transistor and divided to correspond to the respective transistors. As a result, regions between respective pairs of the transistors have high resistances, and it is, therefore, possible to prevent a current from flowing between the different transistors and prevent local current concentration. It is thereby possible to allow the electrostatic discharge protected transistor to make most use of an electrostatic destruction protection capability per unit area without increasing an area of the transistor.

1 . A semiconductor device, comprising: 
 a semiconductor substrate which includes an active region;    an element isolation region provided in a region surrounding sides of said active region of said semiconductor substrate;    a gate insulating film provided on said active region;    a gate electrode provided on said gate insulating film;    a source region and a drain region which are provided in regions located below sides of said gate electrode in said active region, respectively;    an on-source silicide film provided on said source region;    an on-drain silicide film provided on said drain region;    a plurality of source contacts which are provided over said source region with said on-source silicide film interposed therebetween, and which are aligned in a gate width direction; and    a plurality of drain contacts which are provided over said drain region with said on-drain silicide film interposed therebetween, and which are aligned in the gate width direction,    wherein said on-drain silicide film is provided to be divided into a plurality of on-drain silicide films and the resultant on-drain silicide films are isolated from one another in at least one region out of regions located between respective adjacent pairs of the drain contacts among said plurality of drain contacts.    
   
   
       2 . The semiconductor device of  claim 1 , 
 wherein said on-drain silicide film is provided to be divided into the plurality of on-drain silicide films and the resultant on-drain silicide films are isolated to correspond to said drain contacts, respectively.    
   
   
       3 . The semiconductor device of  claim 1 , 
 wherein said on-source silicide film is provided on an entire surface of said source region.    
   
   
       4 . The semiconductor device of  claim 1 , 
 wherein said on-source silicide film is provided to be divided into a plurality of on-source silicide films and the resultant on-source silicide films are isolated from one another in at least one region out of regions located between respective adjacent pairs of the source contacts among said plurality of source contacts.    
   
   
       5 . The semiconductor device of  claim 1 , 
 wherein a protection film is provided on said drain region in at least one region out of regions put between the respective adjacent pairs of the drain contacts among said plurality of drain contacts, thereby providing said on-drain silicide films to be isolated from one another.    
   
   
       6 . The semiconductor device of  claim 1 , 
 wherein said gate electrode is composed of a polysilicon film, and    an on-gate silicide film is formed on said gate electrode.    
   
   
       7 - 15 . (canceled)