TFT array panel and fabricating method thereof

Abstract

Disclosed is display part such as a TFT array panel comprising an aluminum layer, and a molybdenum layer formed on the aluminum layer. The thickness of the molybdenum layer may be about 10% to about 40% the thickness of the aluminum layer. As a result, a top surface of the aluminum layer may have a width about equal to a bottom surface of the molybdenum layer. Accordingly, it is an aspect of the present invention to provide a TFT array panel comprising an aluminum wiring on which aluminum protrusion is reduced or eliminated.

1 . A TFT array panel comprising: 
 an aluminum layer having a thickness; and    a top molybdenum layer formed on the aluminum layer, the top molybdenum thickness having a thickness in the range from about 10% to about 40% the thickness of the aluminum layer.    
   
   
       2 . The TFT array panel according to  claim 1 , wherein the aluminum layer and the top molybdenum layer are in direct contact with each other.  
   
   
       3 . The TFT array panel according to  claim 1 , wherein the thickness of the top molybdenum layer is in the range of about 20% to 27% of the thickness of the aluminum layer.  
   
   
       4 . The TFT array panel according to  claim 1 , wherein the top molybdenum layer comprises at least one selected from a group consisting of tungsten (W), zirconium (Zr), tantalum (Ta), niobium (Nb), and nitrogen (N).  
   
   
       5 . The TFT array panel according to  claim 1 , further comprising a bottom molybdenum layer formed adjacent a bottom of the aluminum layer.  
   
   
       6 . A TFT array panel comprising: 
 a gate wiring; and    a data wiring, wherein at least one of the gate and data wiring comprises an aluminum layer having an aluminum layer thickness and a molybdenum layer having a molybdenum thickness about 10% to 40% of the aluminum layer thickness, and wherein the aluminum layer and the molybdenum layer are formed in sequence.    
   
   
       7 . A method of fabricating a TFT array panel, comprising: 
 depositing an aluminum layer having a first thickness on a substrate;    depositing a molybdenum layer on the aluminum layer, the molybdenum layer having a second thicknes about 10% to about 40% the first thickness; and    forming a wiring by patterning the aluminum layer and the molybdenum layer.    
   
   
       8 . The method according to  claim 7 , further comprising forming an insulating layer, a semiconductor layer and an ohmic contact layer in sequence on the wiring.  
   
   
       9 . The method according to  claim 8 , wherein forming an insulting layer, a semiconductor layer, and an ohmic contact layer in sequence comprises forming at least one of the insulating layer, the semiconductor layer, and the ohmic contact layer using a plasma-enhanced chemical vapor deposition process.  
   
   
       10 . A liquid crystal display comprising: 
 a first substrate comprising a gate wiring and a data wiring, at least one of the gate wiring and the data wiring comprising an aluminum layer having a first thickness and a molybdenum layer having a second thickness in the range from about 10% to about 40% of the first thickness, the aluminum layer and the molybdenum layer formed in sequence;    a second substrate facing the first substrate; and    a liquid crystal layer placed between the first substrate and the second substrate.    
   
   
       11 . The liquid crystal display of  claim 10 , wherein the aluminum layer and the molybdenum layer each extend along a first direction, and each comprise a top surface, a bottom surface, a first lateral side surface having a first angle with respect to the bottom surface of the aluminum layer, and a second lateral side surface having a second angle with respect to the bottom surface of the aluminum layer, and wherein a width of the bottom surface of the molybdenum layer perpendicular to the first direction is substantially the same as a width of the top surface of the aluminum layer perpendicular to the first direction.  
   
   
       12 . The liquid crystal display of  claim 10 , wherein the first angle of the aluminum layer is substantially the same as the first angle of the molybdenum layer.  
   
   
       13 . A display part, comprising: 
 a substrate;    a wiring on the substrate, the wiring configured to transmit one or more electrical signals in the display part, wherein the wiring comprises:    an aluminum layer;    a molybdenum layer adjacent the aluminum layer, wherein the aluminum layer and the molybdenum layer each extend along a first direction, and each comprise a top surface, a bottom surface, a first lateral side surface having a first angle with respect to the bottom surface of the aluminum layer, and a second lateral side surface having a second angle with respect to the bottom surface of the aluminum layer, and wherein a width of the bottom surface of the molybdenum layer perpendicular to the first direction is substantially the same as a width of the top surface of the aluminum layer perpendicular to the first direction.    
   
   
       14 . The part of  claim 13 , wherein the first angle of the aluminum layer is substantially the same as the first angle of the molybdenum layer.  
   
   
       15 . The part of  claim 14 , wherein the first angle is different than ninety degrees.  
   
   
       16 . The part of  claim 13 , wherein the display part comprises at least one of a liquid crystal display part and an organic light emitting diode display part.  
   
   
       17 . The part of  claim 13 , further comprising a bottom layer extending along the first direction, the bottom layer having a top surface adjacent the bottom surface of the aluminum layer.  
   
   
       18 . The part of  claim 13 , wherein the molybdenum layer further comprises at least one of tungsten (W), zirconium (Zr), tantalum (Ta), niobium (Nb), and nitrogen (N).  
   
   
       19 . The part of  claim 13 , wherein the aluminum layer has a first thickness, and wherein the molybdenum layer has a thickness between about 10% and about 40% of the first thickness.  
   
   
       20 . The part of  claim 19 , wherein the thickness of the molybdenum layer is selected to substantially eliminate aluminum hillock formation.