System and device including a barrier layer

Abstract

Systems and devices are disclosed utilizing a silicon-containing barrier layer. A semiconductor device is disclosed and includes a substrate, a gate oxide, a silicon-containing barrier layer and a gate electrode. The gate oxide is formed over the substrate. The silicon-containing barrier layer is formed over the gate oxide by causing silicon atoms of a precursor layer react with a reactive agent. The gate electrode is formed over the silicon-containing barrier layer.

1 . A capacitor device comprising: 
 an electrode formed over a substrate;    a barrier layer comprised of a silicon-containing material containing no metal formed over at least a portion of said electrode, said silicon-containing material having been formed from a precursor layer that has been processed using rapid thermal nitridation with a nitridizing reactant; and    a dielectric layer formed over said barrier layer.    
   
   
       2 . A capacitor device as claimed in  claim 1  wherein said nitridizing reactant is selected from the group consisting of NH 3 , N 2  and NO.  
   
   
       3 . A capacitor device as claimed in  claim 1  wherein said silicon-containing material comprises a nitride.  
   
   
       4 . A semiconductor device having a precursor layer containing no metal comprising: 
 a silicon substrate including at least one semiconductor layer; and    a precursor layer comprising a metal-free silicon-containing material from a silane source formed over at least a portion of said silicon substrate.    
   
   
       5 . A semiconductor device as claimed in  claim 4  wherein said silane source is selected from the group consisting of diethylaminotrimethylsilane and dimethylaminotrimethylsilane.  
   
   
       6 . A capacitor device comprising: 
 an electrode formed over a substrate; and    a precursor layer comprising a metal-free silicon-containing material formed over the electrode.    
   
   
       7 . A capacitor device comprising: 
 an electrode formed over a substrate; and    a precursor layer comprising a metal-free silicon-containing material from a silazane source formed over the electrode.    
   
   
       8 . A capacitor device as claimed in  claim 7  wherein said silazane source is selected from the group consisting of hexamethyldisilazane, tetramethyldisilazane, octamethylcyclotetrasilazine, and hexamethylcyclotrisilazine.  
   
   
       9 . A capacitor device comprising: 
 an electrode formed over a substrate; and    a precursor layer comprising a metal-free silicon-containing material from a silane source formed over the electrode.    
   
   
       10 . A capacitor device as claimed in  claim 1  wherein said silane source is selected from the group consisting of diethylaminotrimethylsilane and dimethylaminotrimethylsilane.